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Carrier recombination dynamics in self-ordered InAs quantum dots

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Il Nuovo Cimento D

Summary

A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.

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Authors and Affiliations

  1. Dipartimento di Fisica, Unità INFM and LENS, Largo E. Fermi 2, 50125, Firenze, Italy

    F. Bogani, L. Carraresi, R. Mattolini & M. Colocci

  2. CNR-MASPEC, Via Chiavari 18/A, 43100, Parma, Italy

    A. Bosacchi & S. Franchi

Authors
  1. F. Bogani
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  2. L. Carraresi
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  3. R. Mattolini
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  4. M. Colocci
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  5. A. Bosacchi
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  6. S. Franchi
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Bogani, F., Carraresi, L., Mattolini, R. et al. Carrier recombination dynamics in self-ordered InAs quantum dots. Il Nuovo Cimento D 17, 1371–1375 (1995). https://doi.org/10.1007/BF02457212

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  • DOI: https://doi.org/10.1007/BF02457212

PACS 78.66.Fd

PACS 78.55.Cr

PACS 73.20.Dx

PACS 01.30.Cc

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