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  • Artikel  (45.159)
  • Chemistry  (45.059)
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  • 1
    Digitale Medien
    Digitale Medien
    Electron and hole traps in N-GaAs crystals (1976)
    Springer
    Applied physics 11 (1976), S. 187-189 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Deep traps were measured and their electronic and optical properties were determined by junction capacitance techniques in n-GaAs crystals grown by different methods. Four electron-traps and four hole-traps were detected. An electron trap was not observed in LPE wafers. A hole trap at 0.45 eV above the top of the valence band was detected in all wafers measured here.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00920603
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  • 2
    Digitale Medien
    Digitale Medien
    Field emission of monoenergetic spin-polarized electrons (1977)
    Springer
    Applied physics 14 (1977), S. 149-153 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 79.40 ; 75.30 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Field emission from a tungsten tip, covered by a layer of crystallized ferromagnetic europium sulfide, leads to an electron beam with a current of 10−8 A, an energy width of less than 100 meV, and a spin polarization of about 0.85 at a tip temperature of 9 K. Proper annealing of the EuS layer is crucial.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00883082
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  • 3
    Digitale Medien
    Digitale Medien
    Electron mobility in compensated VPE GaAs films (1980)
    Springer
    Applied physics 23 (1980), S. 37-40 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60 ; 68.55
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(ND+NA)/(ND-NA) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20〈T〈100 [K] the data may be represented by μ∼T α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899568
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  • 4
    Digitale Medien
    Digitale Medien
    Impact ionisation inn-Type InSb at 77 K (1983)
    Springer
    Applied physics 30 (1983), S. 151-160 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Time dependent generation rate measurements for InSb at 77 K are presented. The direct results are corrected for recombination terms and care is taken to avoid complications due to the pinch effect under avalanche conditions. The results are compared with various theories, and it is shown that an improved version of Dumke's avalanche theory yields a very good description. A simple extension to Shockley's lucky electron theory is presented which also gives good results. It is concluded that only the most energetic electrons, with energies near the threshold energy, contribute significantly to the avalanche process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620534
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  • 5
    Digitale Medien
    Digitale Medien
    High-field transport properties of In0.765Ga0.235As0.5P0.5 (1983)
    Springer
    Applied physics 32 (1983), S. 39-43 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Monte-Carlo results on the velocity-field characteristics, ac diffusion-constant and thermal-noise voltages are presented for In0.765Ga0.235As0.5P0.5 at 300K. Recently available values of physical constants have been used in the calculations. The values of diffusion constants are close to those of InP but the thermal noise voltages are found to increase faster with the field. The peak velocity is 1.9 × 107 cm/s and the threshold field for negative differential mobility is about 6 kV/cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00626132
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  • 6
    Digitale Medien
    Digitale Medien
    High electric-field hall effect measurements onn-type InSb at 77 K (1982)
    Springer
    Applied physics 27 (1982), S. 107-120 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Pulsed Hall-effect experiments onn-type InSb at 77 K, with nanosecond time resolution, at magnetic inductions down to 2 mT and for electric field strengths up into the avalanche regime are reported. Results on mobility are compared with previous experimental data and various theoretical calculations. For the first time also results on the scattering factor as a function of electric field are given. A curious time dependent behaviour of the transverse voltage under avalanche conditions is reported. Along with the development of the avalanche the transverse voltage decreases and may even change sign. This phenomenon is qualitatively explained in terms of the magnetoconcentration effect and the change of contact properties under avalanche conditions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615813
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  • 7
    Digitale Medien
    Digitale Medien
    A SOGICON type instability in silicon (1984)
    Springer
    Applied physics 35 (1984), S. 145-148 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A current oscillation phenomenon in SOGICON type Si device fabricated by the use of a planar process is studied. The oscillation is generated in the region between anode and notch which is located at the center on the sample. A considerably high electric field is observed in the notch region. Considering the hot-electron effect due to the high electric field, the mechanism underlying the current oscillation is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616967
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  • 8
    Digitale Medien
    Digitale Medien
    Contact versus bulk noise in resistive layers (1985)
    Springer
    Applied physics 36 (1985), S. 183-187 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 02 ; 72.20 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract General formulae are derived to calculate the noise generated by a resistor of arbitrary shape. Contact and bulk noise have been taken into account. By calculating a particular example it will be shown that the influence of the contact and bulk noise can be changed by varying the resistor's shape.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616550
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  • 9
    Digitale Medien
    Digitale Medien
    Dielectric relaxation and AC conduction of an AgTlSe2 semiconductor in the solid and liquid states (1982)
    Springer
