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  • 1
    Electronic Resource
    Electronic Resource
    The superionic phase transition of fluorite-type crystals
    Amsterdam : Elsevier
    Journal of Physics and Chemistry of Solids 47 (1986), S. 521-528 
    Details
    ISSN: 0022-3697
    Keywords: Bragg-Williams approximation ; fluorite-type crystals ; quasichemical approximation ; superionic
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-3697(86)90052-1
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  • 2
    Electronic Resource
    Electronic Resource
    The growth and atomic structure of the Si(1 1 1)-indium interface studied by surface X-ray diffraction
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 198 (1994), S. 246-248 
    Details
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0921-4526(94)90171-6
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  • 3
    Electronic Resource
    Electronic Resource
    Transient diffusion of Ga in amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5719-5723 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of Ga in amorphous silicon (a-Si) in the temperature range of 560–830 K by means of medium-energy ion scattering has been studied. During the initial 10 s of the annealing the diffusivity shows a transient behavior that is attributed to the change in the relaxation state of the amorphous matrix. From 560 to 830 K the diffusivity during relaxation is enhanced by seven to two orders of magnitude compared to the value for bulk a-Si. Possible models that show the observed transient diffusion behavior are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357079
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of epitaxial β-FeSi2 films on Si(001) as studied by medium-energy ion scattering (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1104-1109 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrathin (∼1.3 nm) epitaxial films of β-FeSi2 were grown on Si(001) by room temperature (RT) deposition of Fe followed by annealing. During the various stages of the growth process, the lattice structure, composition, and morphology of the films were investigated by medium-energy ion scattering in conjunction with shadowing and blocking. At RT, the deposited Fe reacts with the Si(001) substrate and forms a continuous film of average composition FeSi. After annealing to 670 K, a conversion into β-FeSi2 has taken place and the film is no longer continuous. Further annealing at higher temperatures results in the formation of islands of increasing height. The β-FeSi2 films grown are composites of two azimuthal orientations with respect to the substrate: The predominant A orientation with β-FeSi2 [010](parallel) Si〈110〉 and the B orientation with β-FeSi2 [010] (parallel) Si〈100〉. The lattice strain in the films is partially relaxed. At the interface, the Fe atoms are found to be displaced from bulk lattice sites. These displacements are thought to be associated with the formation of atomic bonds at the interface of the dissimilar β-FeSi2(100) and Si(001) lattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353273
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  • 5
    Electronic Resource
    Electronic Resource
    Incorporation and optical activation of erbium in silicon using molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2658-2662 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium is incorporated in crystalline silicon during molecular beam epitaxy on Si(100) at 600 °C, either in vacuum (6×10−11 mbar) or in an O2 ambient (4×10−10 mbar). Strong Er segregation takes place during growth in vacuum, and only 23% of the total deposited Er is incorporated in the epitaxial layer. Films grown in an O2 ambient show no Er segregation, and an Er concentration of 1.5×1019 Er/cm3 is incorporated in the crystal. The O content is 4×1019 O/cm3. Photoluminescence spectra taken at 10 K show the characteristic intra-4f luminescence of Er3+ at 1.54 μm for both samples, grown with and without O2. Differences found in the spectral shape indicate a difference in the local environment (presumably O coordination) of Er for the two cases. The O codoped film shows a 7 times higher Er luminescence peak intensity than the film grown without O. This is due to the higher incorporated Er concentration as well as an increased luminescence efficiency (lifetime without O: 0.33 ms, with O: 1.81 ms). The Er excitation efficiency is lower in the O codoped film than in the O-undoped film, which is attributed to the lower minority carrier lifetime in the O-doped material. Thermal annealing of the O codoped film at 1000 °C increases the excitation efficiency and hence the Er luminescence intensity. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361136
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  • 6
    Electronic Resource
    Electronic Resource
    A solution of the doping problem for Ga delta-doping layers in Si (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4933-4938 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of Ga in silicon during the fabrication of delta-doping layers. The delta-function doping profiles were grown by molecular beam deposition following a solid phase epitaxial growth method. Medium-energy ion scattering, secondary ion mass spectrometry, and Rutherford backscattering spectrometry were used to determine the structure and composition of the grown films. The interface velocity of the crystallization front and the diffusion coefficient of the impurity atoms in the Si matrix, both relevant parameters of the growth process, were measured. Optimum growth conditions were found that yield Ga doping profiles of less than 1.0 nm (full width at half maximum), with more than 95% of the buried dopant atoms on lattice sites. For these optimum growth conditions, a model is derived explaining the observed incorporation of the Ga atoms. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359782
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  • 7
    Electronic Resource
    Electronic Resource
    An out-of-plane detector for surface x-ray diffraction (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2658-2659 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An out-of-plane detector movement has been built for the detector arm of the surface x-ray diffractometer on the wiggler beam line 9.4 on the synchrotron radiation source at Daresbury Lab. For a relative small cost, it significantly increases the volume of reciprocal space that can be accessed with a corresponding improvement in the accuracy of the determination of the interatomic spacings. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147188
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  • 8
    Electronic Resource
    Electronic Resource
    Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 4595-4604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the asymmetry between growth and dissolution using Monte Carlo simulations of flat and vicinal (100) surfaces of a Kossel crystal. We find that at a high driving force dissolution is very anisotropic and nearly atomically flat surfaces are produced, if the nearest-neighbor bond strength is sufficiently large. This effect we call kinetic smoothing. For wet-chemical etching of the Si(111) surface, the chemical-etch reaction determines the annihilation rate constants. If the differences between the rate constants for removal of atoms from kink, step, and terrace sites are large enough, then we observe smooth surfaces and anisotropic etching, i.e., kinetic smoothing. If etching is anisotropic, knowledge of the annihilation rate constants suffices to find an analytical expression for the etch rate as a function of misorientation. This expression can be used to fit experimental etch rates for etching of vicinal Si(111) in potassium hydroxide. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289812
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  • 9
    Electronic Resource
    Electronic Resource
    Segregation and trapping of erbium during silicon molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1385-1387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si(100) at 600 °C. Once a critical Er surface areal density of 2×1014 Er/cm2 is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si(100) is fully avoided when growth is performed in an oxygen background pressure of ∼10−10 mbar, due to the formation of Er-O complexes. No Er segregation is observed on Si(111), which is attributed to the formation of epitaxial Er3Si5 precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113209
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  • 10
    Electronic Resource
    Electronic Resource
    Interface roughness during thermal and ion-induced regrowth of amorphous layers on Si(001) (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1803-1805 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The roughness of Si(001) amorphous/crystalline interfaces, regrown by either solid phase epitaxy (SPE) or ion-beam-induced epitaxial crystallization (IBIEC), has been studied by measuring the scattered x-ray intensity along crystal truncation rods close to Si bulk Bragg peaks. For both regrowth methods, the interface region is well described by a discrete roughness profile. The root-mean-square roughnesses are comparable and rather small: 8.0±0.6 A(ring) and 7.4±0.6 A(ring) for the SPE and the IBIEC regrown sample, respectively. This indicates the presence of a common smoothing mechanism.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111787
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