ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new organometallic source, tritertiarybutylaluminum (TTBAl), has been used in growth of AlxGa1−xSb epilayers by low pressure organometallic vapor phase epitaxy. Ternary alloys were grown over the whole composition range 0〈x≤1 on GaSb and GaAs substrates from TTBAl, triethylgallium, and triethylantimony (TESb) or trimethylantimony (TMSb). All layers exhibited mirror surface morphologies. Photoluminescence was observed for layers with x〈0.2, the composition that corresponds to the indirect transition. The background of C and O in AlSb grown with TESb was ∼2×1018 and ∼6×1019 cm−3, respectively, and ∼1.5×1019 and ∼1.5×1019 cm−3, respectively, for AlSb grown with TMSb. All layers exhibited p-type conductivity with hole concentration increasing with x, and saturating ∼5×1018 cm−3 for x=1, which is about 10 times lower compared to layers grown with conventional Al sources. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115541
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