    Applied physics 29 (1982), S. 39-44 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 77 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the dielectric properties of AgTlSe2 in the solid and liquid states were carried out in a wide range of frequencies and temperatures. The material displayed dielectric dispersion, and a loss peak was observed. Cole-Cole diagrams have been used to determine the distribution parameter (a) and the molecular relaxation time (Τ). The process of dielectric relaxation (loss) and ac conduction was attributed to the correlated barrier hopping model suggested by Elliott for amorphous solids, where two carriers simultaneously hop over a barrier between charged defectD + andD − states.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618114
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  • 10
    Digitale Medien
    Digitale Medien
    Position dependence of average electron velocity in a submicrometer GaAs channel (1985)
    Springer
    Applied physics 38 (1985), S. 57-58 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The Monte Carlo method has been applied to obtain the average electron velocity at different positions of a submicrometer GaAs channel in the presence of a position independent electric field. Velocity-distance curves are presented for channel lengths of 0.1, 0.2, and 0.5 μm and for lattice temperatures of 300 and 77 K. The curves show significant effects of collisions and boundary conditions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618727
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  • 11
    Digitale Medien
    Digitale Medien
    Hole initiated impact ionization in indium antimonide (1985)
    Springer
    Applied physics 38 (1985), S. 145-149 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The impact ionization in p-type indium antimonide at 77 K was investigated both experimentally and theoretically. The dc pulse measurements with the time resolution of 50 ps and the high-field Hall measurements produced clear evidence that the impact ionization inp-InSb is initiated by equilibrium holes. The calculated hole generation rate gives good agreement with the experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620466
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  • 12
    Digitale Medien
    Digitale Medien
    On the origin of the hot-electron instabilities inn-InSb at crossed electric and magnetic fields (1986)
    Springer
    Applied physics 39 (1986), S. 135-139 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Coherent current oscillations with frequencies of several hundreds of megahertz and microwave generation at frequencies up to 40 GHz were investigated in then-InSb samples subjected to crossed electric and magnetic fields. They are shown as being caused by electric field redistribution and negative differential mobility in high-field regions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616831
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  • 13
    Digitale Medien
    Digitale Medien
    The pre-exponential factor of the escape probability in thermally stimulated processes (1987)
    Springer
    Applied physics 43 (1987), S. 29-35 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71 ; 72.20 ; 78
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The pre-exponential factor of the transition probability of a trapped charge carrier into an excited state is evaluated from two different approaches. The semi-classical treatment based on a thermodynamical concept involves the calculation of the vibrational entropy change from the partition sum. The quantum-mechanical treatment deals with non-radiative transitions due to electron-phonon coupling. The factor is found to be explicitely dependent on both the temperature and the lattice vibration frequencies represented by a single Einstein oscillator. In addition, the results from different concepts show similar behaviour. As a consequence the effect of lattice vibrations on the position as well as on the shape of glow peaks in thermally stimulated measurements are investigated on a simple phenomenological base. The analysis of some experimental results can be performed in accordance with the theoretical predictions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615202
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  • 14
    Digitale Medien
    Digitale Medien
    Microwave dielectric properties of Ti4+/MgO and Ni2+/MgO (1985)
    Springer
    Applied physics 36 (1985), S. 63-65 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 66 ; 72.20 ; 77.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616463
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  • 15
    Digitale Medien
    Digitale Medien
    Quantum mechanical treatment of the escape probability from traps in thermally stimulated processes (1985)
    Springer
    Applied physics 37 (1985), S. 165-170 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71 ; 72.20 ; 78
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617501
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  • 16
    Digitale Medien
    Digitale Medien
    Electrophotographic multi-layer plates based on vacuum-evaporated cadmium sulphide and polyethylene (1985)
    Springer
    Applied physics 37 (1985), S. 243-246 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.20 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A new possibility for using vacuum-evaporated CdS thin films in combination with a suitable organic polymer (e.g., polyethylene) in electrophotography is described. The advantages of a multi-layer type sample are discussed in terms of deep bulk trapping of the photogenerated free carriers, injected in the polymer. A formula is derived, which links the initial rate of surface potential decay with the trapping range in unit fieldμ 0τ. Using it and the data for the initial rates of surface potential decay of two samples (a double-layer and a multi-layer one), the trapping range for the vacuum-evaporated polyethylene films is determined.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614824
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  • 17
    Digitale Medien
    Digitale Medien
    Hydrogenated amorphous silicon films obtained by a low pressure dc glow discharge (1988)
    Springer
    Applied physics 46 (1988), S. 207-213 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 72.20 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Films of a-Si: H have been deposited by means of a dc hot cathode discharge of SiH4 with electrostatic confinement at a pressure as low as 0.4 Pa. The plasma used is quite quiescent as has been observed by means of reproducible Langmuir probe measurements. Substrates have been placed at different locations in between the electrodes, some of them facing the anode and the others facing the cathode. Films deposited on substrates facing the cathode present a granular, non-columnar, structure, an IR spectrum with only SiH absorption peaks, and a very low photoresponse. Films deposited on substrates facing the anode have a similar IR spectrum but are homogeneous, have lower hydrogen content, and present a high photoresponse. The optical absorption coefficientα shows in all samples theαnE=C(E−E0) x behaviour, but with exponentx=3 and notx=2 as is usually considered in a-Si∶H.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00939265
