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  • 1
    Electronic Resource
    Electronic Resource
    An analysis of temperature dependent photoluminescence line shapes in InGaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1697-1699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122249
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  • 2
    Electronic Resource
    Electronic Resource
    Empirical pseudopotential band-structure calculation for Zn1−xCdxSySe1−y quaternary alloy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3948-3955 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band structure of the Zn1−xCdxSySe1−y quaternary alloy is calculated using the empirical pseudopotential method and the virtual crystal approximation. The alloy is found to be a direct-gap semiconductor for all x and y composition. Polynomial approximation is obtained for the energy gap as a function of the composition x and y. Electron and hole effective masses are also calculated along various symmetry axes for different compositions and the results agree fairly well with available experimental values.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354462
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  • 3
    Electronic Resource
    Electronic Resource
    An analysis of temperature dependent piezoelectric Franz–Keldysh effect in AlGaN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1033-1035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong Franz–Keldysh oscillations near the band gap of AlGaN are observed in the contactless electroreflectance (CER) studies of a GaN/InGaN/AlGaN multilayer structure. The line shape analysis of the CER spectra at different temperatures provides an accurate determination of the AlGaN band gap energies and the built-in electric fields. Using the existing data of the thermal expansion coefficients of GaN and sapphire, and the piezoelectric constants of AlGaN, the temperature dependence of the electric field is estimated and is in good agreement with the experimental results between 15 and 300 K. We attribute such electric field to the piezoelectric strain effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125929
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  • 4
    Electronic Resource
    Electronic Resource
    Pressure-induced resonant Raman scattering in Ge/Si islands (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2919-2921 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-assembled Ge islands grown by solid-source molecular-beam epitaxy were investigated by resonant Raman scattering under hydrostatic pressure at room temperature. We utilize the effect of pressure to tune the electronic transition through laser excitation energies in the Ge islands. The pressure coefficient of this resonating electronic transition thus obtained is ∼2.7±0.5 meV/kbar, which is significantly smaller than the pressure shift of the El transition in bulk Ge. This is attributed to the fact that the Ge islands are strongly constrained by the surrounding Si lattice, leading to a smaller deformation as compared to the bulk Ge, when subjected to the same pressure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1471377
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  • 5
    Electronic Resource
    Electronic Resource
    Nanoscale cube-on-cube growth of SrS on MgO substrate by solid-source molecular-beam epitaxy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the growth of epitaxial SrS on (001)MgO substrates by solid-source molecular-beam epitaxy. During the deposition, the film structure and orientation were characterized by reflection high-energy electron diffraction. It was shown that the film epitaxial planes conserved the substrate surface symmetry—cubic. X-ray diffraction results establish the epitaxial relationship as cube-on-cube (001)SrS ||(001)MgO with [100]SrS ||[100]MgO for growth temperature between 400 and 600 °C. Scanning electron microscopy and atomic force microscopy analyses were used to study the films' surface morphology. Depending on the growth temperature, different sizes of SrS islands can be achieved. The growth of SrS on MgO is thought to occur in step-flow growth mode. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1429759
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  • 6
    Electronic Resource
    Electronic Resource
    Dislocations and related traps in p-InGaAs/GaAs lattice-mismatched heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2849-2851 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocations and traps in p-InGaAs/GaAs lattice-mismatched heterostructures are investigated by cross-section transmission electron microscopy (XTEM) and deep level transient spectroscopy (DLTS). The misfit dislocations and threading dislocations observed by XTEM in different samples with different In mole fractions and different InGaAs layer thicknesses over all satisfy the Dodson–Tsao plastic flow critical layer thickness curve. By comparing the XTEM and DLTS results, we identify that the threading dislocations in bulk layers introduce three hole trap levels H1, H2, and H5 with DLTS activation energies of 0.32, 0.40, and 0.88 eV, respectively, and one electron trap level E1 with a DLTS activation energy of 0.54 eV. The misfit dislocations in the relaxed InGaAs/GaAs interface induce a hole trap level H4 with a DLTS activation energy of 0.67–0.73 eV. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117339
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  • 7
    Electronic Resource
    Electronic Resource
    ON THE OPTIMAL CONTROL OF NATIONAL ECONOMIC SYSTEM (1978)
    Oxford, UK : Blackwell Publishing Ltd
    Metroeconomica 30 (1978), S. 0 
    Details
    ISSN: 1467-999X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: In this paper, optimal policies for a national economic system modelled and modified on the basis of the cyclical growth theory developed by Keynes – Phillips – Bergstrom (4) are investigated with the aid of Pontryagin Maximum Principle. Further, a numerical example is presented using the computer programme given in the reference (15, pp. 20–31) with some modification. Its details are discussed in Section 4.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1467-999X.1978.tb00587.x
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  • 8
    Electronic Resource
    Electronic Resource
    Existence and uniqueness of solutions of system governed by second order quasilinear integro-partial differential equation of parabolic type (1979)
    Springer
    Aequationes mathematicae 19 (1979), S. 301-302 
    Details
    ISSN: 1420-8903
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02189871
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  • 9
    Electronic Resource
    Electronic Resource
    On the sublattice-lattice of a lattice (1984)
    Springer
    Algebra universalis 19 (1984), S. 61-73 
    Details
    ISSN: 1420-8911
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01191493
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  • 10
    Electronic Resource
    Electronic Resource
    Existence and uniqueness of solutions of system governed by second order quasilinear integro-partial differential equation of parabolic type (1980)
    Springer
    Aequationes mathematicae 20 (1980), S. 133-148 
    Details
    ISSN: 1420-8903
    Keywords: Primary 45K05 ; Secondary 35K05
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract Recently, Teo and Ahmed [17] have established the existence and uniqueness of solutions for a class of systems governed by second order quasilinear parabolic integro-partial differential equations. In their system equation, all but the second order coefficients are assumed to be bounded and measurable while more restrictive assumptions are imposed on the second order coefficients. In this paper, their results are generalized so that the second order coefficients can also be assumed to be bounded and measurable. However, the parabolic integro-partial differential equation is in “divergence form” and the solution of the system under consideration is in the sense of Aronson [1]. Our main result is presented in Theorem 3.6 which is proved using several fundamental results reported by Aronson [1].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02190508
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