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  • 1
    Electronic Resource
    Electronic Resource
    Molecular Beam Epitaxy and Low-Dimensional Structures (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 276-277 (Mar. 1998), p. 207-222 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.276-277.207.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Carrier recombination dynamics in self-ordered InAs quantum dots (1995)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1371-1375 
    Details
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; III–V compounds and systems ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457212
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  • 3
    Electronic Resource
    Electronic Resource
    Optical study of strained and relaxed epitaxial InxGa1−xAs on GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6745-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoreflectance (PR) at different temperatures and spectroellipsometry (SE) at room temperature were used to study, in a systematic and complementary way, the optical response of a series of strained and relaxed InxGa1−xAs (x〈0.15) epilayers. All the samples were grown by molecular-beam epitaxy on GaAs, both with and without a GaAs cap layer, which in the thinnest samples determines a single-quantum-well configuration. The effects of the strain on the optical structures E0, E1, and E1+Δ1 observed in the 1.2–3.3 eV photon-energy range were analyzed by fitting standard critical points (CP) line shapes to the PR and SE spectra. The CP experimental energies versus x were compared with the relations obtained in the framework of the elastic strain theory and, in the quantum-well structures, of the envelope-function scheme. The excellent agreement between experiment and theory allowed us to determine, independently and only by optical techniques, the strain ε and the composition x values, which compare well with those measured by x-ray diffraction. Additional information concerning the critical thickness for the pseudomorphic growth and the residual strain in quasirelaxed layers was achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360498
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of aluminum concentration in the Ga1−xAlxSb/GaSb epitaxial system (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1298-1305 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The composition of several Ga1−xAlxSb epitaxial layers of different thicknesses grown by molecular beam epitaxy on GaSb with x ranging between 0.1 and 0.8, has been obtained independently by high resolution x-ray diffraction, Rutherford backscattering spectrometry, and reflection high-energy electron diffraction. From the comparison between the results obtained by the different experimental methods, it has been possible to point out that the lattice constant of the layer increases nonlinearly with the Al content. A comparison with theoretical models has been done. A phenomenological equation has been derived for a correct analysis of the x-ray results. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370885
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  • 5
    Electronic Resource
    Electronic Resource
    Minority carrier capture at DX centers in AlGaSb Schottky diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5337-5341 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hole capture at DX centers is evidenced in Schottky diodes made on Te-doped AlGaSb under forward bias conditions. Capacitance versus voltage measurements performed at low temperatures show that the occupancy of the DX centers is affected by sufficiently large forward biases. The current densities required to achieve such modifications are at least one order of magnitude smaller than those needed in Si-doped AlGaAs. Positive deep level transient spectroscopy signals are systematically detected in all the samples studied when forward-bias filling pulses are used. These observations are discussed in terms of minority carrier (hole) injection and subsequent capture by the DX centers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368783
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  • 6
    Electronic Resource
    Electronic Resource
    Deep levels in virtually unstrained InGaAs layers deposited on GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2965-2967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dislocation-related deep levels in InxGa1−xAs layers grown by molecular beam epitaxy on GaAs substrates have been investigated. Virtually unstrained InGaAs layers with mole fraction x of 0.10, 0.20, and 0.30 have been obtained by properly designing the In composition of linearly graded InxGa1−xAs buffers. Two electron traps, labeled as E2 and E3, whose activation energy scales well with the energy gap, have been found. Unlike E2, E3 shows: (i) a logarithmic dependence of the deep level transient spectroscopy amplitude on the filling pulse width and (ii) an increase of concentration as the buffer/InGaAs interface is approached. These findings, together with the observation that, in compressively strained In0.2Ga0.8As, the E3-related concentration is definitely higher than that of virtually unstrained In0.2Ga0.8As, indicate that this trap is likely originated by extended defects like threading dislocations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368404
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  • 7
    Electronic Resource
    Electronic Resource
    Lattice strain relaxation study in the Ga1−xAlxSb/GaSb system by high resolution x-ray diffraction (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1549-1551 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lattice strain relaxation has been studied in the Ga1−xAlxSb/GaSb system by analyzing layers with thicknesses ranging between 0.1 and 6 μm and with Al concentration x=0.4. The samples have been grown by molecular beam epitaxy at 550 °C on (001) oriented undoped GaSb substrates. The heterostructures were investigated by a high resolution x-ray diffraction method. The experimental critical thickness for the strain relaxation has been found to be tc(approximate) 310 nm. The measured residual strain εres shows a t−0.47 dependence on the layer thickness t. This result is in agreement with the theoretical predictions based on the energy balance model, and cannot be described in the frame of the equilibrium theories which yield εres∝t−1. The values of εres have been corrected by the so-called thermal misfit (ΔT) for epitaxial systems with different thermal expansion coefficients. For the Ga0.6Al0.4Sb/GaSb epitaxial system grown at TG=550 °C, the value ΔT=−3.28×10−4 has been calculated from the literature data.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119962
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  • 8
    Electronic Resource
    Electronic Resource
    Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3354-3356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence (10–180 K) of the photoluminescence (PL) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20–30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117304
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  • 9
    Electronic Resource
    Electronic Resource
    Study of the lattice strain relaxation in the Ga1-X Al X Sb/GaSb system by x-ray topography and high resolution diffraction (1999)
    Springer
    Journal of materials science 10 (1999), S. 185-190 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract High resolution x-ray diffraction and topographic methods have been used to study lattice strain relaxation in the Ga1-X Al X Sb/GaSb system. Samples with layer thickness ranging between 0.1 and 6 μm and with Al concentration x=0.402±0.005 have been grown by molecular beam epitaxy at 550 °C on (0 0 1) oriented undoped GaSb LEC substrates. A first critical thickness (t C1), related to the misfit dislocation generation, has been found to be between 0.16 〈 t C1 〈 0.20 μm. Due to the weak sensitivity of the rocking curve to the onset of relaxation, this result has been obtained by means of a double crystal topographic technique. A “plateau” region in the curve of the residual strain versus thickness has been observed for t ranging between 0.2 and 0.5 μm. The residual strain ɛres shows a dependence close to t–0.5 above a second critical thickness value t C2 slightly larger than 0.5 μm. Finally, in the last region above a layer thickness of 3 μm, strong dislocation interaction effects seem to affect the relaxation. A comparison with theoretical models has been made.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008987710885
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  • 10
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    Occupancy level of the DX center in Te-doped AlxGa1−xSb (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-01-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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