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  • 11
    Electronic Resource
    Electronic Resource
    Trapping and reflection coefficients for3He in Ni at oblique incidence (1983)
    Springer
    Applied physics 31 (1983), S. 37-44 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The areal density and the depth distribution of3He trapped in Ni as a function of the bombarding fiuence was measured in the energy range of 1–25 keV and at angles of incidence between 0 and 85° using nuclear reaction analysis. At fluences below saturation a linear relation is found between the areal density and the fiuence. From its slope the trapping and reflection coefficients can be determined. The experimental data for trapping and reflection coefficients and for the depth profiles were compared with computer simulation results from the TRIM program. To reduce uncertainties in the absolute values of the experimental trapping coefficients, they were normalized to the TRIM values at normal incidence. The dependence of the measured reflection coefficient on the angle of incidence between 0 and 80° shows good agreement with the calculated data for incident energies from 3 to 25 keV, but for 1 keV the measured reflection coefficients are higher than the calculated ones.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617186
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  • 12
    Electronic Resource
    Electronic Resource
    Energy dependence of heavy ion collisions ^4He + ^1^2C and ^1^2C + ^1^2C elastic scattering
    Amsterdam : Elsevier
    Nuclear Physics, Section A 477 (1988), S. 713-722 
    Details
    ISSN: 0375-9474
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0375-9474(88)90414-9
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  • 13
    Electronic Resource
    Electronic Resource
    Molecular action of tricholin, a ribosome-inactivating protein isolated from Trichoderma viride (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Molecular microbiology 5 (1991), S. 0 
    Details
    ISSN: 1365-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Medicine
    Notes: An extracellular protein was isolated from a species of soil-borne fungi (Trichoderma viride) and its amino acid composition has been determined. The protein is acidic with a molecular mass of 14 200 daltons and is given the trivial name tricholin. Tricholin is a potent inhibitor of cell-free protein synthesis. When rabbit reticulocyte lysate was incubated with tricholin at a concentration of 6.3 × 10−7 M, it completely abolished the capacity of the lysate to support protein synthesis. The inhibition appears to be due to its reaction to ribosomes, since it generates a specific cleavage product, an α-sarcin RNA fragment, from reticulocyte ribosomal RNA. This reaction to ribosomes mimics that of α-sarcin. The antibody of α-sarcin strongly cross-reacts with tricholin, while the antibody of tricholin shows a weak reaction with α-sarcin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2958.1991.tb01860.x
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  • 14
    Electronic Resource
    Electronic Resource
    Infrared absorption of Ir and IrSi thin films on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 310-312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100995
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  • 15
    Electronic Resource
    Electronic Resource
    Zone-melting recrystallization with enhanced radiative heating for preparation of subboundary-free silicon-on-insulator thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1238-1240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new zone-melting-recrystallization (ZMR) configuration with enhanced radiative heating has been developed for preparing silicon-on-insulator (SOI) films. With this configuration, in which the sample is positioned above the movable heater with the SOI film facing downward, subboundary-free 0.5-μm-thick SOI films are obtained over a much wider range of experimental parameters than with the conventional ZMR configuration. The characterization of these films by defect etching, optical microscopy, and transmission electron microscopy shows that the principal defects are isolated threading dislocations with a density of ∼106 cm−2. It should be possible to improve the material quality still further by optimizing experimental conditions for the new configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102465
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  • 16
    Electronic Resource
    Electronic Resource
    Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1152-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337360
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  • 17
    Electronic Resource
    Electronic Resource
    Selective tungsten silicide formation by ion-beam mixing and rapid thermal annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1890-1894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Smooth layers of tungsten silicide have been formed on silicon substrates by deposition of a tungsten film, As+ ion implantation through the film to produce ion-beam mixing, and rapid thermal annealing. This process has been used to form tungsten silicide selectively in patterned openings etched in the SiO2 film on oxidized Si wafers, without lateral silicide growth. Rapid thermal annealing results in the activation of the As implanted in the Si substrate, without significant redistribution, to form shallow n+-p junctions with good electrical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334421
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  • 18
    Electronic Resource
    Electronic Resource
    Effect of a magnetic field on the stability of the flow of molten material in laser cutting processes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2780-2790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this analysis, the generalized kinematic equation for the thickness of the molten film is derived by perturbation methods and the method of multiple scales is used to investigate the weakly nonlinear stability of the flow of molten material in laser cutting under a transverse uniform magnetic field, taking into account the effect of phase change at the liquid–vapor interface. Analysis of the linear stability of the molten layer shows that the optimum cutting speed can be increased through use of the magnetic field. Nonlinear stability analysis further shows that supercritical stability and subcritical instability exist in the laser cutting system with or without magnetic effect. In a magnetic field, the equilibrium amplitude of high cutting speeds decreases, and the minimum threshold amplitude increases at low cutting speeds. The effect of the magnetic field, measured by the Hartmann number (m) is to stabilize the flow regardless of the cutting speed value or gas velocity. An appropriate applied magnetic field improves the laser cutting process and counteracts surface roughness. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366109
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  • 19
    Electronic Resource
    Electronic Resource
    Crystalline silicon carbon nitride: A wide band gap semiconductor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using H2, CH4, N2, and SiH4 gases. The ternary compound (C;Si)xNy exhibits a hexagonal structure and consists of a network wherein the Si and C are substitutional elements. While the N content of the compound is about 35–40 at. %, the extent of Si substitution varies and can be as low as 10 at. %. Optical properties of the SiCN compounds have been studied by photoluminescence (PL), piezoreflectance (PzR), and photothermal deflection (PDS) spectroscopies. From the PzR measurement, we determine the direct band gap of the new crystals to be around 3.8 eV at room temperature. PDS measurement shows two absorption features with the first peak at around 3.2 eV which is related to an indirect band gap. The second PDS peak occurred around 3.8 eV and is quite consistent with the direct band gap determined by PzR. From the PL measurement, it is also found that the SiCN compounds have a near band edge emission centered around 3.26 eV at room temperature, which is consistent with the fundamental band gap obtained from the PDS measurement. These optical results indicate the potential of SiCN for blue and uv optoelectronic applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121383
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  • 20
    Electronic Resource
    Electronic Resource
    Hydrogen annealing of PtSi-Si Schottky barrier contacts (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1111-1113 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky barrier PtSi-Si diodes formed by ultrahigh vacuum deposition and annealing of 1-nm-thick Pt films on n- and p-type (100) Si substrates were characterized by current-voltage measurements at liquid-nitrogen temperature. The diodes exhibited nearly ideal characteristics, with barrier heights of 0.914 and 0.197 eV, respectively, for typical n- and p-type devices. Subsequent annealing in hydrogen increased the barrier height by 0.013 eV for the n-type devices and decreased it by the same amount for the p-type devices. Vacuum annealing of H2-annealed devices restored the barrier heights to approximately their initial values. These results can be attributed to the presence of Si interface defects that are passivated by hydrogen incorporation and subsequently reactivated by vacuum annealing to remove the hydrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103507
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