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  • American Institute of Physics (AIP)  (15)
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  • 1
    Electronic Resource
    Electronic Resource
    Precipitation of arsenic diffused into silicon from a TiSi2 source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 726-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion into a p-type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive-in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80-nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide-silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and clustering of arsenic atoms. Precipitates are easily dissolved after thermal annealing in the absence of the TiSi2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347357
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  • 2
    Electronic Resource
    Electronic Resource
    High temperature annealing effects on the electrical characteristics of C implanted Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3464-3469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical characteristics of p+–n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1×1015 cm−2 and annealed at 900 or 1100 °C. In all cases cross-sectional transmission electron microscopy shows an excellent crystalline quality, with no extended defects, and the C-rich region is characterized by an n-type doping. In the material annealed at 900 °C the C-rich region shows a low electron mobility and the presence of deep donor levels, and, as a consequence, the diode characteristics are nonideal. These effects can be attributed to the formation of C–Si self-interstitial-type complexes after the 900 °C anneal. At 1100 °C part of the C–Si complexes dissolve and the electrical characteristics of the materials noticeably improve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361394
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  • 3
    Electronic Resource
    Electronic Resource
    Gettering of metals by voids in silicon (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3727-3735 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The gettering efficiency of copper and platinum by cavities formed in silicon after high dose helium implantation and thermal processing has been investigated. The formation of helium bubbles and their evolution into cavities has been investigated by transmission electron microscopy; the measured values of void density, diameter and the width of the void layer can be interpreted by assuming a simple coalescence model. Metal impurities intentionally introduced in silicon by ion implantation are efficiently gettered inside these cavities, probably due to the large amount of unsatured bonds at the void internal surface. Processing at temperatures higher than 1000oC causes a release of the trapped metal atoms which can be gettered again by repeating the process. The method is demonstrated on real devices such as large area diodes (a particle detector) and bipolar transistors. The capability to localize in depth and across the wafer surface on the gettering sites allows the development of a new gettering engineering. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359953
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  • 4
    Electronic Resource
    Electronic Resource
    Efficiency and thermal stability of Pt gettering in crystalline Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4322-4327 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the efficiency and the thermal stability of Pt gettering at different sites in crystalline Si. In particular, we compared the gettering performances of heavily n-type doped regions formed by P diffusion, cavities formed after high-temperature annealings of He implanted Si, and damage induced by ion implantation of B, C, or Si. These sites were introduced on one side of wafers containing a uniform Pt concentration in the range 1×1013–5×1014 atoms/cm3. The uniform concentration of Pt was attained by means of Pt implantation followed by a high-temperature thermal process. The gettering efficiency of the different sites was monitored during thermal processes at 700 °C for times ranging from 1 to 48 h. Thermal stability of gettering was investigated with a subsequent thermal process in the temperature range 750–900 °C during which part of the gettered Pt is released in the bulk of the wafer. The kinetics of Pt gettering at the different sites is found to be similar since it is fully dominated by the kick-out diffusion mechanism of the metal impurity. The thermal stability is instead site-dependent and can be described in terms of an effective binding enthalpy of 1.9, 2.6, and 3.0 eV between Pt atoms and cavities, P-doped region, and ion-implantation damage, respectively. The physical meaning of the binding enthalpy is investigated and discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363381
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  • 5
    Electronic Resource
    Electronic Resource
    Lifetime control in silicon devices by voids induced by He ion implantation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9012-9016 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to control carrier lifetime in silicon locally and efficiently is presented. Voids, formed by high dose He implants, have been characterized by transmission electron microscopy demonstrating they are well localized in depth within layers thinner than 100 nm while their lateral extent is limited only by the masking capability during He implantation. Deep level transient spectroscopy measurements, performed on diodes containing different void densities, revealed the presence of two well defined trap levels, independent of void characteristics, at Ev+0.53 for holes and Ec−0.55 for electrons. These characteristics make them ideal for lifetime control in reducing parasitic transistor gain. Gummel plots on transistors have shown that when voids are formed the gain decreases from 1 to 10−3. The other transistor characteristics are only slightly influenced by the presence of voids. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362633
