Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 668-670
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We performed 2 MeV Fe implantation at a temperature of 200 °C on n-type InP substrates with different background doping concentrations. We studied the activation of Fe atoms as compensating deep acceptors and the electrical properties of the implanted layers. Simulation of the current–voltage characteristics coupled with secondary ion mass spectrometry depth profiling was used to extract important parameters such as the activated Fe fraction, the resistivity, and the thickness of the compensated layers. Our results show that resistivities of the order of 107 Ω cm can also be obtained for background doping concentrations higher than 1×1018 cm−3, with active Fe concentration well above the known solid solubility limit. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124476
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