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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1767-1774 
    ISSN: 0392-6737
    Keywords: Impurity and defect absorption in solids
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto I centri microscopici di diffusione in cristalli accresciuti di AgGaS2 sono stati studiati col microscopio ottico e col microscopio elettronico a scansione. I difetti consistono in placchette rettangolari che giacciono nei piani (100) e (010). La loro dimensione maggiore (fino a 100 μm) era parallela alla direzione [001]. La loro dimensione minore è parallela alle direzioni [100] e [010], rispettivamente. I centri di diffusione erano usualmente spessi alcune frazioni di micrometro e non sembravano avere una composizione diversa dalla fase della matrice, secondo risultati dell'analisi a disperisione di energia. I difetti possono essere eliminati per ricottura in Ag2S o spegnimento da temperature elevate, il che suggerisce che i difetti possono essi stessi consistere in una regione a due fasi, parte della quale dovrebbe essere ricca di Ga2S3, dove particelle della seconda fase a barretta o a placchetta sono inglobate nella matrice. La quantità e le dimensioni di questa seconda fase rendono difficile un'analisi definitiva della composizione.
    Abstract: Резюме Используя оптическую и электронную сканируюшую микросконию, исследуются микроскопические центры рассеяния в AgGaS2. Дефекты состоят из прямоугольных пластинок, расположенных в плоскостях (100) и (010). Их наибольший размер (до 100 мкм) параллелен направлению [001]. Их наименьший размер соответственно располозен параллельно направлениям [100] и [010]. Центры рассеяния обычно представляют осколки микронной толщины и согласно анализу диссипации энергии, по-видимому, имеют состав, не отличающийся от матричной фазы. Дефекты могут быть удалены поредством отжита Ag2S или посредством закалки. Предполагается, что сами дефекты могут состоять из двухфазных областей, часть из которых должна быть обогащена Ga2S3, где стержне-подобные и пластино-подобные частицы второй фазы внедрены в матрипу. Количество и размер второй фазы затрудняет окончательный анализ состава.
    Notes: Summary Microscopic scattering centers in as-grown AgGaS2 were investigated by optical and scanning electron microscopy. The defects consisted of rectangular platelets lying in the (100) and (010) planes. Their longest dimension (up to 100 μm) was parallel to the [001]-direction. Their shorter dimension was parallel to the [100] and [010] directions, respectively. The scattering centers were usually fractions of a micrometer thick and did not appear to have a different composition than the matrix phase according to results by energy-dispersive analysis. The defects can be eliminated by annealing in Ag2S or quenching from elevated temperature, which suggests that the defects may themselves consist of a two-phase region, part of which should be Ga2S3-rich, where rodlike or platelike second-phase particles are embedded in the matrix. The quantity and the size of this second phase make a definitive compositional analysis difficult.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 1964-1970 
    ISSN: 0392-6737
    Keywords: Electron paramagnetic resonance and relaxation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Gli ioni di sostituzione Co2+ e Mn2+ in due diverse posizioni nel Cd nel composto CsCdCl3 sono state studiati usando la risonanza paramagnetica elettronica. L'occupazione preferenziale, Co2+ nel sito CdII, Mn2+ nel sito CdI, è discussa in termini di argomenti di simmetria della chimica dei cristalli.
    Abstract: Резюме Используя электронный парамагнитный резонанс, в соединении CsCdCl3 исследуются местоположения ионов замещения Co2+ и Mn2+ в двух различных положениях Cd. В терминах кристалло-химической симметрии обсуждается предпочтительное расположение Co2+ в положении CdII и Mn2+ в положении CdI.
