Electronic Resource
Copenhagen
:
International Union of Crystallography (IUCr)
Applied crystallography online
27 (1994), S. 103-110
ISSN:
1600-5767
Source:
Crystallography Journals Online : IUCR Backfile Archive 1948-2001
Topics:
Geosciences
,
Physics
Notes:
A simple fitting procedure is presented for the analysis of the strain profile in semiconductors; it has been applied to samples of ion-implanted silicon. The calculated strain profiles for some experimental rocking curves are compared with the simulated dopant-concentration profiles and the energy profiles. A two-sided Gaussian has been shown to produce an adequate fit to the strain profile in ion-implanted semiconductors. This procedure reduces the number of refinable parameters to only four and is favoured over changing the strain distribution as a function of depth in a rapid uncorrelated way. The error between the measured and calculated rocking curves has been analysed as a function of the Gaussian parameters. Besides one sharp global minimum, many local minima exist. It is shown that smoothing of the rocking curves with a triangular shape results in a reduction of the number of local minima.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1107/S0021889893007484
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