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  • 1
    Electronic Resource
    Electronic Resource
    Photoelectronic properties of the Zn x Cd1−x In2S4 system (1983)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 2 (1983), S. 2007-2012 
    Details
    ISSN: 0392-6737
    Keywords: Photoconduction and photovoltaic effects ; photodielectric effects
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono state studiate le proprietà fotoelettroniche di monocristalli lamellari appartenenti al sistema Zn x Cd1−x In2S4 investigando in particolare fenomeni di elevata conducibilità residua e tempi lunghi di rilasammento.
    Abstract: Резюме Проводятся фотоэлектрическне исследования системы Zn x Cd1−x In2S4. Особое внимание уделяется остаточной проводимости и свойствам времени медленной релаксации.
    Notes: Summary Photoelectrical investigations on the Zn x Cd1−x In2S4 system have been carried our particularly with respect to the high residual conductivity and the long-relaxation-time properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02457902
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  • 2
    Electronic Resource
    Electronic Resource
    Study of the layered phases in the Cd(In"xGa"1"-"x)"2S"4 system
    Amsterdam : Elsevier
    Progress In Crystal Growth And Characterization 10 (1984), S. 353-360 
    Details
    ISSN: 0146-3535
    Keywords: Layered structures ; Raman spectroscopy ; mixed crystals ; semiconductors ; ternary compounds
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0146-3535(84)90055-8
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  • 3
    Electronic Resource
    Electronic Resource
    Influence of the cation mixing on the photoelectronic properties of the Zn"xCd"1"-"xIn"2S"4 (III) layered compounds
    Amsterdam : Elsevier
    Progress In Crystal Growth And Characterization 10 (1984), S. 329-336 
    Details
    ISSN: 0146-3535
    Keywords: Layered materials ; pseudoternary alloys ; transport properties, photoelectronic properties
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0146-3535(84)90052-2
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  • 4
    Electronic Resource
    Electronic Resource
    Photovoltage and photocurrent spectroscopy of p+-i-n+ GaAs/AlGaAs quantum well heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3578-3583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoelectric properties of p+-i-n+ heterostructures that contain a GaAs/AlGaAs superlattice, grown by molecular beam epitaxy, have been investigated. The nominally undoped multi-quantum-well region was excited by photons whose energies were varied within the spectral region of valence-to-conduction subband transitions. The dark- and light-induced perpendicular transport was examined. The intense spectral features observed by photovoltage (PV) and photocurrent (PC) measurements were ascribed to excitonic transitions between the heavy and light hole electron states; their energetic location and line shape (half width at half peak and integrated area) were carefully studied in the temperature interval 10–300 K. The excitonic nature of the spectral peaks showing a conspicuous red shift under a reverse bias (Stark shift) were confirmed by electroreflectance measurements. The full analogy and the origin of the two (PV and PC) photoresponse signals are clearly proved. The spectral features can be explained by the absorption properties of the quantum wells, while the variation of the peak integrated area as a function of the temperature is dominated by the particular transport mechanism. The integrated area of the peaks shows a minimum at about 100 K which seems to be due to the occurrence of two different tunneling mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352317
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  • 5
    Electronic Resource
    Electronic Resource
    Occupancy level of the DX center in Te-doped AlxGa1−xSb (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 256-263 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall effect measurements were performed in Te-doped AlxGa1−xSb layers grown by molecular beam epitaxy to investigate the composition dependence of the DX center occupancy level. The investigated samples have AlSb molar fractions in the 0.25≤x≤0.50 range and n-type doping of about 1018 cm−3. A family of x(approximate)0.40 samples of different doping (5×1015–1018 cm−3) were also studied. The Hall electron density data versus temperature were analyzed at high temperatures (T≥150 K) where the DX center is at equilibrium, by assuming the negative-U model for the DX level and by taking into account the multivalley conduction effects. The DX level, degenerate in energy with the conduction band at low x values, enters the forbidden gap at x(approximate)0.25 and then it becomes deeper with increasing x. In lightly doped samples, the introduction of a second level of the same Te impurity is required to fit the data; such level can be identified with the nonmetastable level which controls the low temperature electrical properties of the material. A critical discussion on the choice of the conduction band parameters for the fitting is reported. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369438
