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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1487-1492 
    ISSN: 0392-6737
    Keywords: III-V semiconductors ; Electron states in low-dimensional structures (including, quantum wells, superlattices, layer structures, and intercalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; Brillouin and Rayleigh scattering ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A detailed study of the relative role played by localized and/or propagating intermediate excitonic states in, resonant Rayleigh scattering (RRS) is presented for a large set of GaAs quantum well (QW) and bulk structures. We show that the two kinds of states contribute to RRS through different mechanisms. We concluded that RRS occurs via localized states in QW heterostructures, very likely due to localization by the interface roughness, while bulk, crystals turn out to be better candidates for RRS via propagating states.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1383-1387 
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Excitons and related phenomena (including electron-hole drops) ; III–V compounds and systems ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 17 (1995), S. 1371-1375 
    ISSN: 0392-6737
    Keywords: III–V semiconductors ; III–V compounds and systems ; Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds) ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary A photoluminescence study of self-ordered InAs quantum dots grown by molecular beam epitaxy on a GaAs substrate is reported. Short pulses and high excitations have been used in order to observe emission from higher states of the quantum dots. The energy spacing between adjacent transitions seems to be of the order of 40–50 meV for dot diameters around 20 nm. The photoluminescence decay time from the ground state is of the order of 650–700 ps and decreases down to roughly 100 ps for the highest confined states. A cascade-like mechanism for the carrier relaxation in these structures is strongly suggested by the time-resolved data.
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 9 (1987), S. 999-1007 
    ISSN: 0392-6737
    Keywords: Photoluminescence ; Conductivity phenomena in semiconductors and insulators
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta uno studio dettagliato della luminescenza risolta nel tempo dello ZnIn2S4 eccitato con un laser pulsato a 30 K. Si riportano i risultati sperimentali ottenuti sulla dipendenza dell’intensità di fotoluminescenza a diverse lunghezze d’onda dall’intensità di eccitazione; gli spettri risolti nel tempo nell’intervallo (0÷10−1)s di ritardo rispetto all’eccitazione e, infine, il decadimento dell’intensità di fotoluminescenza. I risultati sono discussi nell’ambito di un semplice modello per i processi di ricombinazione a bassa temperatura, che fornisce un buon accordo con i dati sperimentali.
    Notes: Summary A detailed study of the time-resolved luminescence of ZnIn2S4 after pulsed-laser excitation at 30 K is presented. Results are given on the dependence of the emitted PL intensity at different emission wavelengths on the excitation intensity, on the time-resolved spectra in the range (0÷10−1) s of delay time with respect to excitation and on the time decay of the luminescence intensity for different emission wavelengths. The results are discussed in the framework of a simple model for the recombination processes at low temperatures yielding a good overall agreement with the experimental data.
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 4 (1984), S. 453-468 
    ISSN: 0392-6737
    Keywords: Infra-red and Raman spectra and scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Mescolamento non lineare di radiazioni IR e visibile, cioè diffusione Raman coerente da polaritoni generati da un laser a CO2, è stato utilizzato per ottenere la curva di dispersione e la sua larghezza nello spazio dei momentiq del polaritone associato al fonone a 1065 cm−1, di simmetriaE, in un cristallo di quarzo. Si mostra nell'articolo che è possibile ottenere, in questo modo, un metodo diretto per determinare, con grande precisione, l'indice di rifrazione e l'assorbanza di un cristallo. I risultati sono confrontati con dati sperimentali assai accurati ottenuti mediante diffusione Raman dei polaritoni in equilibrio termico; si trova un ottimo accordo tra i risultati delle due misure. Si mostra infine che tali tecniche di mescolamento non lineare sono del tutto compatibili con un semplice modello di diffusione di luce da polaritoni pompati.
    Abstract: Резюме Исполйзуется нелинейное смешивание инфракрасного и видимого излучений, т.е. когерентное романовскоие рассеяние на поляритонах, образованных CO2 лазером, для получения дисперсионной кривой и ее ширины вq-пространстве поляритонов, связанных сE-фононом при 1065 см−1, в кристаллическом кварце. В статйе показывается, что в таком полходе может быть получен прямой метод для независимого определения показателя преломления и поглощения кристалла с высокой точностью. Полученные результаты сравниваются с данными для рамановского рассеяния на поляритонах в тепловом равновесии. Получается очень хорошее согласие между двумя измерениями. Показывается, что техника нелинейного смешивания согласуется с простой картиной рассеяния света на горячих поляритонах.
