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  • 1
    Electronic Resource
    Electronic Resource
    Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2889-2891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the interfaces of InGaAs/InGaAsP quantum wells (QWs) grown by gas-source molecular beam epitaxy. By optimizing the group-V source supply sequence, a photoluminescence (PL) linewidth as narrow as 6.6 meV has been observed from a 2 nm wide single QW. The PL linewidths have been analyzed to evaluate the contributions of alloy compositional scattering and interface roughness. The analysis shows that for QW structures grown with the optimized growth sequence, the PL linewidth is mainly due to alloy compositional variations, whereas the contribution from interface roughness is small, indicating a good interface control. By considering the strain effect on the band alignment of the InGaAs/InGaAsP heterojunction, theoretical transition energies of QWs have been calculated using the envelope-function approximation, and the results agree well with the experimental data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360032
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  • 2
    Electronic Resource
    Electronic Resource
    N incorporation in InP and band gap bowing of InNxP1−x (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1934-1936 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The N incorporation behavior in InP grown by gas-source molecular beam epitaxy using a N radical beam source has been investigated. At a given growth temperature, the N composition in InNxP1−x is generally different from the N2 flow-rate fraction in the vapor phase, and as the N2 flow-rate fraction increases, it saturates after increasing to a certain point. This may be due to the small solubility of N in InP. Increasing the growth temperature will result in a loss of N incorporation into the InP as a result of the faster desorption of the N at high temperatures. Optical absorption measurements reveal that the band-gap energy of InNxP1−x decreases drastically, resulting in band-gap bowing. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362945
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  • 3
    Electronic Resource
    Electronic Resource
    A scanning tunneling microscopy study of atomic-scale clustering in InAsP/InP heterostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2135-2137 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used cross-sectional scanning tunneling microscopy to perform atomic-scale characterization of InAs0.35P0.65/InP strained-layer multiple-quantum-well structures grown by gas-source molecular-beam epitaxy. High-resolution (110) cross-sectional images reveal nanoscale clustering of As and P in the InAsxP1−x alloy layers. Boundaries between As-rich and P-rich regions in the alloy layers appear to be preferentially oriented along the [1¯12] and [11¯2] directions in the (110) plane, suggesting that boundaries between As-rich and P-rich clusters tend to form within {111} planes in the lattice. The nanoscale compositional variations within the InAsxP1−x alloy layers lead to an asymmetry in interface quality in the (110) cross section, with the InAsxP1−x-on-InP interfaces being much smoother and more abrupt than the InP-on-InAsxP1−x interfaces. Analysis of (11¯0) cross-sectional images suggests that the clusters formed within the InAsxP1−x alloy are elongated along the [110] direction in the crystal. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121300
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  • 4
    Electronic Resource
    Electronic Resource
    Optical detection of quantum oscillations in InP/InGaAs quantum structures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magnetooptical method based on optical detection of quantum oscillations via photoluminescence in a magnetic field is applied for characterization of the electronic structure and recom- bination mechanisms in modulation-doped semiconductor quantum structures. By studying modulation-doped InP/InGaAs two-dimensional (2D) quantum structures as an example case, the method is shown to be capable of obtaining information on: (i) the electronic structure, filling of quantum subbands, as well as the effective mass of 2D carriers and band nonparabolicity; (ii) both equilibrium and nonequilibrium concentration of 2D carriers and the dependence of the carrier concentration and lifetime on injection level. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117899
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of enhanced photoluminescence in erbium-doped semiconductor microdisk resonator (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2843-2845 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report experimental results from an erbium-doped gallium phosphide microdisk resonator pumped by a Ti-sapphire laser at 980 nm. Fabrication and characterization of the microdisk resonator are discussed. Enhanced Er+3 intra-4f-shell photoluminescence was observed in the microdisk resonator due to microcavity effect and compared to a thin film sample. At low pumping power intensity, the photoluminescence from erbium-doped gallium phosphide microdisks is an order stronger than that from a thin film sample. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113448
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  • 6
    Electronic Resource
    Electronic Resource
    In situ selective etching of GaAs for improving (Al)GaAs interfaces using tris-dimethylaminoarsenic (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2589-2591 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance–voltage carrier profiles, and current–voltage (I–V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (〉20) of GaAs over AlxGa1−xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I–V characteristics of etched/regrown p-n AlxGa1−xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1−xAs.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119087
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  • 7
    Electronic Resource
    Electronic Resource
    High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 films have been grown by molecular beam epitaxy on pseudo-lattice-matched substrates that consist of a 1-μm-thick In0.29Ga0.71As layer grown on a linearly composition-graded InxGa1−xAs buffer (0≤x≤0.29) grown in turn on GaAs (001). The properties of these films have been compared with those of the films grown directly on GaAs (001). High resolution x-ray diffraction analysis on CuInSe2 grown on pseudo-lattice-matched substrates indicated substantial reduction on residual strain in the CuInSe2 films. A photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInSe2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117793
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  • 8
    Electronic Resource
    Electronic Resource
    Double-disk structure for output coupling in microdisk lasers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 3167-3169 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report our experiment on the use of a double-disk structure to couple light output from a microdisk laser which allows us to maintain a high Q value of the microdisk resonator. The small photon leakage rate from the lower lasing disk to the top waveguiding disk can be carefully controlled by choosing the distance between the two disks. Various structures can be fabricated on the top disk to couple the light out. In this letter, a simple opening in the top disk is used for output coupling. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112470
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  • 9
    Electronic Resource
    Electronic Resource
    Growth and characterization of InNxAsyP1−x−y/InP strained quantum well structures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1161-1163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we propose the material InNxAsyP1−x−y (InNAsP) on InP for long-wavelength laser applications, where the unique feature of the smaller lattice constant of nitrides together with the large electronegativity of nitrogen atoms has been utilized in reducing the system strain while increasing the conduction-band offset by putting N into a compressively strained material system. InNAsP/In(Ga)(As)P strained quantum well (QW) samples were grown by gas-source molecular beam epitaxy with a rf nitrogen plasma source. Very sharp and distinct satellite peaks as well as Pendellosung fringes are observed in high-resolution x-ray rocking curves for these QWs, indicating good crystalline quality, lateral uniformity, and vertical periodicity. Photoluminescence (PL) measurements on InNAsP/InP single QWs with different well widths as well as on InNAsP/InGaAsP multiple QWs reveal strong PL emissions in the range of from 1.1 to 1.5 μm, demonstrating their suitability for long-wavelength applications. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121000
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  • 10
    Electronic Resource
    Electronic Resource
    Bowing parameter of the band-gap energy of GaNxAs1−x (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1608-1610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of nitrogen incorporation in GaAs using a N rf plasma source. The N composition can be increased by lowering the growth temperature. X-ray diffraction shows no phase separation. Optical absorption measurements indicate that GaNxAs1−x is a direct band-gap material in the N composition range studied (x≤14.8%), rather than a semimetal, contrary to theoretical predictions based on Van Vechten's model. Analyzing the N composition dependence of the band-gap energy of the alloy indicates a composition-dependent bowing parameter, consistent with the first-principles supercell calculations [L. Bellaiche, S. H. Wei, and A. Zunger, Phys. Rev. B 54, 17 568 (1996)]. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118630
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