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  • 1
    Electronic Resource
    Electronic Resource
    Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1132-1134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out-diffusion and microstructure show that hydrogen out-diffusion depends strongly on film structure and the laser energy density. Both high quality and low leakage bottom gate polycrystalline silicon and a-Si:H thin film transistors were monolithically fabricated on the same Corning 7059 glass substrate with a maximum process temperature of only 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110829
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  • 2
    Electronic Resource
    Electronic Resource
    Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3194-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective dehydrogenation and crystallization are realized by a three-step incremental increase in laser energy density. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those after a conventional one-step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few micrometers. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated to the material properties, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors. Our structure simplifies fabrication of both high quality amorphous and polycrystalline thin film transistors on the same glass substrate. We discuss the application of this process for producing hybrid amorphous and polycrystalline silicon thin film transistors from hydrogenated amorphous silicon on glass substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357505
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  • 3
    Electronic Resource
    Electronic Resource
    Structural, optical, and spin properties of hydrogenated amorphous silicon-germanium alloys (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 569-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a detailed study of structural and electronic properties of hydrogenated amorphous silicon-germanium alloys deposited by rf glow discharge from SiH4 and GeH4 in a diode reactor. The chemical composition of the alloys is related to the deposition conditions, with special emphasis on preferential incorporation of Ge into the solid phase and on the role of inert dilutant gases. Hydrogen bonding in the alloys is investigated with nuclear magnetic resonance and vibrational (Raman and infrared) spectroscopy. The optical properties of a-SiGe:H samples deposited under optimal conditions are analyzed with the help of subgap absorption measurements and band-tail luminescence for the entire range of alloy composi-tions. A large part of the article describes an investigation of the electron-spin-resonance response of undoped alloys. The spin density associated with dangling bond defects localized on Si and Ge atoms has been measured as a function of alloy composition for optimized material. In addition, the dependence of the two defect densities on the detailed deposition conditions (rf power, substrate temperature, and dilution) has been determined in a systematic way for alloys deposited from a plasma with a fixed SiH4/GeH4ratio. The results of this study, especially the preferential creation of Ge dangling bonds, are discussed in the context of our structural data. Furthermore, spin resonance is employed to investigate the light-induced degradation (Staebler–Wronski effect) of a-SiGe:H. Finally, the changes of the spin-resonance spectra of a-Si0.7 Ge0.3 :H upon substitutional doping with phosphorus and boron have been obtained experimentally, and are used to construct a model for the electronic density of states in this material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343574
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  • 4
    Electronic Resource
    Electronic Resource
    Crosstalk and lateral conduction effects in continuous-sensor amorphous silicon imagers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8193-8201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies are reported of the image-blur effects caused by lateral crosstalk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. Data are obtained from high fill factor sensor arrays using 512×512 pixels of 75 μm size and a pixel gap of 10 μm. Measurements of the line-spread function determine the charge transfer from the illuminated pixel to neighboring ones along both array orientations, and for different samples and operating conditions. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and field enhancement of the interface conduction due to the bias applied to the address lines. We show that the crosstalk can be controlled by the choice of operating conditions and optimization of the materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370111
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic transport in polycrystalline Pbl2 films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2660-2667 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport and optical measurements in polycrystalline Pbl2 are reported as part of a study to evaluate the material for large area x-ray imaging applications. The films are deposited by vacuum evaporation with thickness 20–100 μm and have grain sizes of up to 10 μm. The room temperature hole drift mobility measured by time-of-flight is 2×10−2–1.5×10−1 cm2/V s, depending on the specific sample, with an activation energy of 0.25 eV. Hole charge collection measurement gives about 10−6 cm2/V for the mobility–lifetime product. Details of the electron transport were not determined in this study because the mobility is too small. The hole transport is discussed in terms of a trapping model with either a discrete level above the valence band or a disorder-induced band tail. Optical absorption, photoconductivity, and Hall effect measurements are also reported. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371107
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  • 6
    Electronic Resource
    Electronic Resource
    Comparison of PbI2 and HgI2 for direct detection active matrix x-ray image sensors (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3345-3355 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The factors determining the x-ray sensitivity of HgI2 and PbI2 as direct detector materials for large area matrix addressed x-ray image sensors are described, along with a model to explain their different properties. The imaging studies are made on test arrays with 512×512 pixels of size 100 μm. The x-ray sensitivity and spatial resolution are reported, along with measurements of the various mechanisms that influence the sensitivity, such as charge collection, x-ray absorption, fill factor, and image lag. The spatial resolution of PbI2 decreases with increasing film thickness, but this effect is not observed in HgI2. The x-ray response data are used to compare the sensitivity to the theoretical values for the ionization energy and to identify the various loss mechanisms. We find that the sensitivity of HgI2 can be explained by a few small and well characterized loss factors. This material exhibits good spatial resolution, high fill factor, and high charge collection. PbI2 films exhibit lower sensitivity, principally attributable to a very large image lag. We propose that the x-ray response of the two materials is distinguished by their different depletion layer properties, and present a model that accounts for the sensitivity, image lag, and spatial resolution of PbI2. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436298
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  • 7
    Electronic Resource
    Electronic Resource
    Amorphous silicon thin-film transistors and arrays fabricated by jet printing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 610-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-change wax-based printed masks, in place of conventional photolithography, were used to fabricate hydrogenated amorphous silicon thin-film transistors (TFTs). Wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with source–drain contacts overlapping the channel were created using a four-mask process. The TFTs had current–voltage characteristics comparable to photolithographically patterned devices, with mobility of 0.6–0.9 cm2/V s, threshold voltage of 2–3 V, and on/off ratios exceeding 107 for devices with channel lengths below 50 μm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436273
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  • 8
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation in undoped microcrystalline silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1626-1628 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen in undoped, unalloyed microcrystalline silicon (μc-Si:H) has been investigated with secondary-ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma-enhanced chemical vapor deposition with hydrogen to silane dilution ratios (H2:SiH4) ranging from 0:1 to 98:1. Microcrystallinity is obtained for dilution ratios of 20:1 and greater. The hydrogen concentration is shown to depend nonmonotonically on the degree of hydrogen dilution. The H concentration in the films decreases with dilution for ratios from 0:1 to 10:1 and then increases with greater dilution. This dependence on dilution is established with both NMR and SIMS and suggests the existence of competing processes in the incorporation of hydrogen during deposition. It is further observed that the formation of microcrystallites is accompanied by the appearance of both higher order silicon hydrides and large concentrations of unbound molecular hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99932
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  • 9
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced crystallization of hydrogenated amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2222-2224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103897
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  • 10
    Electronic Resource
    Electronic Resource
    A decomposition of the paraelectric spectrum of KBr:Li^+ using hydrostatic pressure
    Amsterdam : Elsevier
    Solid State Communications 51 (1984), S. 685-690 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(84)90947-5
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