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Characteristics of graded-like multiple-delta-doped GaAs field effect transistors (1995)

Kao, M. J. ; Hsu, W. C. ; Hsu, R. T. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 66 (1995), S. 2505-2506

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Multiple-δ-doped GaAs field effect transistors using graded-like δ-doping profile are demonstrated and investigated. An extremely high carrier density of 1.2×1013 (7.9×1012) cm−2 along with an enhanced Hall mobility of 1700 (3300) cm2/v s at 300 (77) K for a triple-δ-doped GaAs structure are achieved. The dc characteristic reveals an extrinsic transconductance as high as 110 mS/mm at room temperature with a gate length of 2 μm. Three separated peaks in the transconductance versus gate bias curve are observed. Meanwhile, a broad and flat transconductance region is obtained. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.113148

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