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  • 1
    Electronic Resource
    Electronic Resource
    Diffusion and drift of Si dopants in δ-doped n-type AlxGa1−xAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2592-2594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The study of diffusion and drift of Si in AlxGa1−xAs by means of capacitance-voltage measurements reveals that low substrate temperatures during growth by molecular beam epitaxy are required to achieve δ-function-like doping profiles. The diffusion coefficient of Si in Al0.3Ga0.7As is determined. We further show theoretically that the random Poisson distribution (usually assumed for dopant distributions in semiconductors) should be modified at high dopant concentrations due to repulsive interactions of impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101059
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  • 2
    Electronic Resource
    Electronic Resource
    A study of group-V desorption from GaAs and GaP by reflection high-energy electron diffraction in gas-source molecular beam epitaxy (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2806-2809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Desorption behaviors of arsenic on GaAs and phosphorus on GaP surfaces have been studied by the specular-beam intensity change of reflection high-energy electron diffraction when the group-V cracker shutter is closed in gas-source molecular beam epitaxy. We obtained an activation energy of 58 kcal/mol for arsenic desorption from GaAs. Compared with arsenic on GaAs, phosphorus on GaP has a large desorption rate constant, and the activation energy of phosphorus desorption is 43 kcal/mol. These activation energies are comparable to the heats of vaporation of As2 and P2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351532
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  • 3
    Electronic Resource
    Electronic Resource
    Interband transitions in InAsxP1−x/InP strained multiple quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1645-1647 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the optical study of the interband transitions in InAsxP1−x/InP strained-layer multiple quantum wells grown by gas-source molecular beam epitaxy. Low-temperature photoluminescence, photoluminescence excitation, and room temperature photomodulated transmission measurements were performed to investigate optical interband transitions. In addition to transitions associated with the heavy-hole and the light-hole bands, a transition involved with the spin-orbit split-off band was observed. We also observed spectral linewidth broadening due to compositional inhomogeneity and layer-thickness fluctuations from the sample using short-period superlattices as the well materials. Calculations based on the envelope-function approximation and phenomenological deformation potential theory, including both band nonparabolicity and strain-induced valence-band mixing, were compared with experimental data to identify the optical transitions between quantized states in the wells. We found good agreement between theory and experiment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351683
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  • 4
    Electronic Resource
    Electronic Resource
    A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 255-259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A kinetic model has been developed to explain As and P incorporation behaviors in GaAs1−xPx epilayers grown on GaAs (001) by gas-source molecular beam epitaxy. The model can predict the P compositions for various substrate temperatures and flow rates. The model shows that an in situ determination of GaP molar fraction in GaAs1−xPx can be performed by group V-induced intensity oscillations of reflection high-energy-electron diffraction at low substrate temperatures where desorption of group V species is negligible. At high substrate temperatures the compositions can be determined from the arsine and phosphine flow rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354155
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  • 5
    Electronic Resource
    Electronic Resource
    Optimization and characterization of interfaces of InGaAs/InGaAsP quantum well structures grown by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2889-2891 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a study of the interfaces of InGaAs/InGaAsP quantum wells (QWs) grown by gas-source molecular beam epitaxy. By optimizing the group-V source supply sequence, a photoluminescence (PL) linewidth as narrow as 6.6 meV has been observed from a 2 nm wide single QW. The PL linewidths have been analyzed to evaluate the contributions of alloy compositional scattering and interface roughness. The analysis shows that for QW structures grown with the optimized growth sequence, the PL linewidth is mainly due to alloy compositional variations, whereas the contribution from interface roughness is small, indicating a good interface control. By considering the strain effect on the band alignment of the InGaAs/InGaAsP heterojunction, theoretical transition energies of QWs have been calculated using the envelope-function approximation, and the results agree well with the experimental data. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360032
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  • 6
    Electronic Resource
    Electronic Resource
    Planarized growth of AlGaAs/GaAs heterostructures on patterned substrates by molecular beam epitaxy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2128-2130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The profiles of AlGaAs/GaAs heterostructures grown by gas-source molecular beam epitaxy (GSMBE) on patterned substrates at different growth temperatures have been studied. It was found that at higher substrate temperature, the GSMBE growth results in Al clustering and the formation of high index planes. With a proper combination of low growth temperature and etched profile, a quasiplanarized surface is obtainable. A process simulation program is found to be capable of simulating the GSMBE growth profile at lower substrate temperature with reasonable accuracy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354739
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  • 7
    Electronic Resource
    Electronic Resource
    Optical property of InAsP/InP strained quantum wells grown on InP (111)B and (100) substrates (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4673-4679 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAsP/InP strained multiple quantum wells (MQWs) were grown on InP (111)B and (100) substrates by gas-source molecular-beam epitaxy. Specular surfaces were obtained under optimized growth conditions on InP (111)B substrates miscut 1° to the 〈110〉 direction. Photoluminescence, absorption and photoluminescence excitation spectra were taken for InAsP/InP strained MQWs at low temperature. Distinct optical transitions were resolved. Energy-level calculations were carried out for both (111)B and (100) MQWs by taking into account the differences in elastic deformation, strain-induced band-edge shift, valence-band anisotropy, and the piezoelectric effect. The peaks were successfully assigned as different interband excitonic transitions. The best fit of the energy-level calculation to the experimental spectra suggests that the valence-band offset ratios (Qv=ΔEv/ΔEg) for (111)B and (100) InAsP/InP heterostructures are 0.35 and 0.30, respectively. This dependence on the substrate orientation was accounted for in terms of the strain-induced band-edge shift.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355920
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  • 8
    Electronic Resource
    Electronic Resource
    Origin of n-type conductivity of low-temperature grown InP (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 600-602 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown with correlated magnetic resonance and electrical measurements that the PIn antisite is the prevailing defect in InP grown by molecular-beam epitaxy at low temperature. The first ionization level of the PIn antisite is resonant with the conduction band, which makes the material n-type conducting due to autoionization of the PIn antisite.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357052
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  • 9
    Electronic Resource
    Electronic Resource
    Reflection high-energy electron-diffraction study of metalorganic molecular-beam epitaxy of GaAs using trimethylgallium and arsenic (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4393-4395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth behavior of metalorganic molecular-beam epitaxial (MOMBE) growth of GaAs using trimethylgallium and solid arsenic is studied by the intensity oscillation behavior of reflection high-energy electron-diffraction (RHEED). The growth process is more complicated than conventional MBE using elemental sources. In MOMBE the growth rate depends not only on the substrate temperature but also on the arsenic pressure. In addition, the RHEED behavior indicates a possibility of atomic layer epitaxy using trimethylgallium.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344914
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  • 10
    Electronic Resource
    Electronic Resource
    A differential reflection high energy electron diffraction measurement system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 62 (1991), S. 655-659 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An economical, real-time differential reflection high energy electron diffraction (RHEED) measurement system which is effective in a high-noise environment is described. Two fiber optic cables sample the RHEED intensities from the phosphorescent screen in a molecular beam epitaxy (MBE) growth chamber. The first cable observes the RHEED oscillations with the inherent background noise while the second cable monitors the background noise. The differential RHEED unit subtracts the RHEED signal combined with the background noise from the background noise, leaving only the RHEED signal. The resultant "clean'' RHEED oscillation is displayed on an IBM compatible computer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142063
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