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  • 1
    Electronic Resource
    Electronic Resource
    Orientational correlations and order in A3C60 (1993)
    Springer
    Applied physics 56 (1993), S. 215-217 
    Details
    ISSN: 1432-0630
    Keywords: 71.25.Mg ; 71.25.Rk ; 71.20.−b ; 36.40.+d
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A tight-binding method which has been previously applied to study the effect of uncorrelated orientational disorder on conduction-band properties is extended here to the case of systems with long-range order and/or short-range correlations. The density of states and conductivity are not highly sensitive to the specific short-range correlations, so long as the system is not too close to being fully ordered. Hence the strong effects of disorder found previously appear to be robust and should play an important role in the interpretation of normal-state properties of A3C60.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00539477
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  • 2
    Electronic Resource
    Electronic Resource
    Novel surface gate structure to induce sharp potential barriers in two-dimensional electron systems (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel surface gate structure, consisting of a central gate and two side gates, is proposed to generate an effectively sharp potential barrier for two-dimensional electrons confined to a semiconductor heterojunction deep below the sample surface. The side gates are biased at a higher potential than the central gate to enhance the large-wave-vector Fourier components of the potential and therefore to compensate partially for the strong decay, due to fringing fields, of these components as a function of the distance below the surface. The reflection coefficient calculated for the proposed potential barrier exhibits strong oscillations as a function of barrier height, much stronger than a conventional single gate. The results suggest that the proposed gate structure should find use in realization of an electron interferometer which can serve as a building block for novel electron interference devices. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112730
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  • 3
    Electronic Resource
    Electronic Resource
    Catalytic oxidation of carbon monoxide on palladium. 1. Effect of pressure (1990)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 94 (1990), S. 1203-1206 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100366a037
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  • 4
    Electronic Resource
    Electronic Resource
    Crosstalk and lateral conduction effects in continuous-sensor amorphous silicon imagers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8193-8201 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Studies are reported of the image-blur effects caused by lateral crosstalk between neighboring pixels of large-area amorphous silicon (a-Si:H) image sensors. Data are obtained from high fill factor sensor arrays using 512×512 pixels of 75 μm size and a pixel gap of 10 μm. Measurements of the line-spread function determine the charge transfer from the illuminated pixel to neighboring ones along both array orientations, and for different samples and operating conditions. The lateral conduction is attributed to three effects: conduction along the interface between the a-Si:H film and the underlying passivation; field-dependent electron injection at the edge of the sensor; and field enhancement of the interface conduction due to the bias applied to the address lines. We show that the crosstalk can be controlled by the choice of operating conditions and optimization of the materials. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370111
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  • 5
    Electronic Resource
    Electronic Resource
    Simulated and measured data-line parasitic capacitance of amorphous silicon large-area image sensor arrays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 638-647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Calculations and measurements of parasitic capacitance in active matrix sensor arrays used for light and x-ray imaging are presented. We focus on arrays with continuous sensor layers and base the calculations on actual structures used for x-ray and light imaging. Different cross sections of the pixel allow the various components of the capacitance from the thin film transistor, the sensor, and metal crossovers to be determined by numerical two-dimensional solution of Poisson's equation. The calculations give the total and the individual components of the parasitic capacitance in the data line, and allow us to evaluate their effect on electronic noise and imager sensitivity. The theoretical values are compared to measurements performed on arrays with 75 μm pixel pitch, showing agreement within 10%–20%. The numerical simulations are used to determine the optimized array configuration that can reduce the parasitic capacitance to ∼6 fF/pixel, which is only 15% of the present values. The capacitance is compared for direct and indirect x-ray detection imagers, using PbI2 and a-Si:H sensor layers, respectively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1323529
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  • 6
    Electronic Resource
    Electronic Resource
    Two-color amorphous silicon image sensor (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1589-1599 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large-area two-color image sensor array made with amorphous silicon (a-Si:H) technology is described. Mesa-isolated double-junction p-i-n-i-p a-Si:H sensors discriminate the two spectral bands—blue/green and red—according to the polarity of the applied voltage bias. The 512×512 element active-matrix array with 75 μm pixel pitch is addressed using a-Si:H thin-film switching transistors. Under steady state illumination, the array exhibits a linear response, good color separation, and good spatial response as measured by the line-spread function, so that images obtained with the array are clear and sharp. The response to transient illumination exhibits image lag and a strong dependence of the signal on integration time, both of which depend on the bias polarity. Switching the bias voltage also induces strong transient properties. These effects are attributed to the back-to-back diodes, which act as capacitative dividers in the generation and readout of the signal. The transient effects compromise the practical application of the color sensors for video color imaging. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1381547
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  • 7
    Electronic Resource
    Electronic Resource
    Amorphous silicon thin-film transistors and arrays fabricated by jet printing (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 610-612 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-change wax-based printed masks, in place of conventional photolithography, were used to fabricate hydrogenated amorphous silicon thin-film transistors (TFTs). Wax-mask features with a minimum feature size of ∼20 μm were achieved using an acoustic-ink-printing process. Both discrete and matrix addressing structured bottom-gate TFTs with source–drain contacts overlapping the channel were created using a four-mask process. The TFTs had current–voltage characteristics comparable to photolithographically patterned devices, with mobility of 0.6–0.9 cm2/V s, threshold voltage of 2–3 V, and on/off ratios exceeding 107 for devices with channel lengths below 50 μm. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436273
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  • 8
    Electronic Resource
    Electronic Resource
    Active matrix of amorphous silicon multijunction color sensors for document imaging (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1334-1336 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An integrated color image sensor, made entirely with amorphous silicon (a-Si:H) large-area technology, is presented. The a-Si:H based sensor is a double-junction p-i-n-i-p photodiode that discriminates two spectral bands according to the bias voltage. The active-matrix addressed array has 512×512 pixels with 75 μm pixel pitch and uses thin-film transistors as pixel switches. The array structure and the spectral response are discussed, and color images taken by the system using two bias voltages demonstrate the compatibility of color sensors with large-area active-matrix addressing techniques. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350592
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  • 9
    Electronic Resource
    Electronic Resource
    Quantum reflection and transmission of ballistic two-dimensional electrons by a potential barrier (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1154-1156 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the reflection and transmission coefficients of ballistic two-dimensional electrons by a potential barrier, induced via a surface gate, reveal that both coefficients vary gradually with the barrier height when it is less then the electron Fermi energy. Superimposed on the gradual variation, oscillatory structure which are consistent with interference resonances are also observed. The data imply that the potential barrier seen by the two-dimensional electrons is sharp compared to the electron wavelength.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112126
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  • 10
    Electronic Resource
    Electronic Resource
    Decomposition of methanol on oxygen-modified Fe(100) surfaces I. The effect of high temperature oxygen modification
    Amsterdam : Elsevier
    Surface Science Letters 218 (1989), S. A395 
    Details
    ISSN: 0167-2584
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-2584(89)90735-4
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