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  • 1
    Electronic Resource
    Electronic Resource
    Laser dehydrogenation/crystallization of plasma-enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1132-1134 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low temperature process for laser dehydrogenation and crystallization of hydrogenated amorphous silicon (a-Si:H) has been developed. This process removes hydrogen by laser irradiations at three energy steps. Studies of hydrogen out-diffusion and microstructure show that hydrogen out-diffusion depends strongly on film structure and the laser energy density. Both high quality and low leakage bottom gate polycrystalline silicon and a-Si:H thin film transistors were monolithically fabricated on the same Corning 7059 glass substrate with a maximum process temperature of only 350 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110829
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  • 2
    Electronic Resource
    Electronic Resource
    Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3194-3199 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective dehydrogenation and crystallization are realized by a three-step incremental increase in laser energy density. X-ray diffraction and transmission electron microscopy show that the polycrystalline grains formed with this three-step process are similar to those after a conventional one-step laser crystallization of unhydrogenated amorphous silicon. The grain size increases with increasing laser energy density up to a peak value of a few micrometers. The grain size decreases with further increases in laser energy density. The transistor field effect mobility is correlated to the material properties, increasing gradually with laser energy density until reaching its maximum value. Thereafter, the transistors suffer from leakage through the gate insulators. A dual dielectric gate insulator has been developed for these bottom-gate thin film transistors. Our structure simplifies fabrication of both high quality amorphous and polycrystalline thin film transistors on the same glass substrate. We discuss the application of this process for producing hybrid amorphous and polycrystalline silicon thin film transistors from hydrogenated amorphous silicon on glass substrates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357505
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  • 3
    Electronic Resource
    Electronic Resource
    Preparation of oriented Bi-Ca-Sr-Cu-O thin films using pulsed laser deposition (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 337-339 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oriented c-axis thin films of Bi-Ca-Sr-Cu-O on [100] SrTiO3 substrates have been fabricated using the pulsed excimer laser evaporation technique. Deposition at room temperature in 1 mTorr oxygen followed by an 875 °C anneal in oxygen yields superconducting films with zero resistance at 80 K and a resistivity drop near 110 K, hinting at the presence of another superconducting phase. Transmission electron microscopy shows that the films are epitaxial with the substrate, with an abrupt and planar interface boundary. The observed crystal structure is consistent with diffraction results on bulk materials.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99909
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  • 4
    Electronic Resource
    Electronic Resource
    Si diffusion and intermixing in AlGaAs/GaAs structures using buried impurity sources (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2522-2524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si diffusion and impurity-induced layer intermixing from a buried impurity source have been studied by transmission electron microscopy and secondary ion mass spectroscopy of isolated, Si-doped GaAs layers in an undoped Al0.4Ga0.6As/GaAs superlattice and by photoluminescence measurements on Si-doped GaAs quantum wells with undoped Al0.4Ga0.6As barriers. In annealed samples, the Si profile suggests a Si diffusion process involving multiply ionized column III vacancies. The width of the resulting Si profile and the spatial extent and completeness of intermixing strongly depend on the initial Si concentration in the doped layer. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113154
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  • 5
    Electronic Resource
    Electronic Resource
    Excimer-laser-induced crystallization of hydrogenated amorphous silicon (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2222-2224 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic transport properties and structural morphology of fast-pulse excimer-laser- crystallized hydrogenated amorphous silicon (a-Si:H) thin films have been measured. The room-temperature dark dc conductivities and Hall mobilities increase by several orders of magnitude at well-defined laser energy density thresholds which decrease as the impurity concentration in the films increases. The structural morphology of the films suggests an impurity-induced reduction of the a-Si:H melt temperature as the origin of this behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103897
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  • 6