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  • 6
    Electronic Resource
    Electronic Resource
    Al-O interactions in ion-implanted crystalline silicon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2070-2077 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation and dissolution of Si-O-Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357616
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  • 7
    Electronic Resource
    Electronic Resource
    Characterization of C coimplanted GexSi1−x epitaxial layers formed by high dose Ge ion implantation in (100) Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3456-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated electrical and structural characteristics of C coimplanted GexSi1−x layers formed by high dose Ge implantation in (100) Si followed by rapid thermal annealing at 1100 °C for 10 s. In the absence of C the layers, with Ge peak concentrations of about 15 at. %, are epitaxial and fully strained but show extrinsic dislocation loops in the Ge end of range region. In C coimplanted GexSi1−x the crystalline quality of the materials is improved since the formation of defects at the end of range is suppressed and the strain is reduced. From an electrical point of view the situation is reversed. The electrical characterization of p+/n diodes shows that, without C coimplantation, in GexSi1−x the hole mobility is larger than in Si, and the bandgap narrowing results in an increase of the minority carrier concentration. Moreover, the diffusion of minority carriers does not appear to be influenced by the presence of the secondary defects at the end of range. Vice versa, in C coimplanted GexSi1−x, even if the extended defects are not present, we observe a high concentration of minority carrier recombination centers, which strongly reduce the carrier diffusion length. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362563
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  • 8
    Electronic Resource
    Electronic Resource
    Reduction of boron diffusion in silicon by 1 MeV 29Si+ irradiation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reduction of the transient diffusion of B, implanted in Si along [100] at 10 keV to a dose of 1×1013/cm2, after annealing at 900 °C for 10 s has been observed in samples irradiated with 1.0 MeV 29Si ions to a dose of 5×1013/cm2 or higher. A lower Si dose did not influence the transient B tail diffusion. Secondary defects formed near the peak of the 1 MeV Si damage distribution, for doses of 5×1013/cm2 and higher, act as efficient sinks for interstitials from shallower depths and thereby reduce the transient tail diffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104478
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  • 9
    Electronic Resource
    Electronic Resource
    Secondary defect annihilation in ion beam processed SixGe1−x layers using titanium silicide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2931-2933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The secondary defect annihilation titanium silicidation in SixGe1−x layers, formed by high dose Ge implantation in (100) silicon, has been studied systematically as a function of the Ge fluence, implantation energy, and TiSi2 thickness. Rutherford backscattering spectrometry and transmission electron microscopy have been used to investigate the damaged SixGe1−x layer recovery and to monitor the germanium diffusion and reaction during the silicidation. For the highest fluence of 3×1016 Ge/cm2 (≈15 at. % Ge) it is found that nearly a complete annihilation of the secondary defects can be achieved after the first low-temperature silicidation step. After a second high-temperature silicidation step all residual defects have been removed. For fluences lower than 3×1016 Ge/cm2 a complete recovery is already obtained after the first silicidation step. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114846
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  • 10
    Electronic Resource
    Electronic Resource
    Silicon-on-insulator produced by helium implantation and thermal oxidation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3654-3656 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique that produces a high quality low cost silicon-on-insulator is described. The method takes advantage of the formation of a buried porous layer in silicon implanted with light ions. Trenches are then formed in such a way that O2 can be transported into the cavities. Finally, an oxidation in dry O2 produces a buried oxide layer. Helium ions at energies of 40 or 300 keV and fluences up to 2×1017/cm2 were uniformly implanted into 5 in. silicon wafers. The oxidations were performed in a rapid thermal oxidation system by using dry O2 at a temperature of about 1000 °C and for times up to 5 min. Transmission electron microscopy on cross sectional samples revealed that high quality buried oxide layers were formed and defect free single crystal silicon remained at the surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114130
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