    Notes: Summary Substitutional Co2+ and Mn2+ ions at the two different Cd sites in the compound CsCdCl3 have been studied by using electron paramagnetic resonance. The preferential occupation, Co2+ in the CdII site, Mn2+ in the CdI site, is discussed in terms of crystallochemical symmetry arguments.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 598-599 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a photothermal method for making point measurements of the thermal conductivities of high Tc superconductors. Images made at room temperature on polycrystalline materials show the thermal inhomogeneities. Measurements on single-crystal Bi2Sr2CaCu2Ox compounds reveal a very large anisotropy of about 7:1 in the thermal conductivity.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1489-1491 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Synchronous noncollinear upconversion detection is reported for the first time with a Nd:YAG laser in AgGaS2. Q-switched pump laser pulses with a repetition rate up to 50 Hz were synchronized with intracavity chopped continuous wave CO2 laser pulses. Results were obtained both by tuning the CO2 laser and by varying the angle between the laser beams.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 5552-5554 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A periodic structure of bonded GaAs wafers has been proposed for quasi-phase-matched second-harmonic generation. However, current bonding processes used to fabricate these structures often lead to unacceptably high optical losses. When commercial semi-insulating GaAs wafers were bonded at 850 °C, increases in the free-hole concentration (thermal conversion) were found to be a major cause of excess optical loss. This conversion depended on both the GaAs source and the materials comprising the sample holder. We found that quartz and sapphire could not be used in contact with GaAs wafers because they stuck during the bonding process. On the other hand, As-charged graphite holders did not stick and worked well under our bonding conditions. © 1998 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5282-5284 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The prospect of temperature tunability in an AgGaSe2 crystal for use in infrared nonlinear optics is explored for the first time. Tunable second harmonic generation from CO2 laser radiation is studied at different temperatures of the crystal. The tuning offered is small and the experimental finding is consistent with dispersion measurement.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2583-2590 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and low-energy electron diffraction (LEED) have been used to study the polar (111)Cd and (111)Te surfaces of intrinsic CdTe crystals. Complementary information on surface composition, chemical state of the surface elements, and surface structure was obtained. The Auger parameters were used to identify the chemical states of elements on surfaces of semi-insulating undoped CdTe crystals which suffered from static charging effects. With this approach, we were able to determine that after chem-mechanical polishing, the Te-rich surface layer was mostly in the pure Te state. Only a trace amount of TeO2 was detectable. Sputtered and vacuum annealed (111) surfaces were found to be stoichiometric: both Cd and Te were in the chemical state of CdTe. Both (111) Cd and (111) Te surfaces showed sixfold symmetric LEED patterns. No evidence of surface reconstruction was found. Angle-resolved XPS showed no significant difference between 0° and 70° tilt on either the (111) Cd or (111) Te surfaces. Angle-resolved AES, however, showed significant differences between (111) Cd and (111) Te at 0° and 70° tilt, and the crystallographic polarity identified this way was consistent with results based on chemical etching and standard AES techniques, and with reported results of x-ray diffraction and transmission electron microscopy.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1024-1028 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An optical pyrometer has been developed which resolves 20 μm at a working distance of 24 in. and measures relative temperature differences of ±2 °C over the range 1000–2000 °C. The instrument is particularly suitable for measuring temperature or emissivity distributions in very small heated objects.
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6213-6217 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermoelectric properties of CoP3 and CeFe4P12 have been measured. These compounds were synthesized by a flux technique using Sn as the solvent. The samples were characterized by x-ray diffractometry and electron microprobe analyses. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured over a wide range of temperatures. The results indicate that CoP3 and CeFe4P12 are semiconductors, in agreement with theoretical predictions. The thermal conductivity of CeFe4P12 is about 10 times larger than that for CeFe4Sb12 which is primarily due to both reduced motion of the Ce ions in smaller voids and lower hole–phonon scattering. The results are analyzed and discussed to provide guidelines for optimization of the thermoelectric properties of these materials. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1344-1348 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermoelectric properties of CeFe4As12 have been measured. The compound was synthesized by reacting a powder mixture of CeAs2 and FeAs2 with As metal. The sample was characterized by both x-ray diffractometry and electron microprobe analysis. The Seebeck coefficient, electrical resistivity, Hall effect, and the thermal conductivity were measured between room temperature and about 900 K. The results indicate that CeFe4As12 possesses semimetallic behavior similar to that of CeFe4Sb12 with a room temperature electrical resistivity of 0.49 mΩ cm and a Seebeck coefficient of about 40 μV/K. The thermal conductivity of CeFe4As12 lies between that of CeFe4P12 and CeFe4Sb12 as may be expected from considerations of anionic mass and rattling effect of Ce atoms inside the skutterudite unit cell. A maximum thermoelectric figure of merit value of about 0.4 was obtained at 850 K for this compound. © 2002 American Institute of Physics.
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