ISSN:
1432-0630
Keywords:
81.15.Gh
;
52.90.+z
;
68.55.+b
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Thin films of hafnium carbide have been deposited by plasma-enhanced chemical vapor deposition using bis(η-cyclopentadienyl)dimethylhafnium, Cp2 Hf(CH3)2, as precursor in 13.56 MHz planar reactor. The influence of the various experimental parameters on film properties has been studied. The carbon content ranged from 11 to 40 weight % and increased with the deposition rate. The film hardness varied between 1300 and 2000 HK. Depending on the carbon content and power delivered in the discharge, the film resistivity and film density ranged from 271 to 105 μΩ·cm and from 3.4 to 10.4 g/cm3, respectively, and the film composition varied from HfC to hafnium containing a-C: H films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538404
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