Summary
We report an experimental study on a large set of InGaAs/GaAs quantum well structures by means of continuous-wave photoluminescence and photoluminescence excitation. The luminescence spectrum at low temperature systematically exhibits a doublet structure whose lineshape is very sensitive to the excitation energy. Accordingly, the excitation spectra detected by monitoring the emission at the two different luminescence peaks have very different profiles, with peaks and/or dips which are not directly related to absorption resonances. As a matter of fact, the anomalies disappear when increasing the temperature or when using an optical bias with energy above the GaAs energy gap. In these cases, the excitation profiles recover the behaviour typical of 2D systems.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Marzin J.-Y., Gerard J.-M., Voisin P. andBrum J. A. inSemiconductors and Semimetals, edited byT. P. Pearsall, Vol.32 (Academic Press, Boston) 1990, p. 55.
Muraki K., Fukatsu S., Shiraki Y. andIto R.,Appl. Phys. Lett.,61 (1992) 557.
Here and in the following the term free exciton labelling an excitonic transition observed in PL refers to the fact that the transition involves the fundamental exciton ground state. It is not related, instead, to a propagating character of the excitonic state in the sense discussed,e.g., byStolz H.,Time-resolved Light Scattering from Excitons, Vol.130 (Springer-Verlag, Berlin, Heidelberg) 1994, p. 169.
Patanè A., Polimeni A., Capizzi M. andMartelli F.,Phys. Rev. B,52 (1995) 2784.
Shen H., Dutta M., Lux R., Buchwald W. andFotiadis L.,Appl. Phys. Lett.,59 (1991) 321.
Weegels L. M., Haverkort J. E. M., Leys M. R. andWolter J. H.,Phys. Rev. B,46 (1992) 3886.
Marzin J.-Y., Charasse M. N. andSermage B.,Phys. Rev. B,31 (1985) 8298.
Reithmaier J. P., Hoger R., Riechert H., Hiergeist P. andAbstreiter G.,Appl. Phys. Lett.,57 (1990) 957.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Borri, P., Gurioli, M., Colocci, M. et al. Excitation energy dependence of the optical properties of InGaAs/GaAs quantum well heterostructures. Il Nuovo Cimento D 17, 1383–1387 (1995). https://doi.org/10.1007/BF02457214
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02457214