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  • 1
    Electronic Resource
    Electronic Resource
    Erbium doping of crystalline and amorphous silicon for optoelectronic applications (1996)
    Springer
    Il nuovo cimento della Società Italiana di Fisica 18 (1996), S. 1131-1148 
    Details
    ISSN: 0392-6737
    Keywords: Optoelectronic devices ; Conference proceedings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Summary In this work we demonstrate that efficient light emission at 1.54 μm can be achieved when Er ions are incorporated into crystalline Si or in heavily oxygen-doped amorphous and polycrystalline Si films (SIPOS). We have found that temperature quenching of photo- and electroluminescence, which is the major limitation towards the achievement of room temperature luminescence, can be strongly reduced by codoping these films with oxygen. This impurity is already present in as-prepared SIPOS and it is introduced by ion-implantation in crystalline Si. Er luminescence is obtained under both optical and electrical excitation and we demonstrate that excitation occurs through a carrier-mediated process. Electrical excitation is obtained by incorporating Er in properly designed device structures. It is found that this excitation can occur both through the recombination of hole-electron pairs and through impact excitation of the Er ions by hot electrons. These two mechanisms have different efficiencies and impact excitation is shown to prevail at room temperature. These data are presented and possible future developments are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02464691
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  • 2
    Electronic Resource
    Electronic Resource
    Grain growth and size distribution in ion-irradiated chemical vapor deposited amorphous silicon (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 109-111 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The amorphous to polycrystal transition in chemical vapor deposited (CVD) amorphous silicon has been studied at 450 °C under Kr ion beam irradiation. The average grain size increases linearly with the ion dose, and the grain size distribution is very narrow compared to thermally grown grains. These results are consistent with the presence of crystal seeds in CVD material. All these seeds can grow simultaneously under ion beam irradiation. For layers completely preamorphized by Ge+ implantation, no ion beam induced nucleation is observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102118
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  • 3
    Electronic Resource
    Electronic Resource
    Erbium in oxygen-doped silicon: Electroluminescence (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6504-6510 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature electroluminescence at 1.54 μm is demonstrated in erbium-implanted oxygen-doped silicon (27 at. % O), due to intra-4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal-(Si:O, Er)-p+ silicon diodes. The 30-nm-thick Si:O, Er films are amorphous layers deposited onto silicon substrates by chemical-vapor deposition of SiH4 and N2O, doped by ion implantation with Er to a concentration up to ≈1.5 at. %, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400 °C in reverse bias under breakdown conditions and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O, Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross section of ≈6×10−16 cm2 is obtained. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359059
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of C coimplanted GexSi1−x epitaxial layers formed by high dose Ge ion implantation in (100) Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3456-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated electrical and structural characteristics of C coimplanted GexSi1−x layers formed by high dose Ge implantation in (100) Si followed by rapid thermal annealing at 1100 °C for 10 s. In the absence of C the layers, with Ge peak concentrations of about 15 at. %, are epitaxial and fully strained but show extrinsic dislocation loops in the Ge end of range region. In C coimplanted GexSi1−x the crystalline quality of the materials is improved since the formation of defects at the end of range is suppressed and the strain is reduced. From an electrical point of view the situation is reversed. The electrical characterization of p+/n diodes shows that, without C coimplantation, in GexSi1−x the hole mobility is larger than in Si, and the bandgap narrowing results in an increase of the minority carrier concentration. Moreover, the diffusion of minority carriers does not appear to be influenced by the presence of the secondary defects at the end of range. Vice versa, in C coimplanted GexSi1−x, even if the extended defects are not present, we observe a high concentration of minority carrier recombination centers, which strongly reduce the carrier diffusion length. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362563
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  • 5
    Electronic Resource
    Electronic Resource
    High temperature annealing effects on the electrical characteristics of C implanted Si (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3464-3469 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electrical characteristics of p+–n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1×1015 cm−2 and annealed at 900 or 1100 °C. In all cases cross-sectional transmission electron microscopy shows an excellent crystalline quality, with no extended defects, and the C-rich region is characterized by an n-type doping. In the material annealed at 900 °C the C-rich region shows a low electron mobility and the presence of deep donor levels, and, as a consequence, the diode characteristics are nonideal. These effects can be attributed to the formation of C–Si self-interstitial-type complexes after the 900 °C anneal. At 1100 °C part of the C–Si complexes dissolve and the electrical characteristics of the materials noticeably improve. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361394
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  • 6
    Electronic Resource
    Electronic Resource
    Doping of semi-insulating polycrystalline silicon by B, P, and As implantation and diffusion (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 345-350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of p- and n-type layers of semi-insulating polycrystalline silicon has been investigated by implantation and diffusion of B, P, and As. At room temperature the material resistivity can be changed by more than six orders of magnitude for both p- and n-type doping. A dramatic decrease of resistivity is observed for dopant concentrations above a threshold level which corresponds to the complete filling of midgap grain-boundary traps. The determination of this critical concentration allows the evaluation of the donor and acceptor grain-boundary trap densities which are found to lie in the range from 7 to 14×1012/cm2. The charged traps produce depletion layers and potential barriers at the grain boundaries; these barriers drive the free-carrier motion under external fields. Above the threshold concentration, the barrier height decreases with the increasing concentration of active dopant, going from ≈0.5 eV to nearly 0 and correspondingly the resistivity drops down. Thermionic emission and tunneling of the carriers through these intergrain barriers are assumed to be the main conduction mechanisms. This assumption fits the temperature dependence of resistivity and the predominance of one mechanism over the other depends upon temperature, oxygen concentration, and doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355856