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  • 18
    Digitale Medien
    Digitale Medien
    Electrical properties of the AgTlSe2 semiconductor in the liquid state (1982)
    Springer
    Applied physics 28 (1982), S. 109-111 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical conductivity and thermoelectric power of AgTlSe2 have been investigated as a function of temperature from 390° C up to 590° C. The experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [12]. Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in localized states near the band edge.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617139
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  • 19
    Digitale Medien
    Digitale Medien
    The effect of H-dilution on the transport properties of doped a-Si1−x Ge x : H alloys (1989)
    Springer
    Applied physics 49 (1989), S. 165-169 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract This paper is concerned with the optimization of growth conditions for a-Si1-x Ge x :H alloys. It is shown that H-dilution of source gases selectively improves the band transport of electrons without significantly affecting the recombination center density or the band transport of holes. It is further shown that the beneficial effects of H-dilution are most pronounced in alloys with comparable densities of Si and Ge.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616295
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  • 20
    Digitale Medien
    Digitale Medien
    AC electrical behaviour of a Pb2CrO5 ceramic sample with surface electrodes (1989)
    Springer
    Applied physics 49 (1989), S. 665-670 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 72.80J ; 77.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract ac measurements (1 Hz–10 kHz) have been carried out on a Pb2CrO5 ceramic sample (with surface electrodes) at room temperature as a function of voltage and intensity of visible light illuminating the sample. Cole-Cole complex impedance plots show that the electrical behaviour of Pb2CrO5 is strongly modified when the sample is illuminated. The bulk conductance of the sample is found to increase with increasing light intensity indicating that this dielectric material becomes semiconducting due to the photogeneration of free charge carriers in the conduction band. The dielectric constant of the sample is enhanced by illumination probably due to light-dependent space charge effects in a manner where the dielectric's relaxation time (τ=RC=0.7 ms) remains constant with light intensity. On the other hand, both the bulk conductance and geometrical capacitance of the sample have been found to be almost independent of the applied voltage.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616991
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  • 21
    Digitale Medien
    Digitale Medien
    Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source (1990)
    Springer
    Applied physics 51 (1990), S. 344-346 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 73.60 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An n-type semiconducting diamond film has been synthesized by the hot filament CVD method using diphosphorus pentaoxide as the doping source. The obtained film was identified as polycrystalline diamond containing few sp2 components by means of several methods including Raman spectroscopy. From measurements of the Hall effect and the Seebeck effect, the film was found to be an n-type semiconductor.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324317
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  • 22
    Digitale Medien
    Digitale Medien
    Autocompensation doping in light-soaked and in radiation-damaged a-Si:H (1991)
    Springer
    Applied physics 52 (1991), S. 335-338 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324775
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  • 23
    Digitale Medien
    Digitale Medien
    Switching and memory effects in semiconducting chalcogenide glasses Bi29Tl35Se36 (1991)
    Springer
    Applied physics 53 (1991), S. 218-221 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The switching effect in bulk semiconductor glasses Bi29Tl35Se36 was investigated. The switching (threshold) voltage V th varies exponentially with the temperatures. Moreover V th was found to increase linearly with thickness; annealing of the samples improves the I–V characteristics and V th decreases with the annealing temperature. The experimental results were attributed to an electrothermal mechanism involving joule heating of a current channel.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324255
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  • 24
    Digitale Medien
    Digitale Medien
    Accumulation and annealing of implantation damage in a-Si:H (1991)
    Springer
    Applied physics 53 (1991), S. 235-240 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.40 ; 61.80 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Hydrogenated amorphous silicon (a-Si:H) films have been irradiated with H+, B+, P+, and Ar+ ion beams. The accumulation and the annealing of irradiation-induced defects has been investigated through a series of electronic transport and PDS measurements. We find that for all projectiles damage accumulation is dominated by atomic displacement collisions with the damage saturating for energy transfers in excess of about 10 eV/target atom. Annealing at elevated temperatures causes the conductivity of doped and irradiated a-Si:H films to increase according to stretched exponential decay curves. All annealing parameters derivable from such fits scale with the energy originally dissipated into atomic displacement collisions. For energy transfers up to 10 eV/target atom the activation energy for annealing increases up to a saturation value and, at the same time, an increasing fraction of the irradiation-induced defects becomes stable against annealing at moderate temperatures (T a〈250° C). We discuss these results with respect to damage accumulation data in crystalline silicon (c-Si) and with regard to the annealing of metastable defects in a-Si:H.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324258
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  • 25
    Digitale Medien
    Digitale Medien
    Solid ionic conductor/semiconductor junctions for chemical sensors (1993)
