ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have investigated the electrical characteristics of p+–n Si junction diodes implanted with 300 keV C ions at fluences of 0.5 and 1×1015 cm−2 and annealed at 900 or 1100 °C. In all cases cross-sectional transmission electron microscopy shows an excellent crystalline quality, with no extended defects, and the C-rich region is characterized by an n-type doping. In the material annealed at 900 °C the C-rich region shows a low electron mobility and the presence of deep donor levels, and, as a consequence, the diode characteristics are nonideal. These effects can be attributed to the formation of C–Si self-interstitial-type complexes after the 900 °C anneal. At 1100 °C part of the C–Si complexes dissolve and the electrical characteristics of the materials noticeably improve. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361394
