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  • 11
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101264
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  • 12
    Electronic Resource
    Electronic Resource
    Interfacial defect creation by interstitial lithium doping of amorphous hydrogenated silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 505-507 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study interstitial doping in amorphous hydrogenated silicon (a-Si:H) by indiffusion of lithium at 230 °C using secondary ion mass spectrometry, photothermal deflection spectroscopy (PDS), and electron spin resonance. Lithium is distributed nonuniformly in the films with peak concentrations within 300 nm of either interface. Lithium doping introduces up to 1018 paramagnetic defects per cc in a-Si:H (g=2.0061, ΔHp.p. =5.2 G), equal to the concentration of deep defects created as measured by PDS. The nature of these defects is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99881
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  • 13
    Electronic Resource
    Electronic Resource
    Image capture array with an organic light sensor (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 4193-4195 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area image capture device using an organic sensor is reported. The 512×512 pixel array, with 100×100 micrometer pixel size, combines amorphous silicon matrix addressing with a continuous organic sensor. The bilayer sensor comprises a tetraphenyldiamine hole transport layer on top of a benzimidazole perylene generator layer. This combination provides high sensitivity across the visible with low dark current. We present imaging properties and in particular show that the lateral charge transport between pixels is small, and that the effective fill factor is ∼90%. X-ray imaging with a phosphor converter is demonstrated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380733
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  • 14
    Electronic Resource
    Electronic Resource
    Active matrix of amorphous silicon multijunction color sensors for document imaging (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1334-1336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integrated color image sensor, made entirely with amorphous silicon (a-Si:H) large-area technology, is presented. The a-Si:H based sensor is a double-junction p-i-n-i-p photodiode that discriminates two spectral bands according to the bias voltage. The active-matrix addressed array has 512×512 pixels with 75 μm pixel pitch and uses thin-film transistors as pixel switches. The array structure and the spectral response are discussed, and color images taken by the system using two bias voltages demonstrate the compatibility of color sensors with large-area active-matrix addressing techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350592
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  • 15
    Electronic Resource
    Electronic Resource
    Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 667-669 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The activation kinetics of acceptors was investigated for heteroepitaxial layers of GaN, doped with Mg. After growth, the samples were exposed to isochronal rapid thermal anneals in the temperature range from 500 to 775 °C. The samples were studied by variable temperature Hall effect measurements and photoluminescence (PL) spectroscopy in the as-grown condition and after each temperature step. The thermal treatment reduced the resistivity by six orders of magnitude and the p-type conductivity was found to be dominated by an acceptor with an activation energy of ∼170 meV. This acceptor is attributed to Mg atoms substituting for Ga in the GaN lattice and the activation process is consistent with dissociation of electrically inactive Mg–H complexes. It is shown that the appearance of a blue emission band in the PL spectrum of Mg-doped GaN does not directly correlate with the increase in p-type conductivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116503
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  • 16
    Electronic Resource
    Electronic Resource
    Hole transport in polycrystalline pentacene transistors (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1658-1660 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of pentacene thin-film transistors are used to explore hole transport mechanisms. The grain-boundary barrier model does not account for the data, since no field dependence of the mobility is observed over a wide range of gate and drain voltages. Instead, trapping provides a more satisfactory qualitative and quantitative interpretation. The subthreshold characteristics are attributed to deep acceptors in the pentacene film, and the conclusions are supported by numerical modeling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456549
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  • 17
    Electronic Resource
    Electronic Resource
    Amorphous silicon thin-film transistors and arrays fabricated by jet printing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 610-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-change wax-based printed masks, in place of conventional photolithography, were used to fabricate hydrogenated amorphous silicon thin-film transistors (TFTs). Wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with source–drain contacts overlapping the channel were created using a four-mask process. The TFTs had current–voltage characteristics comparable to photolithographically patterned devices, with mobility of 0.6–0.9 cm2/V s, threshold voltage of 2–3 V, and on/off ratios exceeding 107 for devices with channel lengths below 50 μm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436273
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  • 18
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°-off GaAs substrates using ethyldimethylindium (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1007-1009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP/AlInP quantum wells (QWs) have been grown on (100) and 10°-off (100) GaAs substrates in an organometallic vapor phase epitaxy (OMVPE) reactor at reduced pressure. Photoluminescence (PL) studies revealed an increase in peak energy and narrowing in linewidth for the 10°-off QWs, due to the suppression of the formation of ordered microstructures during the OMVPE process. Low temperature PL results of GaInP/AlInP QWs as thin as 13 A(ring) are presented for the first time. The 10°-off QW showed a dominant peak at 551 nm, the shortest wavelength ever reported in GaInP/AlInP QWs. The origin of PL for the 13-A(ring) QWs is, however, different from that for thicker QWs as a result of the transfer of electrons to localized states in the barrier layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106504
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  • 19
    Electronic Resource
    Electronic Resource
    Hydrogenation of wide-band-gap II-VI semiconductors (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 3026-3028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of plasma-generated monatomic hydrogen into a wide-band-gap II-VI zincblende semiconductor (e.g. ZnSe) has been achieved by using a deposited layer of silicon dioxide as a hydrogen-permeable encapsulation to prevent decomposition (etching) of the semiconductor during hydrogenation. Depth profiles from secondary-ion mass spectrometry demonstrate deuterium penetration into ZnSe layers epitaxially grown on GaAs. Low-temperature photoluminescence reveals that the commonly observed donor-acceptor pair transitions are selectively removed by hydrogenation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107998
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  • 20
    Electronic Resource
    Electronic Resource
    Photoemission capacitance transient spectroscopy of n-type GaN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic defects in n-type GaN were characterized by photoemission capacitance transient spectroscopy. Conventional deep level transient spectroscopy is of limited use in semiconductors with wide band gaps (e.g., 3.4 eV for GaN at 300 K) because it utilizes thermal energy for charge emission which restricts the accessible range of bandgap energies to within ∼0.9 eV of either band edge, for practical measurement conditions. For electron photoemission to the conduction band, four deep levels were detected at optical threshold energies of approximately 0.87, 0.97, 1.25, and 1.45 eV. It is suggested that the above photodetected deep levels may participate in the 2.2 eV defect luminescence transitions, which are also demonstrated for our material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113235
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