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  • 1
    Electronic Resource
    Electronic Resource
    The use of a biomolecular target for crystalline carbon nitride film deposition by Ar ion-beam sputtering without any other source of nitrogen (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3449-3451 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride films have been synthesized by argon ion-beam sputtering from a biomolecular compound target, 8-aza-6-aminopurine (C4N6H4). The compound has a six-membered ring structure similar to that existing in the hypothetical β-C3N4. Except for the target material, no other source of nitrogen was used during sputtering deposition. It was found that crystalline carbon nitride with high N/C atomic composition ratios of 0.43–0.56 can be formed even at room temperature. The infrared spectra of the film exhibit two peaks at 1383 and 1643 cm−1, corresponding to C–N and C(Double Bond)N stretching modes, respectively. No detectable peak at 2200 cm−1 (C(Triple Bond)N stretching mode) is observed. Both x-ray diffraction and transmission electron microscopy show a very strong broad peak at 3.2 Å, comparable to the d spacing of the (110) orientation in the β-C3N4 structure. However, it is suggested that the film contains a nanocrystalline phase with a crystal structure yet to be determined. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121662
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "The number of third-order elastic constants of an icosahedral solid'' [J. Appl. Phys. 60, 2638 (1986)] (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2001-2001 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358540
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  • 3
    Electronic Resource
    Electronic Resource
    Analysis of calorimetric measurements of grain growth (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 679-688 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for extracting the parameters describing the process of grain growth from calorimetric data is presented. Both isothermal and scanning experiments are considered. It is demonstrated that the Kissinger method used for determining the activation enthalpy of a nucleation-and-growth process can be used for a grain growth process as well. Characteristic differences between the signals, both scanning and isothermal, from nucleation-and-growth and grain growth are pointed out. These are useful for distinguishing truly amorphous structures from microcrystalline ones by their transformation behavior. As an example, the method is applied to a study of grain growth in microquasicrystalline Al-Mn thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347349
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of highly transparent nanocrystalline diamond films and a spectroscopic study of the growth (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 753-759 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of nanocrystalline diamond films with grain size ranged from 4 nm to a few hundreds of nanometers were grown by microwave plasma enhanced chemical vapor deposition. Effects of the substrate pretreatment and the methane fraction in the source gas on the microstructure, surface roughness, and optical transmittance of the resultant films were studied. Specifically, comparison was made between two different sizes, 4 nm and 0.1 μm, of the diamond powder used for substrate pretreatment. Interestingly, the films grown on substrates scratched with coarser powder (0.1 μm) can be smoother and more transparent than those on substrates scratched with finer powder (4 nm), despite of the similarity in the grain size of these two types of films prepared at high methane fractions. It is also demonstrated that the major factor that controls the optical transparency is the surface roughness irrespective of the grain size as long as the sp2-bonded carbon in the film is avoided. In situ optical emission spectroscopy was employed to monitor the plasma chemistry, from which possible growth species for the films were discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1327608
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferromagnetic Ni2MnGa on GaAs(001) using NiGa interlayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 7357-7359 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Heusler alloy Ni2MnGa thin films have been grown pseudomorphically on a relaxed NiGa interlayer on GaAs(001) by molecular-beam epitaxy. In situ reflection high-energy electron diffraction patterns, ex situ x-ray diffraction, and cross-sectional view transmission electron microscopy electron diffraction patterns confirm the single-crystal growth of Ni2MnGa. The films grow pseudomorphically on the relaxed NiGa interlayer with a tetragonal structure (a=b=5.79 Å and c=6.07 Å). Magnetic measurements using vibrating sample and superconducting quantum interference device magnetometers reveal Ni2MnGa to have an in-plane easy axis and a Curie temperature ∼350 K. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326461
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  • 6
    Electronic Resource
    Electronic Resource
    The number of third-order elastic constants of an icosahedral solid (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2638-2638 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An icosahedral solid has 20 nonzero third-order elastic constants, four of which are independent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337086
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  • 7
    Electronic Resource
    Electronic Resource
    Selective-area growth of indium nitride nanowires on gold-patterned Si(100) substrates (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 22-24 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the synthesis of indium nitride (InN) nanowires on gold-patterned silicon substrates in a controlled manner using a method involving thermal evaporation of pure indium. The locations of these InN nanowires were controlled by depositing gold in desired areas on the substrates. Scanning electron microscopy and transmission electron microscopy investigations showed that the InN nanowires are single crystals with diameters ranging from 40 to 80 nm, and lengths up to 5 μm. Energy dispersive x-ray spectrometry showed that the ends of the nanowires are composed primarily of Au, and the rest of the nanowires were InN with no detectable Au incorporations. The Raman spectra showed peaks at 445, 489, and 579 cm−1, which are attributed to the A1(transverse optical), E2, and A1(longitudinal optical) phonon modes of the wurtzite InN structure, respectively. Photoluminescence spectra of the InN nanowires showed a strong broad emission peak at 1.85 eV. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490636
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  • 8
    Electronic Resource
    Electronic Resource
    Thermal diffusivity in amorphous silicon carbon nitride thin films by the traveling wave technique (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 332-334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal diffusivity (α) of amorphous silicon carbon nitride (a-SiCxNy) thin films on crystalline silicon, prepared by ion beam sputtering, has been studied using the traveling wave technique. The variation of thermal diffusivity with carbon content in amorphous silicon carbon nitride samples are reported. Thermal diffusivity decreased from ∼0.35 cm2/s for samples with carbon contents of less than 30 at. %, to about 0.15 cm2/s for a-SiCxNy films with a carbon content of ∼70 at. %. A similar variation was found for the film density as measured by surface acoustic wave spectroscopy as a function of the carbon content. The results on a-SiCxNy, elucidate the relation between thermal diffusivity and the bonding configuration, density and microstructure of the network. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1386619
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth of ferromagnetic single crystal (001) Ni2MnGa on (001) GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1443-1445 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ferromagnetic shape memory alloy Ni2MnGa has been grown on GaAs by molecular beam epitaxy. In situ reflection high energy electron diffraction, ex situ x-ray diffraction, and transmission electron microscopy selective area electron diffraction indicate the single crystal growth of a pseudomorphic tetragonal phase of Ni2MnGa on (001) GaAs. Both vibrating sample magnetometry and superconducting quantum interference device magnetometry measurements show that the Ni2MnGa film is ferromagnetic with in-plane magnetization and has a Curie temperature of ∼320 K. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125009
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  • 10
    Electronic Resource
    Electronic Resource
    Crystalline silicon carbon nitride: A wide band gap semiconductor (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2463-2465 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using H2, CH4, N2, and SiH4 gases. The ternary compound (C;Si)xNy exhibits a hexagonal structure and consists of a network wherein the Si and C are substitutional elements. While the N content of the compound is about 35–40 at. %, the extent of Si substitution varies and can be as low as 10 at. %. Optical properties of the SiCN compounds have been studied by photoluminescence (PL), piezoreflectance (PzR), and photothermal deflection (PDS) spectroscopies. From the PzR measurement, we determine the direct band gap of the new crystals to be around 3.8 eV at room temperature. PDS measurement shows two absorption features with the first peak at around 3.2 eV which is related to an indirect band gap. The second PDS peak occurred around 3.8 eV and is quite consistent with the direct band gap determined by PzR. From the PL measurement, it is also found that the SiCN compounds have a near band edge emission centered around 3.26 eV at room temperature, which is consistent with the fundamental band gap obtained from the PDS measurement. These optical results indicate the potential of SiCN for blue and uv optoelectronic applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121383
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