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  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of atomic transport in ion mixing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2354-2358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during ion beam mixing of Si/Ni and Si/Pt bilayers were investigated at temperatures between liquid-nitrogen temperature (LN2) and 180 °C using imbedded markers and Rutherford backscattering. For Si/Ni samples irradiated with Ar ions, the flux ratio of Si to Ni decreased from 1.6 to 0.2 as the substrate temperature increased from LN2 to 180 °C. Over this range of substrate temperatures, the individual amount of Si atoms transported was found to remain unchanged; whereas the transport flux of Ni atoms was observed to increase. Similar temperature dependence of the flux ratio was found for the Si/Pt system. The experimental results indicate that the substantial Si motion is due to the temperature-independent part of ion mixing which is associated with collision cascades. The Ni motion is characteristic of radiation-enhanced diffusion which is substrate temperature dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342472
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  • 2
    Electronic Resource
    Electronic Resource
    On the low resistance Au/Ge/Pd ohmic contact to n-GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4211-4215 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that a Au/Ge/Pd layered structure can result in low contact resistivities (∼10−6 Ω cm2) to n-GaAs processed in three temperature ranges (175–200, 340–350, and 425–450 °C). The contacts processed below the Au–Ge eutectic temperature (361 °C) show good surface and interface morphology, thermal stability, Au wire bondability, and reproducibility. The ohmic contact formation mechanisms are also presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361788
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  • 3
    Electronic Resource
    Electronic Resource
    Ohmic contact formation mechanism of the Au/Ge/Pd/n-GaAs system formed below 200 °C (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4216-4220 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the ohmic contact formation mechanism of the low resistance (∼1×10−6 Ω cm2) Au/Ge/Pd contact to n-GaAs annealed at 175 °C. Cross-sectional transmission electron microscopy and Rutherford backscattering spectrometry were utilized in this study. It is found that the solid phase regrowth process, interdiffusion between Au and Ge, and the enhancement of the conductivity of the excess Ge layer are responsible for the observed low contact resistivity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361789
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  • 4
    Electronic Resource
    Electronic Resource
    Simultaneous disordering and isolation induced by ion mixing in InGaAs/InP superlattice structures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1306-1311 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phenomenon of simultaneous compositional disordering and the formation of electrical resistive layers induced by oxygen implantation in InGaAs/InP superlattices has been investigated. The disordering characteristics have been studied as a function of implantation temperature and ion dose. It was found that implantation at elevated temperatures (referred to as the IM or ion mixing process) usually leads to much more efficient disordering compared to implantation at room temperature followed by annealing at the same elevated temperature (referred to as the implantation plus annealing process). Of particular interest is the observation that ion mixing at 550 °C with 1×1013 O+/cm2 leads to significantly more disordering than implantation with the same dose at room temperature followed by annealing at 550 °C for the same period of ion mixing time. In addition, the electrical resistance of the ion-mixed layer at 550 °C increases 2600 times for the p-type InGaAs/InP superlattice structure, whereas the sample implanted at room temperature and annealed at 550 °C showed only a 20 times increase in electrical resistance. These results indicate a distinct advantage for the IM process in achieving simultaneous compositional disordering and electrical isolation for optoelectronic applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351737
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  • 5
    Electronic Resource
    Electronic Resource
    InGaAs/InP superlattice waveguides by elevated temperature argon ion mixing (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2020-2022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical waveguides fabricated by argon ion mixing in InGaAs/InP superlattice structures grown by low-pressure metalorganic chemical vapor deposition are demonstrated for the first time. Implantation of argon ions at ∼400 °C eliminates the need for a high-temperature post-anneal to induce the compositional disordering. As-grown and argon-implanted samples were studied using x-ray diffraction and optical absorption measurements. Planar buried rib waveguides operating at a 1.5 μm wavelength are fabricated by selective ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102150
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  • 6
    Electronic Resource
    Electronic Resource
