ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Temperature dependence of atomic transport in ion mixing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2354-2358 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The moving species during ion beam mixing of Si/Ni and Si/Pt bilayers were investigated at temperatures between liquid-nitrogen temperature (LN2) and 180 °C using imbedded markers and Rutherford backscattering. For Si/Ni samples irradiated with Ar ions, the flux ratio of Si to Ni decreased from 1.6 to 0.2 as the substrate temperature increased from LN2 to 180 °C. Over this range of substrate temperatures, the individual amount of Si atoms transported was found to remain unchanged; whereas the transport flux of Ni atoms was observed to increase. Similar temperature dependence of the flux ratio was found for the Si/Pt system. The experimental results indicate that the substantial Si motion is due to the temperature-independent part of ion mixing which is associated with collision cascades. The Ni motion is characteristic of radiation-enhanced diffusion which is substrate temperature dependent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342472
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Microstructure of epitaxially oriented superconducting YBa2Cu3O7−x films grown on (100) MgO by metalorganic decomposition (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 286-288 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure in epitaxially oriented thin films of YBa2Cu3O7−x grown on (100) MgO by metalorganic decomposition has been studied by transmission electron microscopy and ion channeling. The as-prepared films consisted of single-crystal platelets lying flat on the MgO surface. The majority of the crystallites showed perfect alignment of their c axis with the [100] axis of MgO, while some crystallites were found to have a misorientation of up to 7.5°. Images of the interfacial regions showed good epitaxial growth to within one lattice spacing of the MgO substrate. He++ channeling measurements as a function of energy from 1 to 4.5 MeV indicated a 0.51° spread in crystallite orientation. Extrapolation of the channeling measurements to the limit of zero crystallite spread gave a minimum yield of 0.20 for bulk YBa2Cu3O7−x , which is much larger than the value reported for single crystals. The large backscattering yield is attributed to the grain boundaries in the film. A relatively strain-free interface was indicated by channeling results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102406
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial growth of oxides on semiconductors using fluorides as a buffer layer (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1366-1375 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The success in epitaxial growth of oxides on Si using an intermediate fluoride layer largely depends on the reactivity of the fluoride with the oxide and the stability of the fluoride against oxidation. The fluoride-oxide reaction was studied by Rutherford backscattering spectrometry and x-ray diffractometry. It is found that a large number of oxides are stable on CaF2, while some containing K, Li, and Ba react with CaF2. The results are consistent with thermodynamic predictions, and correlate well with the equalized electronegativity of the oxides. The stability of bare CaF2 on Si is found to be strongly related to the ambient. The CaF2 surface remains intact after annealing at 650 °C in 25% O2/N2, although Ca-silicate formation takes place at the Si-CaF2 interface. When annealing is conducted in air, Ca-carbonate is readily formed at the surface. The results provide guidelines for epitaxial growth of oxides on semiconductor/fluoride structures. The potential application of using fluorides as buffer layers is demonstrated in epitaxial growth of SrTiO3 on (100)Si/CaF2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354894
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Limitations on the critical current density in Bi2Sr2CaCu2O8 films grown on MgO(001) by metalorganic deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2356-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been carried out in order to elucidate the mechanisms for low critical current densities in superconducting oxide films prepared by metalorganic deposition. Bi2Sr2CaCu2O8 films grown on MgO(001) have stoichiometric composition and exhibit limited interfacial reaction with the underlying substrates. The films have a low content of carbon and the grain boundaries are mostly clean. Rocking curve analysis shows a narrow peak, while pole figure measurements indicate a strong mosaic pattern. The films exhibit a low critical current density and the magnetic susceptibility versus temperature has a high field dependence. A substantial increase in critical current densities can be achieved when the orientations of Bi2Sr2CaCu2O8 crystallites in the a-b plane are improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351089
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Ion mixing of near-noble monosilicides with Si substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3395-3399 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Xe ion irradiation of NiSi, PdSi, and PtSi on Si was performed at various substrate temperatures. The phase formation and mixing behavior of the three monosilicides with their Si substrates are quite different. For NiSi, NiSi2 was formed on amorphous Si substrates at 350 °C, while NiSi remained stable on crystalline Si substrates even at 400 °C. PtSi reacted with Si to form a metastable Pt4Si9 phase, which decomposed back to PtSi and Si by successive irradiation at higher temperatures. The decomposition of the metastable Pt4Si9 was easier on crystalline Si substrates than on amorphous substrates. No mixing was observed for PdSi on Si in the temperature range of 35–400 °C. The ion mixing results were compared with those from thermal annealing. The importance of demixing of a thermally stable system was explored.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342655
