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  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1872-1874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P-doped a-Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101264
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  • 2
    Electronic Resource
    Electronic Resource
    Analysis of double injection transients in amorphous silicon p-i-n diodes (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2331-2339 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we present results of both experimental and computer modeling studies of transient double injection currents in amorphous silicon p-i-n diodes. After the application of a forward bias step pulse, the current decays until there is a sudden sharp rise, often by two to three orders of magnitude. The delay time for this current increase varies from microseconds to many milliseconds, and it is found to be strongly dependent on the pulse repetition rate, applied bias, degradation state of the sample, and illumination. Our results are in good agreement with computer simulations of these phenomena. The sudden current rise is associated with a change in transport mechanism from electron space-charge limited current flow to bipolar recombination limited current flow. Experimentally and theoretically it is found that in a degraded device the delay time is also very dependent on the spatial position of the metastable defects, with those near the n+ contact having a much more dominant effect than those near the p+ contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351575
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  • 3
    Electronic Resource
    Electronic Resource
    Spatial distribution of cometary outbursts (1974)
    [s.l.] : Nature Publishing Group
    Nature 252 (1974), S. 615-616 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] PATASHNICK et al.1, in reproducing figures of the position of comets at the times of cometary outbursts from the papers of Pittich2,3, have omitted the outbursts of comet P/Schwassmann-Wachmann (1) (1925 II) which have been observed regularly since 1927 (ref. 2). Richter4'5 concluded that the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/252615b0
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  • 4
    Electronic Resource
    Electronic Resource
    Realistic modeling of the electronic properties of doped amorphous silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1083-1085 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we describe a fundamental approach to calculating the electronic properties of doped amorphous silicon which takes into account the thermal history of the material. Above the equilibrium temperature, the material is in a thermodynamically stable state, and this is derived by minimizing the free energy using a simple density of states model. The calculations are based on the defect compensation model of doping, introducing distributions of formation energies for neutral dangling bonds and fourfold dopant atoms while preserving charge neutrality. Our results are in good agreement with experimental data providing a realistic model for use in device simulation programs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100028
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  • 5
    Electronic Resource
    Electronic Resource
    Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 569-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a detailed study of structural and electronic properties of hydrogenated amorphous silicon-germanium alloys deposited by rf glow discharge from SiH4 and GeH4 in a diode reactor. The chemical composition of the alloys is related to the deposition conditions, with special emphasis on preferential incorporation of Ge into the solid phase and on the role of inert dilutant gases. Hydrogen bonding in the alloys is investigated with nuclear magnetic resonance and vibrational (Raman and infrared) spectroscopy. The optical properties of a-SiGe:H samples deposited under optimal conditions are analyzed with the help of subgap absorption measurements and band-tail luminescence for the entire range of alloy composi-tions. A large part of the article describes an investigation of the electron-spin-resonance response of undoped alloys. The spin density associated with dangling bond defects localized on Si and Ge atoms has been measured as a function of alloy composition for optimized material. In addition, the dependence of the two defect densities on the detailed deposition conditions (rf power, substrate temperature, and dilution) has been determined in a systematic way for alloys deposited from a plasma with a fixed SiH4/GeH4ratio. The results of this study, especially the preferential creation of Ge dangling bonds, are discussed in the context of our structural data. Furthermore, spin resonance is employed to investigate the light-induced degradation (Staebler–Wronski effect) of a-SiGe:H. Finally, the changes of the spin-resonance spectra of a-Si0.7 Ge0.3 :H upon substitutional doping with phosphorus and boron have been obtained experimentally, and are used to construct a model for the electronic density of states in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343574
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  • 6
    Electronic Resource
    Electronic Resource