    Planar Ge/Pd and alloyed Au-Ge-Ni ohmic contacts to n-AlxGa1−xAs (0≤x≤0.3) (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 721-723 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Specific contact resistivity ρc of planar Ge/Pd ohmic contacts to n-type AlxGa1−xAs is measured as a function of AlAs mole fraction x and anneal temperature Tann. The functional dependence of ρc on Tann is the same for all x, decreasing to a minimum at 275–325 °C. This indicates that the ohmic contact formation mechanism is independent of x(0≤x≤0.3) as verified by MeV Rutherford backscattering spectrometry and Read camera glancing angle x-ray diffraction. Decomposition of an epitaxial Pd-AlxGa1−xAs phase is correlated with the onset of ohmic behavior and may result in a thin solid phase regrown interfacial AlxGa1−xAs layer. An undoped 20 nm GaAs cap layer reduces ρc by about one order of magnitude. Ge/Pd contacts display greater dependence of ρc on x and much smoother surface morphology compared with those of standard Au-Ge-Ni contacts on AlxGa1−xAs (0≤x≤0.3).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100872
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  • 7
    Electronic Resource
    Electronic Resource
    Low-resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonspiking (nonalloyed) Ge/Pd ohmic contact formed via solid phase reaction on an AlGaAs/GaAs high electron mobility transistor (HEMT) was investigated. The surface morphology of the Ge/Pd contact is smooth and planar with a typical contact resistivity of about 3×10−7 Ω cm2. The current-voltage characteristics of the HEMTs with the Ge/Pd contacts are similar to those with the conventional AuGe/Ni spiking (alloyed) contacts. Since only a thin substrate surface layer of 100–200 A(ring) was reacted with the Ge/Pd contact, we can conclude that ohmic contacts can be made to the two-dimensional electron gas without deep penetration of the metallization. This observation is in agreement with the concept that transport due to tunneling is significant across heterojunctions. The Ge/Pd contact may be potentially useful in HEMT integrated circuit technology.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101032
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  • 8
    Electronic Resource
    Electronic Resource
    Schottky barrier engineering in III–V nitrides via the piezoelectric effect (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1880-1882 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for enhancing effective Schottky barrier heights in III–V nitride heterostructures based on the piezoelectric effect is proposed, demonstrated, and analyzed. Two-layer GaN/AlxGa1−xN barriers within heterostructure field-effect transistor epitaxial layer structures are shown to possess significantly larger effective barrier heights than those for AlxGa1−xN, and the influence of composition, doping, and layer thicknesses is assessed. A GaN/Al0.25Ga0.75N barrier structure optimized for heterojunction field-effect transistors is shown to yield a barrier height enhancement of 0.37 V over that for Al0.25Ga0.75N. Corresponding reductions in forward-bias current and reverse-bias leakage are observed in current–voltage measurements performed on Schottky diodes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122312
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  • 9
    Electronic Resource
    Electronic Resource
    Relationship between implantation damage and electrical activation in gallium arsenide implanted with Si+ (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between implantation damage and electrical activation has been investigated in GaAs implanted with 100-keV 30Si+ to doses of 5×1013/cm2 and 2×1014/cm2, using low and moderate beam currents at room temperature (RT) and at slightly elevated temperatures. For a given Si+ dose, the damage, measured by ion channeling immediately after implantation, was varied by more than a factor of 2 over the range of conditions studied. A strong negative correlation was established between this damage and the electrical activation obtained after high-temperature annealing, i.e., an increase in the initial damage led to a decrease in the sheet-carrier concentration. The results demonstrate a scheme for increasing the sheet-carrier concentration beyond that typically obtained for high-dose Si in GaAs, namely, by using a slightly elevated implant temperature (∼90 °C for a beam current of 1 μA/cm2). In addition, the initial damage is shown to consist of two components; one that is stable at RT and another that is not. The sheet-carrier concentration was found to be affected only by that component of the damage that is stable at RT, although both components were reduced by increasing the implant temperature or by reducing the dose rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110928
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  • 10
    Electronic Resource
    Electronic Resource
    Laser spectral linewidth dependence on waveguide loss measurements using the Fabry–Perot method (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 536-538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical role of the optical source spectral linewidth in semiconductor low loss waveguide measurements using the Fabry–Perot resonance method is analyzed. For 5-mm-long GaAs/AlGaAs waveguides with losses in the 1 dB/cm range, a frequency stabilized single mode laser with a linewidth of less than 0.01 A(ring) is required to obtain a loss value accurate to within 5%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111095
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