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  • 1
    Electronic Resource
    Electronic Resource
    Polymorphisms in IgG Fc receptor IIB regulatory regions associated with autoimmune susceptibility (2000)
    Springer
    Immunogenetics 51 (2000), S. 429-435 
    Details
    ISSN: 1432-1211
    Keywords: Key words Polymorphism ; FcγRIIB1 ; Systemic lupus erythematosus ; Germinal-center B cells ; Hyper-IgG
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract  Autoimmune diseases involve multiple genes. While functions of these genes are largely unknown, some may be related to an intrinsic hyperresponsiveness of B cells. B-cell responses are controlled by signaling thresholds through the B-cell antigen receptor (BCR) complex. The B1 isoform of type II IgG Fc receptors (FcγRIIB1) is exclusively expressed on B cells and serves as a negative regulator for inhibiting BCR-elicited activation. Thus, its allelic variants associated with functional deficits could be examined for possible associations with susceptibility to autoimmune diseases. We found that there are three types of polymorphisms in the reported FcγRIIB transcription regulatory regions in mouse strains. Compared to normal healthy mouse strains (group III), autoimmune disease-prone strains (group I) share three deletion sites: two in the promoter region and one in the third intron. Strains (group II) that per se are not autoimmune-prone, but have potentials to accelerate autoimmune diseases share two deletion sites in the third intron: one identical to that in group I and the other unique to group II. These polymorphisms correlated well with extents of down-regulation of FcγRIIB1 expression in germinal-center B cells upon stimulation with antigens and up-regulation of IgG antibody responses. Our data imply that these FcγRIIB polymorphisms are selected evolutionarily for natural defense against pathogens, and that such polymorphisms may, in turn, form the basis of one aspect of autoimmune susceptibility.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002510050641
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  • 2
    Electronic Resource
    Electronic Resource
    Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 356-358 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense ultraviolet photoluminescence centered at 370 nm was observed from magnetron-sputtered silicon oxide films after they were annealed at about 1000 °C in N2 atmosphere. This photoluminescence is found to be associated with the formation of nanocrystal silicon particles in the specially structured SiO2, which highly resembles the oxide layer of porous silicon. The luminescence centers at the interface between the nanocrystal silicon particles and the SiO2 matrix are responsible for the strong ultraviolet luminescence. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120735
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  • 3
    Electronic Resource
    Electronic Resource
    Inflow conditions for large-eddy simulations of mixing layers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 12 (2000), S. 935-938 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to generate inflow boundary conditions for large-eddy simulations (LES) of turbulent free shear layers is presented. A time series of instantaneous velocity planes, with duration approximately equal to the integral time scale of the flow, is extracted from a periodic simulation and saved on disk. This signal is transformed into a periodic one, by using a conventional windowing technique, and is re-used in the actual simulation as many times as required to obtain converged statistics. The method is applied in a LES of a spatially developing turbulent mixing layer. It is shown that the periodicity induced by the inflow signal decays rapidly in about 25% of the domain, and that the length of the period has small effect on the statistics, which agree well with the reference experimental data. The method appears to be a cost-effective strategy in the generation of inflow data in a large variety of flows. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.870346
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  • 4
    Electronic Resource
    Electronic Resource
    Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1051-1053 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report organometallic vapor-phase epitaxy (OMVPE) growth and optical characteristics of 1.17–1.20 μm double-heterostructure laser diodes with three Ga0.7In0.3N0.003As0.997 (7 nm)/GaAs(10 nm) quantum wells (GaInNAs/GaAs QWs). Three GaInNAs/GaAs QWs were successfully grown by OMVPE using dimethylhydrazine as the N precursor. Strong room-temperature photoluminescence at the 1.17–1.19 μm regime with a full width at half maximum of 33 meV has been routinely achieved. By using three GaInNAs/GaAs QWs as the gain medium of the GaInNAs laser, room temperature operation with a threshold current density of 1.2 kA/cm2 has been successfully demonstrated. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124593
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  • 5
    Electronic Resource
    Electronic Resource
