Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
70 (1997), S. 2589-2591
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the in situ chemical beam etching (CBET) process of (Al)GaAs using tris-dimethylaminoarsenic (TDMAAs) within a chemical beam epitaxy chamber. The optimal CBET condition of (Al)GaAs is established, according to the analysis of atomic force microscopy, capacitance–voltage carrier profiles, and current–voltage (I–V) measurements. This CBET process using TDMAAs is shown to provide a good etching selectivity (〉20) of GaAs over AlxGa1−xAs (x≥0.35) with a very smooth etched surface at the nanometer scale and a clean etched/regrown interface for regrowth applications. Improved I–V characteristics of etched/regrown p-n AlxGa1−xAs (x≤0.35) junctions is also successfully demonstrated when the GaAs cap layer is preferentially etched first by TDMAAs before regrowth of AlxGa1−xAs.© 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.119087
Permalink
|
Location |
Call Number |
Expected |
Availability |