ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The luminescence centers and their conversion as a result of electron bombardment and annealing in CdS single crystals which were not specially doped and which were doped with copper have been investigated. The Cu atoms, which interact mainly with defects in the cadmium sublattice, form CuCd, which are responsible for luminescence at wavelengths λm=0.98−1.00 µm. At annealing temperatures above 50 °C, conversion of the defect complexes, which are responsible for the green (λm=0.514 µm), red (λm=0.72 µm), and infrared (λm=0.98 µm) luminescence, occurs as a result of an increase in the mobility of point defects in the cadmium and sulfur sublattices of CdS:Cu.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187242
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