    Planar semiconductor lasers using the photoelastic effect (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7442-7447 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Planar separate-confinement, double-heterostructure, single-quantum-well photoelastic GaAs/AlGaAs lasers have been fabricated using a novel yet practical processing technique involving thin-film surface WNi stressors for waveguiding and ion implantation for isolation. A p++-GaAs contact layer regrown by chemical beam epitaxy has been used to improve the WNi ohmic contacts to the lasers. Even without bonding on heat sinks, these planar photoelastic lasers operate at continuous wave at room temperature. The lowest threshold is 29 mA for a cavity length of 178 μm and a stressor width of 5 μm. The internal quantum efficiency above threshold is 75%. The characteristic temperature is 114 K. The main waveguiding mechanism of the photoelastic lasers is determined to be weak index guiding with the beam waist in the junction plane measured 10 μm behind the end facet. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367988
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  • 6
    Electronic Resource
    Electronic Resource
    Investigation of interface intermixing and roughening in low-temperature-grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x-ray diffraction (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3491-3493 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of thermal annealing on the interface quality in undoped, AlAs/GaAs multiple quantum well (MQW) structures grown at a low substrate temperature (310 °C) by molecular beam epitaxy has been investigated using chemical lattice imaging and high resolution x-ray diffraction. The low-temperature-grown MQW is of high crystalline quality comparable to the standard-temperature-grown MQW. However, significant interface roughening and intermixing occurs at the quantum well heterointerface when the structures are annealed beyond 700 °C. The effective activation energy for interdiffusion is estimated as 0.24±0.07 eV. The structural properties observed here suggest that the excess arsenic associated with the low-temperature growth substantially enhances the diffusion of column III vacancies across an interface, which leads directly to intermixing of Al and Ga. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115257
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  • 7
    Electronic Resource
    Electronic Resource
    In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2589-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance–voltage carrier profiles, and current–voltage (I–V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (〉20) of GaAs over AlxGa1−xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I–V characteristics of etched/regrown p-n AlxGa1−xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1−xAs.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119087
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  • 8
    Electronic Resource
    Electronic Resource
    Identification of a novel multiple environmental factor-responsive 1-aminocyclopropane-1-carboxylate synthase gene, NT-ACS2, from tobacco (2000)
    Oxford, UK : Blackwell Science Ltd
    Plant, cell & environment 23 (2000), S. 0 
    Details
    ISSN: 1365-3040
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Many abiotic environmental factors elicit the production of stress-ethylene in higher plants. To elucidate the molecular mechanisms underlying the regulation of stress-ethylene production and the physiological roles played by stress-ethylene in stress responses of plants, we studied the gene expression of ACC synthase in tobacco plants that had been subjected to environmental stresses. Four new tobacco ACC synthase cDNA fragments, NT-ACS2, NT-ACS3, NT-ACS4 and NT-ACS5, were identified and sequenced. It was found that NT-ACS2 could be induced by wounding, cold temperature and, especially, sunlight. NT-ACS4 was induced at a faster kinetics by wounding. The multiple environmental stress-responsive (MESR) NT-ACS2 gene was found to contain three introns and four exons and encode a polypeptide of 484 amino acids, 54·6 kDa and pI 6·87. Computer analysis of the 3·4 kb 5′ flanking region upstream of the ACS coding region revealed the existence of a group of putative cis-acting regulatory elements potentially conferring wounding, chilling, and UV light inducibility. Phylogenetic analysis of ACC synthase genes of different plant origins indicated that the chill-inducible NT-ACS2 gene is closely related to a chilling-inducible citrus ACS gene.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-3040.2000.00618.x
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  • 9
    Electronic Resource
    Electronic Resource
    Effect of interface layer on fatigue crack growth in an aluminium laminate (2004)
    PO Box 1354, 9600 Garsington Road, Oxford OX4 2XG, UK. : Blackwell Science Ltd
    Fatigue & fracture of engineering materials & structures 27 (2004), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In order to study the effect of an interface layer on fatigue crack growth, a thin pure Al layer was sandwiched between two LY12 plates using explosive bonding. Experiment shows that as a fatigue crack approaches the interface a remote plastic zone appears in the soft Al layer. Energy dissipation in the interface leads to significant deceleration of crack growth rate. FEM analysis shows that crack arrest is associated with load and distance between the crack tip and the interface. The size of the plastic zone can be calculated and used to predict the reduction in crack growth rate. The predictions agree well with the experimental results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.2004.00662.x
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  • 10
    Electronic Resource
    Electronic Resource
    Equilin (1999)
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 425-427 
    Details
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108270198013250
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