    Notes: Summary Nonlinear mixing of IR and visible radiation,i.e. coherent Raman scattering by polaritons driven by a CO2 laser, has been used to obtain the dispersion curve and its width inq-space of the polariton associated to theE-phonon at 1065 cm−1 in crystal quartz. It is shown in this paper that a direct method to determine indipendently, with high precision, the refractive index and absorbance of a crystal can be obtained in this way. The results are compared with accurate data obtained from Raman scattering by polaritions in thermal equilibrium and very good agreement is found between the two measurements. It is finally shown that nonlinear-mixing techniques turn out to be completely consistent with the simple picture of scattering of light by hot polaritons.
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  • 6
    ISSN: 0392-6737
    Keywords: Photoluminescence ; Excitons and related phenomena ; Charge carriers: generation, recombination, lifetime and trapping
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Si presenta, in questo lavoro, uno studio sperimentale degli effetti delle disomogeneità spaziali e temporali nei plasmi di elettroni e lacune generati da impulsi laser potenti in strutture a buche quantiche di GaAs/AlGaAs. Si trova che tali disomogeneità modificano fortemente gli spettri di fotoluminescenza e devono quindi essere considerate per una corretta interpretazione dei dati sperimentali. La forma di riga degli spettri di luminescenza viene analizzata mediante un modello statistico che include, in modo semplice, le disomogeneità spaziali e temporali degli impulsi laser usati per l’eccitazione. Si ottiene un accordo soddisfacente con i dati sperimentali e si trova che i valori dei parametri ottenuti dal fit dipendono in modo sensibile dal modello assunto per la descrizione delle disomogeneità. Grande cautela deve essere quindi usata nel dedurre le proprietà del plasma fotogenerato a partire da una analisi delle forme di riga.
    Notes: Summary The effects on the luminescence lineshape of the spatial and temporal inhomogeneities of the electron-hole plasma generated by strong laser pulses in GaAs/AlGaAs multiple quantum well structures are experimentally investigated. It is found that inhomogeneities strongly affect the luminescence spectra and must be taken into account for a correct interpretation of the experimental data. The lineshape of the luminescence spectra is analysed using a statistical model that includes, in a simple way, the spatial and temporal inhomogeneities of the laser pulses used for excitation. A fair agreement is obtained with the experimental data; at the same time the values of the fit parameters turn out to be rather sensitive to the model assumed for describing the inhomogeneities. Therefore, caution has to be used when inferring plasma properties, such as the carrier density and temperature, from a lineshape analysis.
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  • 7
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 170 (1991), S. 561-565 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3011-3016 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large set of InGaAs/GaAs quantum well structures was investigated by means of continuous wave photoluminescence (PL) and photoluminescence excitation spectroscopy. Strong photomodulation effects are observed in PL, namely, a strong sensitivity to the excitation energy and strong changes in the line shape when resonant and nonresonant excitations are used together. Correspondingly, the exciton emission exhibits a doublet structure and the excitation spectra, as detected by monitoring the emission at the two peak energies of the PL doublet, show quite different profiles, with peaks and/or dips not directly related to absorption resonances. On the grounds of time-resolved experiments it is shown that band-bending modifications, due to trapping of free carriers at interface defects, account for the observed photomodulation. © 1996 American Institute of Physics.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling mechanism of electrons and holes to surface states from near-surface Al0.3Ga0.7As/GaAs quantum wells has been investigated by steady-state and time-resolved photoluminescence spectroscopy, near liquid-helium temperature, of the excitonic e1-hh1 transition in the well. The ensemble of the data, taken over a wide range of optical excitation levels, for various values of the tunneling-barrier thickness, and before and after passivation of the surface by hydrogen, allows a description both of the details of the tunneling mechanism and of the character and behavior of relevant surface states. The main results are summarized as follows: (i) steady-state tunneling is ambipolar, namely, separate for electrons and holes, rather than excitonic; (ii) Spicer's advanced unified defect model for an oxidized GaAs surface, antisite-As donors as dominating surface traps, provides an appropriate description of the state distribution at the interface between AlGaAs and its oxide; (iii) hole accumulation in surface states, resulting from the nominally different unipolar tunneling probability for the two carriers (and increasing with excitation level), generates a dipole electric field across the tunneling barrier, extending into the well; (iv) hydrogenation efficiently passivates electron trapping in surface states, but not hole tunneling and the consequent generation of a surface field by illumination; (v) the experimental findings agree with a model for ambipolar tunneling based on a self-consistent quantum-mechanical approach.
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