    Springer
    Applied physics 57 (1993), S. 37-43 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 72.20 ; 73.20 ; 73.30 ; 85.80
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The potential drop at solid ionic conductor/semiconductor contacts responds to partial pressure changes of gases since the Fermi level of the semiconductor depends on the adsorbed species and equilibrates with that of the ionic conductor. In an alternative consideration, the semiconductor acts as a catalyst for the reaction of the mobile ions of the solid ionic conductor with the adsorbed species. The junction is employed as a chemical sensor for the detection of CO2 by using NASICON as solid electrolyte and doped SnO2 as semiconductor. The device is applicable even at room temperature with fast response time. Mechanisms of the response of the junction to gases are discussed in detail. The principle of employing solid ionic conductor/semiconductor junctions for sensors is in general applicable for many gases.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00331214
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  • 26
    Digitale Medien
    Digitale Medien
    Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K (1995)
    Springer
    Applied physics 61 (1995), S. 389-395 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The Hall mobility of undoped n-type conducting SrTiO3 single crystals was investigated in a temperature range between 19 and 1373 K. Field calculations were used to estimate the influence of sample shape and electrode geometry on the measured values. Between 19 and 353 K samples, which were quenched under reducing conditions, show an impurity scattering behavior at low temperature and high carrier concentrations and a phonon scattering mechanism at room temperature. In this temperature region, no carrier-density-dependent mobility was found. In conjunction with measurements of the mass difference before and after reoxidation, the oxygen deficiency and the oxygen vacancy concentration could be determined. The oxygen vacancies proved to be singly ionized. Above 873 K, Hall mobility and carrier concentration had been determined as a function of both oxygen partial pressure and temperature for the first time. In this temperature range the mobility does not depend on carrier concentration, but shows aT −1.5 dependence.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01540113
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  • 27
    Digitale Medien
    Digitale Medien
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80 ; 78.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538389
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  • 28
    Digitale Medien
    Digitale Medien
    Effect of in addition on some physical properties of the As2Se3 amorphous system (1995)
    Springer
    Applied physics 60 (1995), S. 233-238 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73.60 ; 72.20 ; 61.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effect of In content on do electrical conductivity and DTA of the system (As2Se3)1-x. Inx, x=0, 0.01, 0.05, has been studied. The electrical energy gap was found to increase for an In content 0.01% and decrease for an In content 0.05%. The samples exhibit the three conduction mechanisms proposed by Mott and Davis. The activation energy was calculated for each mechanism. The effect of heating rate on the transition temperatures (T g,T c,T m) was studied and the variation of the crystallization-peak position was used to calculate the activation energy and the order of the crystallization process.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538251
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  • 29
    Digitale Medien
    Digitale Medien
    A new structure of In-based ohmic contacts ton-type GaAs (1996)
    Springer
    Applied physics 62 (1996), S. 241-245 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 72.20 ; 73.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Electrical, structural and reaction characteristics of In-based ohmic contacts ton-GaAs were studied. Attempts were made to form a low-band-gap interfacial phase of InGaAs to reduce the barrier height at the metal/semiconductor junction, thus yielding low-resistance, highly reliable contacts. The contacts were fabricated bye-beam sputtering Ni, NiIn and Ge targets on VPE-grownn +-GaAs film (≈1 μm, 2 × 1018 cm−3) in ultrahigh vacuum as the structure of Ni(200 Å)/ NiIn(100 Å)/Ge(40 Å)/n +-GaAs/SI-GaAs, followed by rapid thermal annealing at various temperatures (500–900°C). In this structure, a very thin layer of Ge was employed to play the role of heavily doping donors and diffusion limiters between In and the GaAs substrate. Indium was deposited by sputtering NiIn alloy instead of pure In in order to ensure In atoms to be distributed uniformly in the substrate; nickel was chosen to consume the excess indium and form a high-temperature alloy of Ni3ln. The lowest specific contact resistivity (ϱ c) of (1.5 ± 0.5) × 10−6 cm2 measured by the Transmission Line Method (TLM) was obtained after annealing at 700°C for 10 s. Auger sputtering depth profile and Transmission Electron Microscopy (TEM) were used to analyze the interfacial microstructure. By correlating the interfacial microstructure to the electronical properties, In x Ga1− xAs phases with a large fractional area grown epitaxially on GaAs were found to be essential for reduction of the contact resistance.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01575088
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  • 30
    Digitale Medien
    Digitale Medien
    Anomalous plasma diffusion transverse to high magnetic fields in InSb (1976)
    Springer
    Applied physics 10 (1976), S. 33-39 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Investigations on the ambipolar diffusion of an electron-hole plasma transverse to a magnetic field have been carried out in InSb. A plasma layer, produced at the surface of the sample by a short laser pulse, was moved through the sample in crossed electric and magnetic fields by the Lorentz force. From the broadening of the plasma layer we found at 80K an enhanced diffusion coefficient which decreased proportional to 1/B for magnetic fields higher than 1T, constrary to the expected classical 1/B 2 dependence. Furthermore, the diffusion coefficient was strongly dependent on the electric field. The ambipolar drift velocity, measured simultaneously showed a classical behaviour. Together with the enhanced diffusion we observed instabilites in the electric potential. The instability threshold decreased towards the cathode.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00929526
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  • 31
