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  • 1
    Electronic Resource
    Electronic Resource
    Density of amorphous Si (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 437-439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The density of amorphous Si has been measured. Multiple Si implants, at energies up to 8.0 MeV, were made through a contact mask to produce alternating amorphous/crystalline Si stripes with amorphous thicknesses up to ∼5.0 μm. For layers up to 3.4 μm (5 MeV), the amorphous Si is constrained laterally and deforms plastically. Above 5 MeV, plastic deformation of the surrounding crystal matrix is observed. Height differences between the amorphous and crystalline regions were measured for as-implanted, thermally relaxed, and partially recrystallized samples using a surface profilometer. Combined with ion channeling measurements of the layer thickness, amorphous Si was determined to be 1.8±0.1% less dense than crystalline Si (4.90×1022 atom/cm3 at 300 K). Both relaxed and unrelaxed amorphous Si show identical densities within experimental error (〈0.1% density difference).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111121
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  • 2
    Electronic Resource
    Electronic Resource
    Dislocation formation and B transient diffusion in C coimplanted Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2314-2325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Suppression of dislocation formation and boron transient diffusion by carbon coimplantation is studied by means of transmission electron microscopy, secondary-ion-mass spectrometry, photoluminescence spectroscopy, and high-resolution x-ray diffraction. It is shown that both the effects are due to the formation of C-related damage which acts as a trap for Si interstitials. Quantitative simulations indicate that this damage is probably formed by coprecipitation of Si and C atoms in Si1.15C complexes. These complexes also deteriorate the electrical properties of the implanted layer. They dissolve at annealing temperatures higher than 900 °C. When this occurs, the effect of C is reduced and both B transient diffusion and dislocations, as well as the recovery of the electrical properties, are observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361157
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  • 3
    Electronic Resource
    Electronic Resource
    Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2809-2817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Solid phase epitaxy of Er-implanted amorphous Si results in segregation and trapping of the Er, incorporating up to 2×1020 Er/cm3 in single-crystal Si. Segregation occurs despite an extremely low Er diffusivity in bulk amorphous Si of ≤10−17 cm2/s, and the narrow segregation spike (measured width ≈3 nm) suggests that kinetic trapping is responsible for the nonequilibrium concentrations of Er. The dependence of trapping on temperature, concentration, and impurities indicates instead that thermodynamics controls the segregation. We propose that Er, in analogy to transition metals, diffuses interstitially in amorphous Si, but is strongly bound at trapping centers. The binding enthalpy of these trapping sites causes the amorphous phase to be energetically favorable for Er, so that at low concentrations the Er is nearly completely segregated. Once the concentration of Er in the segregation spike exceeds the amorphous trap center concentration, though, more Er is trapped in the crystal. We also observe similar segregation and trapping behavior for another rare-earth element, Pr.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356173
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  • 4
    Electronic Resource
    Electronic Resource
    Trapping of Au in Si during pulsed laser irradiation: A comparison with ion beam induced segregation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2486-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Liquid phase nonequilibrium segregation and trapping of Au in Si induced by Q-switched laser irradiation are reported. Depending on the incident laser energy density, irradiation results in either amorphization or recrystallization of a near surface layer. In the latter case, at interface velocities of 9 m/s, the segregation coefficient is 0.1±0.02 and Au is trapped in near-substitutional lattice sites at concentrations of 0.5 at. %. These results are compared with recent data on solid phase, ion beam induced segregation, where Au at the amorphous-crystal interface is trapped on nonunique lattice sites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100221
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  • 5
    Electronic Resource
    Electronic Resource
    Erbium in crystal silicon: Optical activation, excitation, and concentration limits (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1256-1262 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical activation, excitation, and concentration limits of erbium in crystal Si are studied. Preamorphized surface layers of Czochralski-grown (Cz) Si(100), containing 1.7×1018 O/cm3, were implanted with 250 keV Er at fluences in the range 8×1011–8×1014 cm−2. After thermal solid-phase epitaxy of the Er-doped amorphous layers at 600 °C, Er is trapped in the crystal at concentrations ranging from 3×1016 to 7×1019 Er/cm3, as measured by secondary-ion-mass spectrometry. Photoluminescence spectra taken at 77 K show the characteristic Er3+ intra-4f luminescence at 1.54 μm. Photoluminescence excitation spectroscopy shows that Er is excited through a photocarrier-mediated process. Rapid thermal annealing at 1000 °C for 15 s increases the luminescence intensity, mainly due to an increase in minority-carrier lifetime, which enhances the excitation efficiency. Luminescent Er forms clusters with oxygen: the maximum Er concentration that can be optically activated is determined by the O content, and is (3±1)×1017 Er/cm3 in Cz-Si. The internal quantum efficiency for electrical excitation of Er in Cz-Si is larger than 3×10−6. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358927
