Abstract
This paper discusses how the processing parameters affect the structural perfection of epitaxial layers of 3C-SiC grown on 6H-SiC substrates by vacuum sublimation. It shows that, at constant temperature and using virtually undisoriented substrates, decreasing the growth rate increases the size of the twinning regions in the films and reduces the total defect concentration of the 3C/6H structures. Epitaxial layers of 3C-SiC with a defect density of 101–102 cm−2 and a twinning area of up to 6 mm2 have been obtained.
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Fiz. Tekh. Poluprovodn. 31, 285–290 (March 1997)
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Andreev, A.N., Smirnova, N.Y., Tregubova, A.S. et al. Structural perfection of epitaxial layers of 3C-SiC grown by vacuum sublimation on 6H-SiC substrates. Semiconductors 31, 232–236 (1997). https://doi.org/10.1134/1.1187112
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DOI: https://doi.org/10.1134/1.1187112