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  • 1
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    Two-dimensional arrangement of octadecylamine-functionalized gold nanoparticles using the LB technique (2000)
    Institute of Physics
    Details
    Publication Date: 2000-06-01
    Print ISSN: 0957-4484
    Electronic ISSN: 1361-6528
    Topics: Physics
    Published by Institute of Physics
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Synthesis and thermotropic properties of macrocyclic lipids related to archaebacterial membranes (1993)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 115 (1993), S. 6600-6608 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00068a017
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  • 3
    Electronic Resource
    Electronic Resource
    Laser ablation of solid substrates in water and ambient air (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2400-2403 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser ablation of solid substrates in ambient air and under water is investigated. It is found that the laser ablation rate is highly enhanced by the water film. A wide-band microphone is used to detect the audible acoustic wave generated during laser ablation. Peak-to-peak amplitude of the acoustic wave recorded in water confinement regime (WCR) is greater than that recorded in ambient. It is assumed that the plasma generated in WCR induces a much stronger pressure. This high-pressure, high-temperature plasma results in a much higher ablation rate. Theoretical calculation is also carried out to verify this assumption. By proper calibration, acoustic wave detection can be used as a real-time monitoring of the laser ablation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1342200
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  • 4
    Electronic Resource
    Electronic Resource
    Hysteretic ac losses in high-temperature superconductors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 386-388 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theory of ac losses in the type II superconductors in the frame of the critical state model [J. Thompson, M. Maley, and J. R. Clem, J. Appl. Phys. 50, 3531, 3518 (1979)] is applied to high Tc materials (Y-Ba-Cu-O) assuming an exponential drop of the critical current density Jc with both magnetic field and temperature. The dependence of dc magnetic field (H1) at which ac loss minimum occurs on an amplitude of ac magnetic field (h0) and on temperature Tc is calculated numerically. The two maxima of the total ac losses are found: one of them is very close to Tc and second maximum below Tc shifts to lower temperatures with increasing ac or dc magnetic field.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101454
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  • 5
    Electronic Resource
    Electronic Resource
    First report of Monilinia fructicola on peach and nectarine in China (2005)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 54 (2005), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3059.2005.01199.x
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  • 6
    Electronic Resource
    Electronic Resource
    Development and identification of wheat–Haynaldia villosa T6DL.6VS chromosome translocation lines conferring resistance to powdery mildew (2005)
    Oxford, UK : Blackwell Publishing Ltd
    Plant breeding 124 (2005), S. 0 
    Details
    ISSN: 1439-0523
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Three lines conferring resistance to powdery mildew, Pm97033, Pm97034 and Pm97035, were developed from the cross of Triticum durum-Haynaldia villosa amphidiploid TH3 and wheat cv.‘Wan7107’ via backcrosses, immature embryo and anther culture. Genomic in situ hybridization analysis showed that these lines were disomic translocation lines. Cytogenetic analysis indicated that the F1 plants of crosses between the three translocation lines and ‘Wan7107’ and crosses between the three translocation lines and substitution line 6V(6D) formed 21 bivalents at meiotic metaphase I. Aneuploid analysis with ‘Chinese Spring’ double ditelocentric stocks indicated that the translocated chromosomes were related to chromosome 6D. Biochemical and restriction fragment-length polymorphism (RFLP) analyses showed that the translocation lines lacked a specific band of 6VL of H. villosa compared with the substitution and addition lines but possessed specific markers on the short arm of the 6V chromosome of H. villosa. The three translocation lines lacked specific biochemical loci and RFLP markers located on chromosome 6DS. The results confirmed that Pm97033, Pm97034 and Pm97035 were T6DL.6VS translocation lines.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0523.2004.01062.x
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  • 7
    Electronic Resource
    Electronic Resource
    Computer correction for distorted STM images (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 5649-5652 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In quite a few cases, the geometric distortion of a scanning tunneling microscope (STM) image is essentially caused by the nonorthogonal scanning. A physical and mathematical model is proposed to correct such distortion, giving a satisfactory result.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143395
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  • 8
    Electronic Resource
    Electronic Resource
    Low-frequency noise in a thin active layer α-Si:H thin-film transistors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7952-7957 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-frequency noise of hydrogenated-amorphous-silicon (α-Si:H) thin-film transistors (TFTs) with a thin active layer and an inverted staggered device structure operating in the conducting mode has been investigated. Pure 1/f-noise spectra were observed. The results show that the physical location of the noise in α-Si:H TFTs is different from that in crystalline metal–oxide–semiconductor field-effect transistors. The noise contributions from the channel and interface have been determined for the device operating in different modes. The 1/f noise of α-Si:H TFTs stems from the channel when the device is operated in the linear region at high gate voltages. However, the 1/f noise of α-Si:H TFTs generated at the interface becomes significant when the device is operated in the saturation region. The interface noise can be explained by the number fluctuation model (ΔN model). The channel noise can be explained by either the ΔN model or the mobility fluctuation model (Δμ model). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370614
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  • 9
    Electronic Resource
    Electronic Resource
    Low-frequency electrical noise of high-speed, high-performance 1.3 μm strained multiquantum well gain-coupled distributed feedback lasers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6746-6751 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of low-frequency electrical noise (LFN) in an in-phase gain-coupled distributed feedback lasers with etched quantum-well active-layers emitting at 1.3 μm wavelength have been conducted. In particular, the injected current dependence of LFN is investigated over a wide range of injection current (from 10−2 μA to 60 mA). Pure 1/f noise spectra were observed in all measurements. The current dependence of the 1/f noise strongly correlates to the I–V characteristics. We find that noise from different mechanisms dominates when the lasers operate in different ranges of injection currents. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321778
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  • 10
    Electronic Resource
    Electronic Resource
    Selective growth of (100)-, (110)-, and (111)-oriented MgO films on Si(100) by pulsed laser deposition (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5728-5734 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective growth of singly oriented (110)-, (100)-, and (111)-MgO films on Si(100) substrates were obtained by pulsed laser deposition. The effects of deposition temperature, ambient oxygen pressure, and etching of the substrate on the structural properties of the films were studied. It is found that the crystalline orientations of the MgO films are determined at the initial deposition stage by the substrate temperature only. The ambient pressure during deposition and etching of the Si substrates only effect the crystalline quality. Both (110)- and (111)-oriented films show granular grain structures. The (100)-oriented films grown on etched Si substrates display similar granular structures. Those deposited on nonetched Si substrates, however, reveal distinctive columnar grains. The observed phenomena are discussed based on the theory of crystal growth. The mechanism of the orientation selection is attributed to the energy balance between the surface and the interface energies. The varied grain structures are explained by considering the mobility of adatoms in different situations. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461059
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