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Selective tungsten silicide formation by ion-beam mixing and rapid thermal annealing (1985)

Tsaur, B-Y. ; Chen, C. K. ; Anderson, C. H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 57 (1985), S. 1890-1894

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Smooth layers of tungsten silicide have been formed on silicon substrates by deposition of a tungsten film, As+ ion implantation through the film to produce ion-beam mixing, and rapid thermal annealing. This process has been used to form tungsten silicide selectively in patterned openings etched in the SiO2 film on oxidized Si wafers, without lateral silicide growth. Rapid thermal annealing results in the activation of the As implanted in the Si substrate, without significant redistribution, to form shallow n+-p junctions with good electrical properties.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.334421

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