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Epitaxially oriented YBa2Cu3O7−x thin films on 〈100〉 MgO prepared by metallo-organic decomposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 463-466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of YBa2Cu3O7−x were prepared by metallo-organic decomposition. Both ion channeling and x-ray diffraction measurements showed that the oxide films grown on 〈100〉 MgO are epitaxially oriented in structure. The minimum yield of metal components varied from 0.58 to 0.32 in channeling measurements with the analyzing beam at energies ranging from 4.5 to 1.0 MeV. All x-ray diffraction lines corresponded to the (00l) reflections of the superconducting phase. The film exhibited complete superconductivity at 79–80 K with a transition width of 2.5 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343852
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Interfacial chemistry of Alq3 and LiF with reactive metals (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2756-2765 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure and chemistry of interfaces between tris-(8-hydroxyquinoline) aluminum (Alq3) and representative group IA and IIA metals, Al, and Al/LiF have been studied by x-ray and ultraviolet photoelectron spectroscopies. Quantum-chemical calculations at the density functional theory level predict that the Alq3 radical anion is formed upon reaction with the alkali metals. In this case, up to three metal atoms can react with a given Alq3 molecule to form the trivalent anion. The anion formation results in a splitting of the N 1s core level and formation of a new feature in the previously forbidden energy gap. Virtually identical spectra are observed in the Al/LiF/Alq3 system, leading to the conclusion that the radical anion is also formed when all three of these constituents are present. This is support by a simple thermodynamic model based on bulk heats of formation. In the absence of LiF or similar material, the reaction of Al with Alq3 appears to be destructive, with the deposited Al reacting directly with the quinolate oxygen. We proposed that in those circumstances where the radical anion is formed, it and not the cathode metal are responsible for the electron injection properties. This is borne out by producing excellent injecting contacts when Ag and Au are used as the metallic component of the cathode structure. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324681
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Sputter deposition of cathodes in organic light emitting diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4607-4612 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Sputter deposition was employed for cathode preparation in organic light emitting diodes (OLEDs). A thin film of copper phthalocyanine (CuPc) was found to be an effective buffer layer in preventing sputter damage to the OLED layer structure. However, the CuPc layer forms an electron-injection barrier with the underlying Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface from a sputter-deposited Al (Li) cathode was found to reduce the injection barrier at the interface and make the overall device efficiency comparable to a device having an evaporated MgAg cathode. The devices exhibited good operational stability with a half lifetime greater than 3800 h at 20 mA/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371410
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Characterization of treated indium–tin–oxide surfaces used in electroluminescent devices (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 1688-1692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of oxidative and reductive treatments of indium–tin–oxide (ITO) on the performance of electroluminescent devices is presented. The improvement in device performance is correlated with the surface chemical composition and work function. The work function is shown to be largely determined by the surface oxygen concentration. Oxygen-glow discharge or ultraviolet–ozone treatments increase the surface oxygen concentration and work function in a strongly correlated manner. High temperature, vacuum annealing reduces both the surface oxygen and work function. With oxidation the occupied, density of states (DOS) at the Fermi level is also greatly reduced. This process is reversible by vacuum annealing and it appears that the oxygen concentration, work function, and DOS can be cycled by repeated oxygen treatments and annealing. These observations are interpreted in terms of the well-known, bulk properties of ITO. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370948
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Coevaporation and ion implantation of Pd50Ti50 and Pt50Ti50 on AISI stainless steels for reducing wear and friction (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 300-304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pd50Ti50 and Pt50Ti50 alloy films were deposited on stainless-steel substrates and irradiated with ion beams. The samples were tested on pin-on-disk wear equipment and analyzed by Rutherford backscattering spectrometry and scanning and transmission electron microscopy. Adding Pd50Ti50 and Pt50Ti50 as a surface layer to stainless steel resulted in reduced wear and friction. Xe implantation slightly improved tribomechanical properties, while N implantation led to a dramatic reduction in wear and friction. The improvement was thought to be associated with nitride precipitation hardening and/or forming lubricious oxides during sliding. The as-deposited films exhibited amorphous structures and transformed to equilibrium compounds upon annealing. Sliding tests on amorphous and crystalline films did not show a significant difference in friction and wear behavior.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342540
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...