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on 10°-off GaAs substrates using ethyldimethylindium (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1007-1009 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInP/AlInP quantum wells (QWs) have been grown on (100) and 10°-off (100) GaAs substrates in an organometallic vapor phase epitaxy (OMVPE) reactor at reduced pressure. Photoluminescence (PL) studies revealed an increase in peak energy and narrowing in linewidth for the 10°-off QWs, due to the suppression of the formation of ordered microstructures during the OMVPE process. Low temperature PL results of GaInP/AlInP QWs as thin as 13 A(ring) are presented for the first time. The 10°-off QW showed a dominant peak at 551 nm, the shortest wavelength ever reported in GaInP/AlInP QWs. The origin of PL for the 13-A(ring) QWs is, however, different from that for thicker QWs as a result of the transfer of electrons to localized states in the barrier layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106504
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  • 7
    Electronic Resource
    Electronic Resource
    Capillary waves in pulsed excimer laser crystallized amorphous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2138-2140 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During short-pulse laser crystallization of amorphous silicon on quartz, surface roughening occurs via the freezing of capillary waves excited in the silicon melt. The velocity and viscous damping of these capillary waves is computed and discussed. Volume change of the silicon during solidification appears to drive liquid silicon toward the last areas of solidification. Film thickness variation observed by transmission electron microscopy and atomic force microscopy shows increased film thickness at grain boundaries, and vertices of single pulse irradiated films. This effect is most pronounced within a narrow laser fluence regime wherein large lateral grain growth occurs. For 100 nm thick amorphous silicon films on quartz, this regime extends from approximately 520 to 560 mJ/cm2; standard deviation roughness can be as large as 40 nm. These effects have important implications for large area thin film transistor manufacturing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115610
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  • 8
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of sol-gel derived Pb(Zr,Ti)O3 thin films on SrTiO3 and MgO (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 822-824 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb(Zr0.52Ti0.48)O3 (PZT) thin films were crystallized on SrTiO3 (100) and MgO (100) substrates by a sol-gel process using nonhydrolyzed metal methoxyethoxide precursors, spin coating, and rapid thermal annealing. Solid phase epitaxial growth of PZT on SrTiO3 was observed directly from the amorphous phase even at 425 °C. The PZT had a single (001) orientation and rocking curve full width at half maximum (FWHM) less than 0.1°. High-temperature annealing of MgO substrates improved orientation of PZT thin films. Epitaxial crystallization of PZT with a single (001) orientation on the annealed MgO was observed at temperature above 550 °C after the formation of the pyrochlore phase. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113433
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial MgO on GaAs(111) as a buffer layer for z-cut epitaxial lithium niobate (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1029-1031 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial system z-lithium niobate on GaAs(111)A and GaAs(111)B has been demonstrated by in situ pulsed laser deposition both with and without intermediate layers of MgO(111). The in-plane epitaxial relationships are LiNbO3[110](parallel)GaAs[2¯11] and [21¯1¯] indicating the existence of 180° boundaries in the LiNbO3 both with and without the MgO layer, which grows cube-on-cube with the GaAs. Out-of-plane texture is typically 1.0° and 1.2° for the MgO and LiNbO3 layers, respectively. In-plane texture is typically 2.8° and 4.5° for the MgO and LiNbO3 layers, respectively. This epitaxial system may be useful for monolithic electro-optic or frequency doubling applications in conjunction with semiconductor laser diodes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109824
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  • 10
    Electronic Resource
    Electronic Resource
    Strain and defect generation during interdiffusion of GaAs into Al0.5In0.5P (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2060-2062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results on the analysis of the interdiffusion process of a discrete GaAs layer into an Al0.5In0.5P half space using Si doping as an agent for enhanced layer interdiffusion. We have observed enhanced interdiffusion on both column III and column V sites, with the column III interdiffusion coefficient exceeding the column V interdiffusion coefficient by two orders of magnitude. Due to the disparity between these diffusion coefficients, substantial defect producing strain is introduced by the interdiffusion process. We have shown that by modeling the resulting strain profiles and applying a generalization of a critical thickness analysis, the instability of such interdiffused structures can be understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109479
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