    Digitale Medien
    Digitale Medien
    A simple theory of the laser-induced damage in semiconductors (1977)
    Springer
    Applied physics 12 (1977), S. 31-37 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 42.60 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A simple theory is presented for the laser-induced damage in semiconductors in the range of low irradiation intensities. This theory avoids the solution of coupled differential equations, and takes into account characteristic physical properties of semiconductors—i.e. energy gap, carrier lifetime, and surface recombination velocity. The deduced equations permit us to estimate the damage threshold, or the minimum irradiation time required for damage to occur. Comparison is made with some experimental results reported in the literature and a reasonable agreement is found.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00900065
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  • 32
    Digitale Medien
    Digitale Medien
    Determination of localized level energies by a statistics of the fermi-level (1977)
    Springer
    Applied physics 12 (1977), S. 379-381 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.55 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract For a very large number of samples of a semiconducting material, which is not intentionally doped, the Fermi-level coincides approximately with the respective energy levels of the accidential impurities and defects. Based on this fact, the energies of localized levels were determined from a statistic of the Fermi-level in CdSe platelets. These energies agree very well with most of the values obtained with different methods by other authors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00886040
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  • 33
    Digitale Medien
    Digitale Medien
    Electronic conduction mechanisms of Cs- and B-implanted SiO2-films (1977)
    Springer
    Applied physics 12 (1977), S. 137-148 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.50 ; 72.20 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00896139
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  • 34
    Digitale Medien
    Digitale Medien
    HF sputtered indium oxide films doped with tin (1978)
    Springer
    Applied physics 16 (1978), S. 381-390 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 73 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Indium-tin-oxide films (ITO films) sputtered in Ar-atmosphere with and without addition of oxygen reveal an irreversible increase in conductivity during annealing in vacuum. This annealing process increases drastically the density of free electrons, while the Hall mobility changes only slightly. Below the annealing temperature the temperature dependence of the conductivity is reversible. In films with low density of free electrons, which behave like non-degenerated semiconductors, two activation energies for the mobility could be found. The irreversible changes, observed during annealing in the vacuum, are explained by diffusion of oxygen from the interior of the film to the surface, followed by desorption of the oxygen from the surface into the vacuum. The excess oxygen in the non-stoichiometric films plays the role of electron traps. The irreversible effects during annealing in the vacuum are partly reversible in the long run. If the annealed films are exposed to oxygen or air their conductivity decreases because of diffusion of oxygen from the surface into the film.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00885863
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  • 35
    Digitale Medien
    Digitale Medien
    Arsenic-implanted polysilicon layers (1981)
    Springer
    Applied physics 24 (1981), S. 197-200 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The diffusion behavior of implanted arsenic in polycrystalline silicon was investigated, using backscattering and electrical measurements. The diffusion coefficient isD=8.5×10−3 exp (−2.74/kT) for polycrystalline silicon deposited on freshly-etched silicon andD=1.66 exp (−3.22/kT) for the deposition on silicon having natural oxide. At the interface to the single-crystalline silicon, a pile-up of arsenic occurs, which depends also on the surface treatment prior to the deposition of the polycrystalline silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00899755
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  • 36
    Digitale Medien
    Digitale Medien
    Oscillatory effective mass in degenerate narrow-gap semiconductors in a quantizing magnetic field (1981)
    Springer
    Applied physics 25 (1981), S. 105-108 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 72.20 ; 72.15
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An attempt is made to study the effect of a quantizing magnetic field on the effective electron mass in degeneraten-type narrow-gap semiconductors at low temperatures. It is found, takingn-Hg1−x Cd x Te as an example, that the effective electron mass shows an oscillatory magnetic-field dependence as is expected because of the dependence of the effective mass in degenerate non-parabolic bands on Fermi energy which oscillates with changing magnetic field. The amplitude of oscillations is, however, found to be significantly influenced by the alloy composition whereas the period is found to be independent of the band non-parabolicity, i.e. of the compositional parameter in ternary semiconductors.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00901280
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  • 37
    Digitale Medien
    Digitale Medien
    Hot electron diffusion in CdTe (1983)
    Springer
    Applied physics 30 (1983), S. 189-193 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The parallel and transverse components of diffusion constants of electrons in CdTe have been computed for fields of 30, 40, and 50 kV/cm using the Monte Carlo method. Results are presented for the velocity autocorrelation function and for the ac diffusion constants for two models of energy band structure and scattering constants, used earlier in the literature. The diffusion constants as obtained from the two models are significantly different, but none are in agreement with the available experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620539
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  • 38
    Digitale Medien
    Digitale Medien
    Thresholds for impact ionisation in InSb at 77K (1981)
    Springer