    Interstitial Li doping of a-Si:H (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2272-2281 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study the process of interstitial doping of hydrogenated amorphous silicon (a-Si:H) by Li in-diffusion and thermal annealing after Li+ implantation using secondary ion mass spectrometry, dc dark conductivity [σ(T)], electron-spin resonance, and photothermal deflection spectroscopy measurements. All Li-doped a-Si:H samples were characterized by an inhomogeneous distribution of Li atoms. Doping by Li in-diffusion at 230 °C resulted in a Li-rich (up to 1021 cm−3) region at both sample interfaces, a large increase in σ(300 K), and the creation of deep paramagnetic (g=2.0061±0.0002, ΔHp.p.=5.4±0.4 G) defects with defect densities (up to 2×1018 cm−3) proportional to the interfacial Li concentration. Li+ implantation of a-Si:H at 373 K resulted in the creation of deep paramagnetic (g=2.0056±0.001, ΔHp.p.=6.0±0.5 G) defects with defect densities (up to 2×1018 cm−3) proportional to the implanted Li+ dose. Isochronal vacuum annealing of Li+-implanted a-Si:H up to 545 K resulted in an exponential increase of σ(300 K) and an activated (Ea=+0.32 eV) decrease of the spin density with increasing anneal temperatures. Both Li in-diffused and annealed Li+-implanted a-Si:H films displayed thermal equilibration behavior similar to that characteristic of P-doped a-Si:H, which suggests that the defect compensation model of substitutional doping of a-Si:H is also applicable to the case of interstitial doping. However, the defect structure of a-Si:H doped by Li in-diffusion is significantly different than that of both undoped and P-doped a-Si:H due to the precipitation of Li at the interfaces of heavily Li-doped a-Si:H. We discuss the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342841
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  • 7
    Electronic Resource
    Electronic Resource
    Crosstalk and lateral conduction effects in continuous-sensor amorphous silicon imagers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8193-8201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies are reported of the image-blur effects caused by lateral crosstalk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. Data are obtained from high fill factor sensor arrays using 512×512 pixels of 75 μm size and a pixel gap of 10 μm. Measurements of the line-spread function determine the charge transfer from the illuminated pixel to neighboring ones along both array orientations, and for different samples and operating conditions. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and field enhancement of the interface conduction due to the bias applied to the address lines. We show that the crosstalk can be controlled by the choice of operating conditions and optimization of the materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370111
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  • 8
    Electronic Resource
    Electronic Resource
    Simulated and measured data-line parasitic capacitance of amorphous silicon large-area image sensor arrays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 638-647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations and measurements of parasitic capacitance in active matrix sensor arrays used for light and x-ray imaging are presented. We focus on arrays with continuous sensor layers and base the calculations on actual structures used for x-ray and light imaging. Different cross sections of the pixel allow the various components of the capacitance from the thin film transistor, the sensor, and metal crossovers to be determined by numerical two-dimensional solution of Poisson's equation. The calculations give the total and the individual components of the parasitic capacitance in the data line, and allow us to evaluate their effect on electronic noise and imager sensitivity. The theoretical values are compared to measurements performed on arrays with 75 μm pixel pitch, showing agreement within 10%–20%. The numerical simulations are used to determine the optimized array configuration that can reduce the parasitic capacitance to ∼6 fF/pixel, which is only 15% of the present values. The capacitance is compared for direct and indirect x-ray detection imagers, using PbI2 and a-Si:H sensor layers, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323529
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  • 9
    Electronic Resource
    Electronic Resource
    Electronic transport in polycrystalline Pbl2 films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2660-2667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport and optical measurements in polycrystalline Pbl2 are reported as part of a study to evaluate the material for large area x-ray imaging applications. The films are deposited by vacuum evaporation with thickness 20–100 μm and have grain sizes of up to 10 μm. The room temperature hole drift mobility measured by time-of-flight is 2×10−2–1.5×10−1 cm2/V s, depending on the specific sample, with an activation energy of 0.25 eV. Hole charge collection measurement gives about 10−6 cm2/V for the mobility–lifetime product. Details of the electron transport were not determined in this study because the mobility is too small. The hole transport is discussed in terms of a trapping model with either a discrete level above the valence band or a disorder-induced band tail. Optical absorption, photoconductivity, and Hall effect measurements are also reported. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371107
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  • 10
    Electronic Resource
    Electronic Resource
    Two-color amorphous silicon image sensor (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1589-1599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area two-color image sensor array made with amorphous silicon (a-Si:H) technology is described. Mesa-isolated double-junction p-i-n-i-p a-Si:H sensors discriminate the two spectral bands—blue/green and red—according to the polarity of the applied voltage bias. The 512×512 element active-matrix array with 75 μm pixel pitch is addressed using a-Si:H thin-film switching transistors. Under steady state illumination, the array exhibits a linear response, good color separation, and good spatial response as measured by the line-spread function, so that images obtained with the array are clear and sharp. The response to transient illumination exhibits image lag and a strong dependence of the signal on integration time, both of which depend on the bias polarity. Switching the bias voltage also induces strong transient properties. These effects are attributed to the back-to-back diodes, which act as capacitative dividers in the generation and readout of the signal. The transient effects compromise the practical application of the color sensors for video color imaging. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381547
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