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  • 1
    Electronic Resource
    Electronic Resource
    Blue-Green Photoluminescence from Silicon Dioxide Films Containing Ge〈sup〉+〈/sup〉 Nanocrystals Formed under Conditions of High Hydrostatic Pressure Annealing (2001)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 82-84 (Nov. 2001), p. 607-612 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.82-84.607.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Short-wavelength photoluminescence of SiO2 layers implanted with high doses of Si+, Ge+, and Ar+ ions (1998)
    Springer
    Semiconductors 32 (1998), S. 392-396 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The short-wavelength (400–700 nm) photoluminescence (PL) spectra of SiO2 layers implanted with Si+, Ge+, and Ar+ ions in the dose range 3.2×1016–1.2×1017 cm−2 are compared. After Ar+ implantation an extremely weak luminescence, which vanishes completely after annealing for 30 min at 400 °C or 20 ms at 1050 °C, was observed. After implantation of group-IV elements the luminescence intensities were 1 to 2 orders of magnitude higher, and the luminescence remained not only with annealings but it could also increase. The dose and heating dependences of the luminescence show that it is due to the formation of impurity clusters and this process is more likely to be of a percolation than a diffusion character. For both group-IV impurities an intense blue band and a weaker band in the orange part of the spectrum were observed immediately after implantation. The ratio of the excitation and emission energies of the blue luminescence is characteristic of oxygen vacancies in SiO2; its properties are determined by the direct interaction of group-IV atoms. On this basis it is believed that the centers of blue PL are chains of Si (or Ge) atoms embedded in SiO2. The orange luminescence remained after annealings only in the case of Si+ implantation. This is attributed directly to the nonphase precipitates of Si in the form of strongly developed nanometer-size clusters.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187417
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  • 3
    Electronic Resource
    Electronic Resource
    Investigation of the Temperature Degradation and Re-Activation of the Luminescent Centres in Rare Earth Implanted SiO〈sub〉2〈/sub〉 Layers (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 131-133 (Oct. 2007), p. 595-600 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: The temperature quenching mechanisms of the electroluminescence (EL) and the reactivation of therare earth luminescent centres by the flash lamp annealing (FLA) made after hot electron injectioninto the SiO2 layer implanted by Tb and Gd was investigated. An increase of the temperature fromroom temperature up to 150oC reduces the gate voltage of about 3 V and increases the rate of theEL quenching process and the degradation of the Metal-Oxide-Silicon Light Emitting Diode(MOSLED) structure by a of factor of three. On the other hand, the post-injection FLA reactivatesthe RE centres switched off by electrons trapped around them during hot electron impact excitation,increasing the operating time of the MOSLEDs devices
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.131-133.595.pdf
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  • 4
    Electronic Resource
    Electronic Resource
    Rare Earth Ion Implantation for Silicon Based Light Emission (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 108-109 (Dec. 2005), p. 755-760 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.108-109.755.pdf
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  • 5
    Electronic Resource
    Electronic Resource
    MOS Light Emitting Devices Based onRare-Earth Ion Implantation (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 590 (Aug. 2008), p. 117-138 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: In this article we will give an overview of our work devoted to Si-based light emissionwhich was done in the last years. Si-based light emitters were fabricated by ion implantation of rareearth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescencewas obtained for the wavelength range from UV to the visible by using a transparent top electrodemade of indium-tin oxide. In the case of Tb-implantation the best devices reach an externalquantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. Theproperties of the microstructure, the IV characteristics and the electroluminescence spectra wereevaluated. The electroluminescence was found to be caused by hot electron impact excitation ofrare earth ions, and the electric phenomena of charge transport, luminescence centre excitation,quenching and degradation are explained in detail
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.590.117.pdf
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  • 6
    Electronic Resource
    Electronic Resource
    Formation of photoluminescence centers during annealing of SiO2 layers implanted with Ge ions (2000)
    Springer