    Applied physics 26 (1981), S. 157-163 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The thresholds in energy for 5 different impact ionisation processes in InSb at 77K were calculated on the basis of a critical review of the available bandstructure data for largerk values. An accurate threshold value of 243 meV ± a few meV is given for the main process. It is shown that production of light holes by impact ionisation is highly improbable. It is suggested that double ionisation and light hole initiated ionisation may be equally important in interpreting quantum efficiency data. Impact ionisation by L-band electrons may contribute significantly to the avalanche in Gunn domains, explaining the rapid quenching of the latter.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614750
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  • 39
    Digitale Medien
    Digitale Medien
    Electrical conductivity and thermoelectric power of liquid selenium doped with thallium and indium (1982)
    Springer
    Applied physics 27 (1982), S. 161-165 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The temperature dependence of the electrical conductivity and thermoelectric power of liquid selenium with thallium and indium additives have been studied. Large variations appear in the electrical conductivity and thermoelectric power, where Tl and In additives favourp-type conduction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616667
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  • 40
    Digitale Medien
    Digitale Medien
    On the annealing behaviour of the Staebler-Wronski effect ina-Si:H (1984)
    Springer
    Applied physics 35 (1984), S. 9-12 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The kinetics of the Staebler-Wronski effect ina-Si:H were investigated experimentally. The rate of recovery from the illuminated state B to the annealed state A was observed at various temperatures in undoped,n- andp-dopeda-Si:H. The data can be characterized by a thermally activated relaxation time with an activation energy decreasing with increasing doping concentration. The results are compared with previous data and existing models.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620293
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  • 41
    Digitale Medien
    Digitale Medien
    Impact ionisation probability in InSb (1982)
    Springer
    Applied physics 29 (1982), S. 125-132 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An exact analytical expression for the impact ionisation probability for the main ionisation process in a semiconductor with a Kane-type bandstructure is derived. In a parabolic approximation the integrals involved can be evaluated and the result reduces to the simple relationv i (E)=C(E−E i )2Θ(E−E i ) whereC is a material constant related to the transition matrix elements. From experimental results on the photo-quantum efficiency we can estimate the value ofC for InSb near 77 K, i.e.ħC ≈ 0.012 eV−1. It is concluded that the impact ionisation probability cannot be described with a unit step function at the threshold energy as was done in many theories on the avalanche effect. The (effective) threshold is smooth and a more detailed description, as derived here, is necessary.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617768
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  • 42
    Digitale Medien
    Digitale Medien
    MITATT mode in DDR heterostructure Impatt (1987)
    Springer
    Applied physics 42 (1987), S. 303-309 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Large signal characterisation of double heterostructure DDR Impatt diode has been carried out in the millimeter-wave range considering the MITATT mode of operation. The structure of the device is p+-p2-p1-n1-n2-n+ where impact ionisation and tunneling takes place in the p1-n1 region. In this study we have considered two well-known heterostructures, e.g., InP/GaInAs/InP and InP/InGaAsP/InP and one nonconventional structure GaAs/InP/GaAs. The theoretical results of the performances of these devices as regards of output power, efficiency, and negative conductance revealed that the structures are quite promising as the source of power in the millimeter-wave range. The analysis may be used for other mm wave DDR heterostructure Impatts.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616568
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  • 43
    Digitale Medien
    Digitale Medien
    Temperature dependence of dielectric behaviour of illuminated HgI2 (1987)
    Springer
    Applied physics 43 (1987), S. 61-63 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80J ; 70.90
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The real part of the dielectric constant was studied in the temperature range of 340 to 10 K, and at frequencies that range from 1 to 104 Hz. The dipole contribution to the dielectric constant has been found at temperatures lower than 110 K while the space-charge contribution due to the increase of crystal defects is dominant at temperatures higher than 290K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615207
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  • 44
    Digitale Medien
    Digitale Medien
    Mechanism for nonlinearI-V behaviour and the temperature dependence of threshold switching in the Se-Te-Sn system (1988)
    Springer
    Applied physics 46 (1988), S. 299-303 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The nonlinearI–V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease inV th with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI–V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01141596
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  • 45
    Digitale Medien
    Digitale Medien
    Frequency dependent conductivity in As2Se3 and As2Se3 + 15% Sb (1990)
    Springer
    Applied physics 51 (1990), S. 481-485 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Dc and ac measurements were performed on bulk samples of undoped and 15% Sb doped As2Se3 as a function of temperature (90–400 K) and frequency (103–106 Hz). The dc results show an activated conductivity dependence on temperature with an activation energy of 0.8 eV above room temperature. The ac results give a temperature dependent frequency exponent s. The temperature dependence of G ac is discussed in terms of the mechanisms involved. Results are compared with the predictions of the Quantum Mechanical Tunnelling and Correlated Barrier Hopping models. It is found that doping increases the dc conductivity but has no effect on the ac conductivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324730
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  • 46
    Digitale Medien
    Digitale Medien
    Residual non-idealities in the almost ideal silicon p-n junction (1990)
    Springer
