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  • 1
    Electronic Resource
    Electronic Resource
    High quality ZnTe-ZnSe strained-layer superlattice with buffer layer prepared by hot wall epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 239-241 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality ZnTe-ZnSe strained-layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High-angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x-ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x-ray diffraction measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101000
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  • 2
    Electronic Resource
    Electronic Resource
    The effect of native oxide on epitaxial SiGe from deposited amorphous Ge on Si (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 528-530 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the effect of native oxide on the epitaxial SiGe from deposited amorphous Ge on Si. Instead of epitaxial growth by molecular beam epitaxy or ultrahigh-vacuum chemical vapor deposition, the SiGe layer is formed by this simple process followed by an annealing step. As observed by transmission electron microscopy, the suppression of native oxide plays an important role to achieve epitaxial SiGe. The SiGe quality degrades with increasing native oxide thickness and becomes polycrystalline with a ∼20 Å interfacial native oxide. On the other hand, single crystalline SiGe can be routinely formed from a HF-vapor treated Si surface. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123176
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  • 3
    Electronic Resource
    Electronic Resource
    Nanoscale cube-on-cube growth of SrS on MgO substrate by solid-source molecular-beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of epitaxial SrS on (001)MgO substrates by solid-source molecular-beam epitaxy. During the deposition, the film structure and orientation were characterized by reflection high-energy electron diffraction. It was shown that the film epitaxial planes conserved the substrate surface symmetry—cubic. X-ray diffraction results establish the epitaxial relationship as cube-on-cube (001)SrS ||(001)MgO with [100]SrS ||[100]MgO for growth temperature between 400 and 600 °C. Scanning electron microscopy and atomic force microscopy analyses were used to study the films' surface morphology. Depending on the growth temperature, different sizes of SrS islands can be achieved. The growth of SrS on MgO is thought to occur in step-flow growth mode. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429759
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  • 4
    Electronic Resource
    Electronic Resource
    Asymmetry diffraction magneto-optical phenomenon of NiFe grating (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2034-2036 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the asymmetry of longitudinal magneto-optical Kerr loops obtained from diffracted spots of a NiFe grating. The analysis of several series of diffracted Kerr hysteresis loops reveals that the unsaturated magnetic structure not only contributes to the shape change of Kerr loops, but also results in asymmetric feature of Kerr loops because of the nonzero value of second-order magnetic response. A suitable pattern dimension, which defines the form factor, is helpful to observe asymmetry Kerr loops. Our experiment indicates that out-of-incidence-plane diffraction may offer an alternative method to observe lateral edge domain movements in patterns. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1404126
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  • 5
    Electronic Resource
    Electronic Resource
    Carrier concentration enhancement of p-type ZnSe and ZnS by codoping with active nitrogen and tellurium by using a δ-doping technique (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1143-1145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the p-type doping of ZnSe and ZnS grown by molecular beam epitaxy using active nitrogen and tellurium. Highly conductive p-type ZnSe and ZnS films have been achieved by inserting heavily N-doped ZnTe layers into each layer. A hole concentration of 7×1018 cm−3 in a ZnSe/ZnTe:N δ-doped layer and a [Na-Nd] value of 5×1017 cm−3 in a ZnS/ZnTe:N δ-doped layer were obtained. Excitonic emission associated with the N acceptor at 2.792 eV in ZnSe was dominant in the photoluminescence spectra at 14 K and the emission related to the Te isoelectronic deep centers was negligibly weak. These results indicate that the incorporation of ZnTe:N single layers by this δ-doping method dramatically increases the hole concentration, and the optical properties are consistent with this improvement.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118481
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  • 6
    Electronic Resource
    Electronic Resource
    Characteristics of graded-like multiple-delta-doped GaAs field effect transistors (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2505-2506 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multiple-δ-doped GaAs field effect transistors using graded-like δ-doping profile are demonstrated and investigated. An extremely high carrier density of 1.2×1013 (7.9×1012) cm−2 along with an enhanced Hall mobility of 1700 (3300) cm2/v s at 300 (77) K for a triple-δ-doped GaAs structure are achieved. The dc characteristic reveals an extrinsic transconductance as high as 110 mS/mm at room temperature with a gate length of 2 μm. Three separated peaks in the transconductance versus gate bias curve are observed. Meanwhile, a broad and flat transconductance region is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113148
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  • 7
    Electronic Resource
    Electronic Resource
    Fabrication of ZnSe/ZnS quantum wires using high index GaP substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6539-6543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe/ZnS quantum wires and quantum dots were grown on unpatterned substrates by molecular beam epitaxy. Several substrate orientations were compared. These structures exhibited a strong luminescence. A linear crystallographic dependence of the photoluminescence peak energy was observed when comparing structures grown in the same experimental conditions. All samples exhibited also strong zero-dimensional–one-dimensional confinement signatures. An empirical analysis is provided illuminating the issue involved by the redshift. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363673
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  • 8
    Electronic Resource
    Electronic Resource
    A new InP-based heterojunction bipolar transistor utilizing an In0.53Al0.22Ga0.25As base (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 347-348 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). No potential spike due to zero conduction band discontinuity at the emitter-base heterojunction is obtained. Meanwhile, the larger valence discontinuity (ΔEV=460 meV) than AlGaAs/GaAs and InGaAs/InP systems provides this structure with a better hole confinement. An offset voltage as low as 50 mV along with a current gain of 85 is achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114208
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  • 9
    Electronic Resource
    Electronic Resource
    High-pressure Raman study of liquid and crystalline CH3F up to 12 GPa (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 1157-1163 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: High-pressure Raman spectra of liquid and crystalline CH3F were measured up to 12 GPa at 300 K in a gasketed diamond-anvil cell. Two solid phases have been found; the transition pressures of liquid to solid phase I and phase I to phase II were determined to be 2.75 and 3.63 GPa, respectively. Among these, the solid phase I is an orientationally disordered (plastic) phase, while the solid phases II is an orientationally ordered phase. The frequency of CF stretching ν3(A1) vibration shows a large red shift with a slope dν/dP of about −2.6 cm−1/GPa in the liquid phase, and it splits into the TO and LO modes in the two solid phases. The Fermi resonances between the same symmetry vibrations of ν1(A1) and 2ν5(A1), and of ν4(E) and 2ν5(E) have been observed and their behaviors have been analyzed by the Fermi resonance theory. The pressure dependence of the CH stretching mode is compared with those of the other fluorinated methanes CH2F2, CHF2Cl, and CHF3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469174
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  • 10
    Electronic Resource
    Electronic Resource
    Pattern-induced ripple structures at silicon-oxide/silicon interface by excimer laser irradiation (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1344-1346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ripple structures by KrF excimer laser irradiation have been observed on a silicon surface capped with a thin layer of patterned silicon oxide. The ripples are highly dependent on the patterns of the silicon oxide. They are centered and enhanced at the boundaries of the opened windows, forming a radial-wavelike structure. The formation of the ripples is attributed to the combined effect of surface stress, surface scattered wave and boundary effects. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1496141
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