    Semiconductors 34 (2000), S. 21-26 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Photoluminescence (PL), Raman scattering, and the Rutherford backscattering of α-particles were used to study the formation of the centers of radiative-recombination emission in the visible region of the spectrum on annealing of the SiO2 layers implanted with Ge ions. It was found that the Ge-containing centers were formed in the as-implanted layers, whereas the stages of increase and decrease in the intensities of PL bands were observed following an increase in the annealing temperature to 800°C. The diffusion-related redistribution of Ge atoms was observed only when the annealing temperatures were as high as 1000°C and was accompanied by formation of Ge nanocrystals. However, this did not give rise to intense PL as distinct from the case of Si-enriched SiO2 layers subjected to the same treatment. It is assumed that, prior to the onset of Ge diffusion, the formation of PL centers occurs via completion of direct bonds between the neighboring excess atoms, which gives rise to the dominant violet PL band (similar to the PL of O vacancies in SiO2) and a low-intensity long-wavelength emission from various Ge-containing complexes. The subsequent formation of centers of PL with λm∼570 nm as a result of anneals at temperatures below 800°C is explained by agglomeration of bonded Ge atoms with formation of compact nanocrystalline precipitates. The absence of intense PL following the high-temperature anneals is believed to be caused by irregularities in the interfaces between the formed Ge nanoc-rystals and the SiO2 matrix.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187944
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions (1999)
    Springer
    Semiconductors 33 (1999), S. 523-528 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The room-temperature photoluminescence emission and excitation spectra of Si3N4 films implanted with Ge+ and Ar+ ions were investigated as a function of the ion dose and temperature of subsequent annealing. It was established that the implantation of bond-forming Ge atoms during annealing right up to temperature T a=1000 °C stimulates the formation of centers emitting in the green and violet regions of the spectrum. Implantation of inert Ar+ ions introduces predominantly nonradiative defect centers. Comparative analysis of the photoluminescence spectra, Rutherford backscattering data, and Raman scattering spectra shows that the radiative recombination is due not to quantum-well effects in Ge nanocrystals but rather recombination at the defects ≡Si-Si≡, ≡Si-Ge≡, and ≡Ge-Ge≡.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187721
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of the intensity of the short-wavelength visible photoluminescence from silicon-implanted silicon-dioxide films caused by hydrostatic pressure during annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1418-1420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of the hydrostatic pressure during annealing on the intensity of the visible photoluminescence (PL) from thermally grown SiO2 films irradiated with Si+ ions using double-energy implants at 100 and 200 keV and ion doses ranging from 1.2×1016 to 6.3×1016 cm−2. Postimplantation anneals have been carried out in an Ar ambient at temperatures Ta of 400 and 450 °C for 10 h at both atmospheric pressure and hydrostatic pressures of 0.1, 10, 12, and 15 kbar. It has been found that the intensity of the ultraviolet (∼360 nm), blue (∼460 nm), and red (∼600 nm) PL emission bands increases with raising hydrostatic pressure whereby the PL peaks retain their wavelength positions. The results obtained have been interpreted in terms of enhanced, pressure-mediated formation of ≡Si–Si≡ centers and small Si clusters within metastable regions of the ion-implanted SiO2. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121962
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  • 9
    Electronic Resource
    Electronic Resource
    Strong photoluminescence of Sn-implanted thermally grown SiO2 layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 969-971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) and PL excitation (PLE) properties of Sn-implanted SiO2 layers thermally grown on crystalline Si have been investigated and compared with those from Ge- and Si-implanted SiO2 layers. In detail, the violet PL of Sn-implanted SiO2 layers is approximately two and 20 times higher than those of Ge- and Si-implanted SiO2 layers, respectively. Based on PL, PLE, and decay time measurements, the violet PL is interpreted as due to a triplet–singlet transition of the neutral oxygen vacancy typical for Si-rich SiO2 and similar Ge- and Sn-related defects in Ge- and Sn-implanted SiO2 films. The enhancement of the blue–violet PL within the isoelectronic row of Si, Ge, and Sn is explained by means of the heavy atom effect. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289032
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  • 10
    Electronic Resource
    Electronic Resource
    Strong blue and violet photoluminescence and electroluminescence from germanium-implanted and silicon-implanted silicon-dioxide layers (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2809-2811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence (PL) and electroluminescence (EL) properties of Ge-implanted SiO2 layers thermally grown on a Si substrate were investigated and compared to those of Si-implanted SiO2 films. The PL spectra from Ge-implanted SiO2 were recorded as a function of annealing temperature. It was found that the blue-violet PL from Ge-rich oxide layers reaches a maximum after annealing at 500 °C for 30 min, and is substantially more intense than the PL emission from Si-implanted oxides. The neutral oxygen vacancy is believed to be responsible for the observed luminescence. The EL spectrum from the Ge-implanted oxide after annealing at 1000 °C correlates very well with the PL one, and shows a linear dependence on the injected current. The EL emission was strong enough to be readily seen with the naked eye and the EL efficiency was assessed to be about 5×10−4. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120143
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