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  • 1
    ISSN: 1432-1157
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract  Recent sediment accumulation rates are 18–230 mg cm-2 yr-1 (0.02–0.2 cm yr-1) based on excess 210Pb activity profiles in the southwestern part of the East Sea (Sea of Japan). Assuming no mixing beneath surface mixed layers, 210Pb-derived sediment accumulation rates are 18–32 mg cm-2 yr-1 in the northern part of the Yamato Ridge and the Ulleung Basin, 29–136 mg cm-2 yr-1 in the Korea Plateau, and 230 mg cm-2 yr-1 in the southern shelf. These values generally agree with long-term sedimentation rates estimated from dated ash layers.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2456-2458 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution scanning transmission electron microscope (STEM) images in the annular dark field (ADF) imaging mode approaching the theoretical point-to-point resolution limit are presented. The ADF images were obtained from a high Tc superconducting YBa2Cu3O7−x thin-film specimen at 100 kV. The 1.9 A(ring) resolution lattice image, which is the smallest lattice spacing in the specimen, corresponds to the minimum resolvable spatial frequency with 5% contrast in the contrast transfer function for annular dark field, and is smaller than the resolution limit given by the Rayleigh criterion. This demonstrates that STEM ADF imaging can have a resolution approximately 40% better than that of the bright field conventional transmission electron microscope (CTEM) imaging at Scherzer condition.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6507-6509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the giant magnetoresistance (GMR) on the thickness of the Co layers in Co/Cu multilayers was investigated experimentally. The thickness of the Cu layer was held constant at tCu=19 A(ring), which corresponds to the second maximum of the GMR ratio oscillating dependence on tCu. The Co layer thickness was varied from 4.8 to 79.0 A(ring). High resolution transmission electron microscopy showed the existence of the two-dimensional artificial superstructure with defined periodicity as well as sharp and flat interfaces. From wide angle x-ray diffraction it was concluded that at Co layer thickness below 40 A(ring) the multilayers are polycrystalline with mainly fcc lattice structure and (111) texture. In the case of thicker Co layers indications of hcp Co could be found. The GMR ratio reaches a maximum at Co layer thickness about 11 A(ring). It was shown that the GMR in sputtered Co/Cu multilayers is due to spin scattering at the interfaces and resistance is strongly influenced by interface scattering.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2356-2362 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been carried out in order to elucidate the mechanisms for low critical current densities in superconducting oxide films prepared by metalorganic deposition. Bi2Sr2CaCu2O8 films grown on MgO(001) have stoichiometric composition and exhibit limited interfacial reaction with the underlying substrates. The films have a low content of carbon and the grain boundaries are mostly clean. Rocking curve analysis shows a narrow peak, while pole figure measurements indicate a strong mosaic pattern. The films exhibit a low critical current density and the magnetic susceptibility versus temperature has a high field dependence. A substantial increase in critical current densities can be achieved when the orientations of Bi2Sr2CaCu2O8 crystallites in the a-b plane are improved.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 446-448 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN metal–oxide–semiconductor (MOS) capacitors were fabricated by using Ga oxide formed by photoelectrochemical oxidation of GaN. The electrical properties of the MOS structures as characterized by capacitance–voltage measurement were found to be dependent on the oxidation time and posttreatment. Positive flatband voltage was observed in devices with thin oxide layers indicating the existence of negative oxide charge. Very thin oxide exhibits high capacitance and reverse leakage, which can be reduced by rapid thermal annealing (RTA). Passivation of the interface by RTA is partially responsible for the improvement. Thicker oxide layers exhibit improved electrical properties. Low density of interface states (∼1011 eV−1 cm−2) was obtained in the Ga-oxide/GaN structure grown under optimized conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 508-510 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated that polycrystalline thin films of high Tc superconducting YBa2Cu3O7−x can be grown with clean grain boundaries, i.e., without a boundary layer of segregation or different phase. In clean stoichiometric samples, angular misorientations of grains may be the origin of weak link behavior. High-resolution scanning transmission electron microscope images of films grown on ZrO2 and MgO by reactive evaporation, reactive sputtering, and laser ablation show atomic lattice images of clean grain boundaries. X-ray microanalysis with a 10 A(ring) spatial resolution also indicates no composition deviation at the grain boundaries. Grain sizes and epitaxial relations of samples prepared by different methods are characterized.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1155-1157 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The superconductive weak link properties of microbridges formed in c-axis normal YBa2Cu3O7−δ polycrystalline thin films containing a variable amount of large angle tilt boundaries have been studied. In the low critical current density limit these weak links have current-voltage (I-V) characteristics that are accurately modeled by the resistively shunted junction model. The I-V's are found to accurately follow a simple scaling law with the product of the critical current and weak link resistance Rn varying linearly with the weak link conductance.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1432-203X
    Keywords: Key words Orchid ; Particle bombardment ; PLB ; Transformation ; Key terminologyProtocorm A small storage organ formed from the germinating embryo ; possessing an apical meristem and a leaf primordium ; protocorm-like body (PLB) A somatic protocorm derived from in vitro culture of apical or axillary bud meristems ; primary PLBs PLBs induced by culturing apical meristem-tips aseptically ; secondary PLBs PLBs formed on the surface of a primary PLB in culture ; proliferate PLBs PLBs proliferating on the surface of either primary or secondary PLBs
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  A protocol is presented for genetically engineering Cymbidium orchid using particle bombardment. This protocol enabled the routine transformation of orchid plants that were previously difficult to transform. Liquid culture was used to generate a large number of protocorm-like bodies (PLBs) to be bombarded and to promote continued development of the bombarded meristematic tissue. Plasmid DNA (pKH200) carrying the GUS-INT and NPTII genes flanked by tobacco matrix attachment regions was introduced into the meristematic cells of PLBs by particle acceleration. The transformed PLBs were proliferated and selected for kanamycin resistance conferred by the introduced NPTII gene. Shoot regeneration was then induced from the kanamycin-resistant PLBs, and transgenic plantlets were produced. Both the kanamycin-resistant PLBs and regenerated shoots expressed the GUS-INT gene. The presence of the introduced gene in the transformed orchid plants was confirmed by PCR analysis, sequencing and Southern blot analysis of the PCR product. The recovered transgenic plants were established in soil and acclimatized in the greenhouse.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Optical and quantum electronics 27 (1995), S. 453-457 
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract InGaP/InGaAIP visible-light laser diodes with a metal-clad ridge waveguide structure have been fabricated. Compressively strained SCH-MQW structures were grown by low-pressure MOCVD and the lasing wavelength was 690 nm. The threshold current was 28 mA at 25°C for a 400 μm cavity and 5 μm stripe width. CW operation was obtained as the cleaved device by employing thick gold layer as a heat spreader. The light-output power versus CW current was linear up to a maximum light output power of 38 mW. Stable operation of the fundamental transverse optical mode was maintained up to 30 mW. These results show that this metal-clad ridge waveguide structure provides sufficient current confinement even under high light output power operation.
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Journal of materials science 4 (1985), S. 751-752 
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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