    Applied physics 50 (1990), S. 273-286 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 85.30 ; 72.20 ; 73.40 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The reproducible, mass production of almost ideal silicon p-n junctions has allowed two new phenomena to be discovered: a pure generation without recombination, and a slow capacitance-free current transient. Our present knowledge of these phenomena is reviewed and speculations about the centres responsible for them are discussed; these centres seem to be connected to ultimate, unavoidable properties of the silicon p-n junction rather than to unwanted impurities.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324494
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  • 47
    Digitale Medien
    Digitale Medien
    Surface and bulk electrical properties of the hematite phase Fe2O3 (1991)
    Springer
    Applied physics 53 (1991), S. 310-316 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.00 ; 72.00 ; 72.20 ; 73.30 ; 73.40 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Electrical properties of Fe2O3 were studied by using several electrical methods such as electrical conductivity, thermopower (Seebeck effect) and work function. The studies were performed at elevated temperatures (1053–1153 K) and under controlled oxygen activity (102∓105 Pa). Samples of different thickness varying between 103 nm and 1 mm were taken for the measurements of both electrical conductivity and thermopower. It has been found that the exponent of the po2 dependence resulting from the work function measurements (1/n φ) is about 1/2. Both thermopower and electrical conductivity data are well consistent with work function data for the thin film (1000 nm) of Fe2O3. The charge transport in Fe2O3 has been interpreted in terms of small polaron mechanism. Analysis of measured electrical parameters, regarding the thickness of studied specimens, indicates that the near-surface layer of Fe2O3 exhibits much higher deviation from stoichiometry than the bulk phase and resulting strong interaction between charge carriers. This effect has been interpreted in terms of segregation of intrinsic lattice defects to the surface, and presumably also to grain boundaries, of Fe2O3.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00357193
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  • 48
    Digitale Medien
    Digitale Medien
    Electrical properties of p +/n + In0.53Ga0.47As tunnel diodes grown by liquid phase epitaxy (1993)
    Springer
    Applied physics 56 (1993), S. 153-155 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30 ; 81.10
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract p +/n + In0.53Ga0.47As tunnel diodes were prepared by liquid phase epitaxy and their electrical properties were characterized. These devices exhibit large forward conductances (2.59×103 Ω−1 cm−2), high peak current densities (793 A/cm2) and large peak to valley current ratios (16.2). These devices offer great promise as intercell ohmic contacts (IOCs) for InP-based, onolithic multijunction solar cells.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00517683
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  • 49
    Digitale Medien
    Digitale Medien
    In-situ formation of p-n junctions in semiconducting TiO2 (1994)
    Springer
    Applied physics 59 (1994), S. 239-243 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.60 ; 85.30 ; 66.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Application of small voltages in the range from 0.5 V to 1 V to an originally homogeneously Fe-doped (0.5 mol-%) TiO2 semiconductor at temperatures between 700° C and 750° C caused the formation of a p-n junction within the sample. This is indicated by a change of the U-I characteristics from a symmetrical to a diode type behavior. By inversion of the polarity of the applied voltage, the p-n junction could be removed. This process is completely reversible. The results are explained by an asymmetric change in the concentration of lattice defects, which act as dopants in addition to the extrinsic dopants, caused by the application of the voltage to the sample.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00348226
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  • 50
    Digitale Medien
    Digitale Medien
    Ultraviolet-laser-induced permanent electrical conductivity in polyimide (1993)
    Springer
    Applied physics 56 (1993), S. 275-281 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.60 ; 81.60.Jw
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract When polyimide (Kapton) is irradiated by a krypton fluoride (KrF) laser, an increase of the electrical conductivity of up to 16 orders of magnitude is observed. In the high conduction regime, the resistivity is about 0.1 Ω cm, the current voltage characteristic is ohmic and the contacts of gold and silver with the irradiated conducting polymer are also ohmic. The conduction mechanism is phonon-assisted variable range hopping, evident from the observed temperature and electric field dependence of the resistivity at low conductivities. The laser-induced conductivity depends on the ambient atmosphere during irradiation. Transmission spectroscopy in the visible region and infrared Fourier transform spectroscopy have been used to characterize the material. A thermal mechanism is proposed for the formation of conducting polyimide, by excimer-laser irradiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00539487
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  • 51
    Digitale Medien
    Digitale Medien
    Microwave evaluation of the conductive filler particles of carbon black-rubber composites (1993)
    Springer
    Applied physics 56 (1993), S. 299-302 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.40 ; 82.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Samples of carbon black loaded nitrile rubber are measured at microwave frequencies (waveguide transmission and reflection). The observed dielectric relaxation is interpreted using a two phase effective medium model (Böttcher formula). The two phases are identified with free rubber as insulating matrix and a conductive filler of a priori unknown parameters (volume fraction, permittivity, conductivity). Supported by SEM and de measurements the results allow to associate the filler phase with adsorbate covered carbon black. In this way the bulk conductivity of carbon black loaded rubber can be explained by (statistical) percolation, which has been not possible taking pure carbon black particles as the percolating elements. Because the effective conductivity of the filler particles deduced from the microwave measurements characterizes mainly the particles' surface it is supposed that the adsorbate may become conductive by the chemical and physical interactions of polymer and carbon black during the preparation of the composite. Reference is made to the doping of rubber resulting in conductivities of the same order of magnitude.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324345
