Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 969-971
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The photoluminescence (PL) and PL excitation (PLE) properties of Sn-implanted SiO2 layers thermally grown on crystalline Si have been investigated and compared with those from Ge- and Si-implanted SiO2 layers. In detail, the violet PL of Sn-implanted SiO2 layers is approximately two and 20 times higher than those of Ge- and Si-implanted SiO2 layers, respectively. Based on PL, PLE, and decay time measurements, the violet PL is interpreted as due to a triplet–singlet transition of the neutral oxygen vacancy typical for Si-rich SiO2 and similar Ge- and Sn-related defects in Ge- and Sn-implanted SiO2 films. The enhancement of the blue–violet PL within the isoelectronic row of Si, Ge, and Sn is explained by means of the heavy atom effect. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1289032
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