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  • 6
    Electronic Resource
    Electronic Resource
    Photoionization cross-section of the DX center in Te-doped AlxGa1−xSb (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 491-496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoionization of DX centers in Te-doped AlxGa1−xSb layers grown by molecular beam epitaxy is investigated by measuring the increase of the Hall free electron density after illumination by monochromatic light in the temperature range typical of the persistent photoconductivity (PPC) effect. The investigated samples have AlSb molar fractions in the 0.3≤x≤0.5 range and n-type doping in the 1017−1018 cm−3 range. An accurate investigation of the isothermal photoionization transients is performed to evidence features in the curve not directly related to the phenomenology of the DX center, the free electron density being influenced by the possible occupancy of other impurity levels. The transients show, in particular, an initial nonexponential behavior which is demonstrated as due to localization of a fraction of the photoexcited electrons into a nonmetastable impurity state which is responsible for the semiconductor-to-metal transition observed under the PPC regime. When this effect is accounted for, the dependence of the photoionization cross section of the DX center on the photon energy was obtained from the analysis of the linear part of the transients and analyzed through a model given in the literature. The analysis gives values of the optical ionization energy and of the Frank-Condon shift varying in the ranges of 0.84–0.95 and 0.70–0.74 eV, respectively, depending on the alloy composition. This confirms a large lattice relaxation for the DX center related to the Te-impurity in AlxGa1−xSb. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366720
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  • 7
    Electronic Resource
    Electronic Resource
    Photoelectric properties of GaSb Schottky diodes (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1813-1819 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and photoelectrical properties of GaSb Schottky diodes obtained by evaporating gold metal dots on sulphur treated or chemically etched surfaces of Te-doped n-GaSb crystals (grown from melt by Czochralski method), with Hall carrier density in the range of 1.8–6.5×1017 cm−3, were studied. J/V characteristics with an ideality factor ranging between 1.17 and 1.22 were measured on Schottky diodes prepared on sulphur passivated surfaces. After image force effect correction, photoelectric determination of the barrier height (qΦb=0.598±0.006 eV) has been found to be independent of the surface treatment and, in the case of the sulphur-treated diodes, in good agreement with the value obtained through C−2 vs reverse bias measurements (qΦb=0.6±0.01 eV). Through spectral response analysis of Schottky diodes, an estimation of minority carrier diffusion length value is given. A major role of sulphur passivation on preparation of Schottky barrier with good and well reproducible electrical properties is confirmed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364065
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  • 8
    Electronic Resource
    Electronic Resource
    Ionic channel gating under electromagnetic exposure: a stochastic model
    Amsterdam : Elsevier
    Bioelectrochemistry and Bioenergetics 29 (1993), S. 289-304 
    Details
    ISSN: 0302-4598
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0302-4598(93)85004-D
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  • 9
    Electronic Resource
    Electronic Resource
    Ach receptor channel's interaction with MW fields
    Amsterdam : Elsevier
    Bioelectrochemistry and Bioenergetics 30 (1993), S. 275-285 
    Details
    ISSN: 0302-4598
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0302-4598(93)80086-A
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  • 10
    Electronic Resource
    Electronic Resource
    Evaluation of fractal properties of ACh-receptor channel's gating exposed to microwave fields
    Amsterdam : Elsevier
    Bioelectrochemistry and Bioenergetics 35 (1994), S. 81-85 
    Details
    ISSN: 0302-4598
    Keywords: ACh-receptor channel's ; Fractal properties ; Microwave fields
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0302-4598(94)87015-2
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