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  • 7
    Electronic Resource
    Electronic Resource
    Erbium in oxygen-doped silicon: Optical excitation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2642-2650 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence of erbium-doped semi-insulating polycrystalline and amorphous silicon containing 30 at. % oxygen is studied. The films were deposited on single-crystal Si substrates by chemical vapor deposition, implanted with 500 keV Er to fluences ranging from 0.05 to 6×1015 ions/cm2, and annealed at 300–1000 °C. Upon optical pumping near 500 nm, the samples show room-temperature luminescence around 1.54 μm due to intra-4f transitions in Er3+, excited by photogenerated carriers. The strongest luminescence is obtained after 400 °C annealing. Two classes of Er3+ can be distinguished, characterized by luminescence lifetimes of 170 and 800 μs. The classes are attributed to Er3+ in Si-rich and in O-rich environments. Photoluminescence excitation spectroscopy on a sample with 1×1015 Er/cm2 shows that ∼2% of the implanted Er is optically active. No quenching of the Er luminescence efficiency is observed between 77 K and room temperature in this Si-based semiconductor. The internal quantum efficiency for the excitation of Er3+ via photogenerated carriers is 10−3 at room temperature. A model is presented which explains the luminescence data in terms of trapping of electrical carriers at localized Er-related defects, and subsequent energy transfer to Er3+ ions, which can then decay by emission of 1.5 μm photons. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360125
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  • 8
    Electronic Resource
    Electronic Resource
    Precipitation of arsenic diffused into silicon from a TiSi2 source (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 726-731 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion into a p-type Si substrate of arsenic ions implanted into TiSi2 layers has been investigated for several thermal diffusion treatments in the 900–1100 °C temperature range. The drive-in was performed using either a rapid thermal annealing system or a traditional furnace. Shallow (20–80-nm depth) junctions were obtained with a high (1019–1020/cm3) dopant concentration at the silicide-silicon interface. The amount of diffused arsenic atoms measured by Rutherford backscattering spectrometry increases linearly with the square root of the annealing time. A similar relation was found for the amount of electrically active arsenic, as measured by Van der Pauw structure in combination with anodic oxidation. The two quantities differ and the inactive dopants precipitate in the diffused layer as seen by transmission electron microscopy. This behavior might be associated to the high tensile stress induced by the silicide layer on the surface silicon region and to its influence on the solid solubility and clustering of arsenic atoms. Precipitates are easily dissolved after thermal annealing in the absence of the TiSi2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347357
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  • 9
    Electronic Resource
    Electronic Resource
    Simulations of the NO+NH3 and NO+H2 reactions on Pt(100): Steady state and oscillatory kinetics (1993)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 5526-5539 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model for the reactions of NO+NH3 and NO+H2 has been developed for simulating the reduction of NO on Pt(100) in the 10−6 mbar pressure range for temperatures between 300 and 700 K. The model consists of seven ordinary differential equations for describing the coverage changes of six adsorbed species as well as an equation for describing the 1×1(arrow-right-and-left)hex phase transformation. Simulations of the N2 and H2O reaction rates for both reaction mixtures reproduced the hysteresis effects and the existence range for kinetic oscillations, which were found in the experiments. In addition, the occurrence of the so-called "surface explosion'' in both reaction systems is well described by the model. In contrast to the NO+CO reaction on Pt(100), where oscillations may also take place on a pure 1×1 substrate, the 1×1(arrow-right-and-left)hex phase transition occurs during oscillations for the NO+NH3 and NO+H2 reactions. The transitions between different adsorbate/substrate phases during one oscillatory cycle which are predicted by the model are in agreement with experimental observations made by photoemission electron microscopy (PEEM) for the NO+NH3 reaction. Using values for the constants which were taken from experiments, the model provided quantitative predictions of the absolute reaction rates as well as the relative rates of the competing reaction channels, e.g., N2 and NH3 production in the case of the NO+H2 reaction. The similar dynamical behavior observed in the NO+H2 and NO+NH3 reactions on Pt(100) is attributed to the insensitivity of NO reduction to the source of the hydrogen atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.464900
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  • 10
    Electronic Resource
    Electronic Resource
    Degradation and hard breakdown transient of thin gate oxides in metal–SiO2–Si capacitors: Dependence on oxide thickness (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6382-6391 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the dynamics of hard intrinsic dielectric breakdown of gate oxide layers with thickness between 35 and 5.6 nm in n+ polycrystalline Si–SiO2–Si metal/oxide/semiconductor capacitors after constant voltage Fowler–Nordheim stress. The buildup of defects in the oxide during the degradation phase was monitored by quasi static C–V measurements. The dynamics of the final breakdown event was followed with high time resolution, allowing to measure voltage, current, and power versus time during the breakdown transient. Transmission electron microscopy data quantifying the damage produced during this transient are reported. Finally, we propose a phenomenological model concerning the dynamics of breakdown with model parameters adjusted on the basis of the experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371701
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