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  • 6
    Electronic Resource
    Electronic Resource
    Solid phase epitaxy of laser amorphized silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1402-1404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The solid phase epitaxial regrowth kinetics of laser amorphized [100] silicon-on-sapphire was studied using in situ time-resolved optical transmission. Regrowth rates for ≤20-nm-thick amorphous silicon films were observed to increase from 1.7×10−10 cm/s at 750 K to 1.9×10−7 cm/s at 900 K. The recrystallization velocity followed an Arrhenius behavior with an activation enthalpy of 2.71 eV. These results provide strong confirmation that the metastable phase quenched following laser irradiation is structurally equivalent to amorphous silicon produced by ion implantation or ultrahigh vacuum deposition, and is not stabilized by impurities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99990
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  • 7
    Electronic Resource
    Electronic Resource
    Segregation and trapping of erbium at a moving crystal-amorphous Si interface (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 150-153 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Segregation and trapping of Er during solid-phase crystallization of amorphous Si on crystalline Si is studied in a concentration range of 1016–5×1020 Er/cm3. Amorphous surface layers are prepared on Si(100) by 250 keV Er ion implantation, recrystallized at 600 °C, and then analyzed using high-resolution Rutherford backscattering spectrometry using 2 MeV He+ or 100 keV H+. The segregation coefficient k depends strongly on Er concentration. At Er interface areal densities below 6×1013 Er/cm2 nearly full segregation to the surface is observed, with k=0.01. At higher Er densities, segregation and trapping in the crystal are observed, with k=0.20. The results are consistent with a model in which it is assumed that defects in the a-Si near the interface act as traps for the Er. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364002
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  • 8
    Electronic Resource
    Electronic Resource
    Avoiding preamorphization damage in MeV heavy ion-implanted silicon (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2827-2829 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Implantation of 1.0 MeV 115In in Si results in secondary-defect formation during subsequent 900 °C annealing if the total number of displaced Si atoms is greater than 1.6×1017/cm2, achieved with a dose near 1.5×1013/cm2. We demonstrate, though, that higher total In doses can be introduced without forming secondary defects by repetitive subthreshold implants each followed by an anneal to remove the implant damage. While a single 6×1013 In/cm2 implant results in a high density of dislocation loops after annealing, instead using four separate 1.5×1013 In/cm2 implants each followed by an anneal leads to the formation of only a few partial dislocations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105228
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  • 9
    Electronic Resource
    Electronic Resource
    Chemical vapor deposition of titanium–silicon–nitride films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3116-3118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Titanium–silicon–nitride films were grown by metal-organic chemical vapor deposition. At temperatures between 300 and 450 °C, tetrakis(diethylamido)titanium, ammonia, and silane react to form films with average compositions near the TiN–Si3N4 tie line and low impurity contents (C〈1.5 at. %, H between 5 and 15 at. %, with no other impurities present). The film resistivity is a strong function of Si content in the films, ranging continuously from 400 μΩ cm for pure TiN up to 1 Ω cm for films with 25 at. % Si. Step coverages of approximately 75% on 0.35 μm, 3:1 aspect ratio trenches, and 35%–40% on 0.1 μm/10:1 trenches are found for films with resistivities below 1000 μΩ cm. These films are promising candidates for diffusion barriers in microelectronic applications. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119108
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  • 10
    Electronic Resource
    Electronic Resource
    Role of C and B clusters in transient diffusion of B in silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1150-1152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient diffusion of ion-implanted B is inhibited in the presence of high C or B concentrations, due to the formation of interstitial clusters stabilized by impurity atoms. Comparison between experiments and simulations suggests that the number of self-interstitials trapped per clustered impurity atoms is ≈1.15 for C and ∼1 for B, consistent with a volume compensation mechanism. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115706
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