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  • 1
    Electronic Resource
    Electronic Resource
    Temperature evolution of domains in potassium niobate single crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 376-381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of domain walls in KNbO3 single crystals with temperature variation from room temperature to 300 °C has been investigated in situ by a heating visualization system. It has been observed that domain walls show active behavior in a small temperature range from the phase transition temperature of 225 °C, the range being about 10 °C in the orthorhombic phase and 15 °C in the tetragonal phase. The 90° domain walls are generated randomly and extend themselves rapidly within the crystal in high density. The 60° domain walls, which are only observed in orthorhombic phase, do not appear randomly but are formed along the boundary of intersecting 90° domain walls. The results suggest that the 90° domain walls are most likely caused by microdefects within the crystal, and that dislocations at the junction of intersecting 90° domain walls supply nucleation sites for the 60° domain walls. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362792
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  • 2
    Electronic Resource
    Electronic Resource
    Laser removal of particles from magnetic head sliders (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 499-504 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative investigation of laser-induced removal of particles from magnetic head slider surfaces has been carried out. The damage thresholds of magnetic head sliders for laser fluence and pulse number were found to be about 150 mJ/cm2 and 5000 pulses at 100 mJ/cm2, respectively. For laser fluence or pulse number above the damage threshold, laser irradiation onto magnetic head slider surfaces can cause microcracks around the pole tips. It is found that laser cleaning efficiency increases with increasing laser fluence and pulse number, but does not depend on repetition rate up to 30 Hz. Laser cleaning efficiency of removing particles from magnetic head slider surfaces can reach about 90% for Al particles and 100% for Sn particles, respectively, under appropriate conditions without causing damage. The mechanisms of laser cleaning of particles from magnetic head slider are laser-induced surface vibration, particle vibration, particle thermal expansion, and ablation with high laser fluence, which produce forces strong enough to detach particles from slider surfaces. Based on the above cleaning mechanisms, the dependence of laser cleaning efficiency on laser parameters can be explained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362754
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1−xAlxN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 188-194 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic properties of wide-energy gap zinc-blende structure GaN, AlN, and their alloys Ga1−xAlxN are investigated using the empirical pseudopotential method. Electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at Γ and those of the conduction band at Γ and X are obtained for GaN and AlN, respectively. The energies of Γ, X, L conduction valleys of Ga1−xAlxN alloy versus Al fraction x are also calculated. The information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360930
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  • 4
    Electronic Resource
    Electronic Resource
    Ion-assisted pulsed laser deposition of aluminum nitride thin films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1540-1542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum nitride (AlN) thin films were deposited by nitrogen-ion-assisted pulsed laser ablation of an AlN target. A KrF excimer laser with a pulse duration of 23 ns and a wavelength of 248 nm was used as a light source for the ablation. A nitrogen ion beam with energies in a range of 200–800 eV is used to assist the deposition. The nitrogen ion implantation can compensate the possible loss of nitrogen species in the ablated plasma and can effectively assist the deposition by providing energetic nitrogen ions. Raman and Fourier transform infrared spectroscopy measurements were used to characterize the deposited thin films. The influences of the substrate temperature and the ion energy on the electronic and structural properties of the deposited thin films were studied. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372046
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  • 5
    Electronic Resource
    Electronic Resource
    Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6994-6996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2=2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j=−3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2=Ku1=1×106 erg/cm3 and Ms1=Ms2=400 emu/cm3. Hc follows the equation Hc=−0.755j/Mst1 (j〈0). Why the calculated Hc values deviate from Hcmax=−j/Mst1 is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361269
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of ion-beam energy and substrate temperature on the synthesis of carbon nitride thin films by nitrogen-ion-assisted pulsed laser deposition (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4954-4958 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite with assistance of nitrogen ion beam bombardment. X-ray photoelectron spectroscopy, Raman spectroscopy, and ellipsometry were used to identify the binding structure, nitrogen content, and optical properties of the deposited thin films. The influence of the nitrogen ion beam energy on the compositional, electronic, and optical properties of the deposited thin films was investigated. The thin films deposited with nitrogen ion bombardment had an N/C ratio of 0.43. Raman spectroscopy measurements indicated the formation of CN triple bonds in the deposited thin films. The optical band gap Eopt was observed to decrease with the nitrogen ion energy. A nitrogen ion energy between 50 and 100 eV was deduced to be the optimal condition for depositing the carbon nitride thin films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371465
