Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 1152-1160
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337360
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