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of CrAl underlayer and intermediate layer on the properties of CoCrPtTa thin film media (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5929-5935 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study investigates the effects of CrAl underlayer and intermediate layer on the magnetic properties, crystallographic texture, and thermal stability of CoCrPtTa thin film media. Enhancement of coercivity and thermal stability factor of CoCrPtTa/CrAlx thin film media were observed when the Al concentration in the CrAl underlayer was varied from 0 to 14 at. %. We also observed an improvement in the in-plane crystallographic texture and a reduction in the magnetic switching volume and intergrain interaction. Results from the interdiffusion study using Auger depth profiling analysis, and ΔM measurement showed that the decrease of switching volume and intergrain interaction may be attributed to Al diffusion and/or Al-enhanced Cr diffusion into the grain boundary of the magnetic layer. Compared to CoCrPtTa/Cr media, we found that high coercivity, good in-plane crystallographic texture, and magnetic isolation for CoCrPtTa/CrAl media could be achieved at lower substrate temperature. This study has also shown that a CrAl intermediate layer could be used to further enhance the magnetic, crystallographic texture, and thermal stability properties of the CoCrPtTa thin film media. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1465509
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  • 8
    Electronic Resource
    Electronic Resource
    Superlattice-like structure for phase change optical recording (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3981-3987 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In order to increase the crystallization speed and data transfer rate (DTR), a superlattice-like structure (SLL) was applied to the recording layer of phase change optical disks. Unlike the conventional phase change layer, the recording layer with the SLL structure consisted of alternating thin layers of two different phase change materials, i.e., GeTe and Sb2Te3. Although neither GeTe nor Sb2Te3 could be used as a phase change layer material for practical applications, present experimental results revealed that the phase change optical disk with the SLL structure demonstrated an excellent recording property that could meet practical recording requirements. X-ray photoelectron spectroscopy was employed to confirm that the SLL structure could be preserved after many times of melting and quenching. Dynamic properties of the optical recording disk with the SLL structure were investigated with a 1 T pulse duration of 8 ns and a constant linear velocity of 19 m/s. A clear eye pattern was observed. The carrier-to-noise ratio was about 58 dB and a DTR of 47 Mbit/s was achieved. The DTR would be as high as 140 Mbit/s if the blue light is used. It has been proven that the SLL structure is a useful means to increase the DTR of phase change optical recording disks. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1454222
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  • 9
    Electronic Resource
    Electronic Resource
    Pulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3268-3274 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed-laser assisted nanopatterning of metallic layers on silicon substrates under an atomic force microscope (AFM) tip has been investigated. A 532 nm Nd:YAG pulsed laser with a pulse duration of 7 ns was used. Boron doped silicon tips were used in contact mode. This technique enables processing of structures with a lateral resolution down to 10 nm on the copper layers. Nanopatterns such as pit array and multilines with lateral dimensions between 10 and 60 nm and depths between 1.5 and 7.0 nm have been created. The experimental results and mechanism of the nanostructure formation are discussed. The created features were characterized by AFM, scanning electron microscope and Auger electron spectroscopy. The apparent depth of the created pit has been studied as a function of laser intensity or laser pulse numbers. Dependence of nanoprocessing on the geometry parameters of the tip and on the optical and thermal properties of the processed sample has also been investigated. Thermal expansion of the tip, the field enhancement factor underneath the tip, and the sample surface heating were estimated. It is proposed that field-enhancement mechanism is the dominant reason for this nanoprocessing. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1448882
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  • 10
    Electronic Resource
    Electronic Resource
    Nanoscale cube-on-cube growth of SrS on MgO substrate by solid-source molecular-beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of epitaxial SrS on (001)MgO substrates by solid-source molecular-beam epitaxy. During the deposition, the film structure and orientation were characterized by reflection high-energy electron diffraction. It was shown that the film epitaxial planes conserved the substrate surface symmetry—cubic. X-ray diffraction results establish the epitaxial relationship as cube-on-cube (001)SrS ||(001)MgO with [100]SrS ||[100]MgO for growth temperature between 400 and 600 °C. Scanning electron microscopy and atomic force microscopy analyses were used to study the films' surface morphology. Depending on the growth temperature, different sizes of SrS islands can be achieved. The growth of SrS on MgO is thought to occur in step-flow growth mode. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429759
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