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  • 52
    Digitale Medien
    Digitale Medien
    Magnetoplasma waves in anisotropic semiconductors and semimetals (1976)
    Springer
    Applied physics 10 (1976), S. 325-330 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The propagation of electromagnetic waves in solids with electron and hole energy surfaces of second order placed in a magnetic field is investigated. The deduced dispersion relation is compared with measurements of the Alfvén wave velocity in bismuth. The theoretical and experimental results are in good agreement. In particular, it is clearly shown that for special orientations of the magnetic field switching from one mode to the other occurs. Parameters of the energy surfaces of bismuth are given by fitting the theoretical curves to the measured phase velocity diagrams.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00920617
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  • 53
    Digitale Medien
    Digitale Medien
    Mode mixing of Alfvén waves in bismuth (1976)
    Springer
    Applied physics 11 (1976), S. 385-386 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We have investigated the propagation of Alfvén waves in bismuth at 4.2 K using a microwave interferometer at 34.45 GHz and applying magnetic fields up to 1 Tesla. At certain angles between the external magnetic field and the direction of propagation of the Alfvén waves in the crystal, we have observed intense oscillations of the amplitude and the phase of the interferometer curves. We explain these oscillations as due to a superposition of the two Alfvén wave modes. The phase velocities of the two modes are calculated from the measurements. Comparing them with a general dispersion relation we find good agreement between the theoretical phase velocities and the experimental values.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00919369
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  • 54
    Digitale Medien
    Digitale Medien
    On the determination of thermal ionization energy of deep centers from ESR data (1983)
    Springer
    Applied physics 30 (1983), S. 105-107 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 76.30 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract It is shown that the skin effect due to thermal generation of free carriers may affect the ESR signal more than deep center depopulation. Experimental results for 0.33 eV deep Eu2+ donor in CdF2 crystals are presented, to show the way in which the thermal energy of deep centers is deduced from the ESR data.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614911
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  • 55
    Digitale Medien
    Digitale Medien
    Electron transport in sub-micron GaAs channels at 300 K (1983)
    Springer
    Applied physics 31 (1983), S. 65-70 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.60 ; 85.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Transient velocity-field characteristics have been computed for GaAs channels having lengths of 0.1, 0.2, 0.5, 1, and 20 μm for electric fields between 1 and 50 kV/cm at 300 K. The results are compared with earlier calculations and the significant features of the computed results are discussed. It is found that the electron motion for all channel lengths and for all fields is significantly affected by collisions. The threshold field for negative differential mobility increases, and the magnitude of the differential mobility decreases with decrease in the length of the sample. The maximum steady-state velocity increases with decrease in the length and may be as high as 5.4×107 cm/s for 0.1 μm samples.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616306
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  • 56
    Digitale Medien
    Digitale Medien
    Electrical properties of CuTlSe2 in the liquid state (1981)
    Springer
    Applied physics 26 (1981), S. 171-173 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical conductivity and thermoelectric power of CuTlSe2 have been investigated as a function of temperature up to 230 °C above its melting point. In the liquid state the experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors (Mott, 1970). Positive thermoelectric power suggests a large predominance of holes in electrical conduction. It appears that the conduction is due to holes in extended states near the band edge. It is found that the energy gap has a large temperature coefficient γ=5.5×10−4eV/K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614752
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  • 57
    Digitale Medien
    Digitale Medien
    Laser-induced free-carrier absorption in Si single crystal (1984)
    Springer
    Applied physics 33 (1984), S. 107-111 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20 ; 81
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The transmitted energy density in thin single Si crystal, wafers is measured atλ=1.06 μm as a function of the incident energy density for a Nd laser pulse of 30 ns duration. Non-linear effects begin to become important at about 0.3 J/cm2. The contribution due to free-carriers is separated from the interband one by using measurements made at low energy density and at different sample temperatures in the 20°–150 °C range. The time dependence of the free-carrier concentration and of the lattice temperature is computed for different values of the Auger constant. The experimental data in the 0.2–2.5 J/cm2 energy density range are fitted with an Auger constant of 10−30 cm6s−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617616
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  • 58
    Digitale Medien
    Digitale Medien
    Dielectric properties of titanium and gadolinium doped MgO single crystals (1982)
    Springer
    Applied physics 29 (1982), S. 29-32 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 66 ; 72.20 ; 77.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constantɛ′ is found to be independent of frequency and the ac conductivity Re{σae} agrees well with the relation Re{σae}∫Ω n ,Ω being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relationɛ″∫Ω n−1(n〈1),ɛ″ being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618112
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  • 59
    Digitale Medien
    Digitale Medien
    Passivation of high-resistivity cadmium telluride by hydrogen implantation (1987)
    Springer
    Applied physics 43 (1987), S. 47-52 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Cadmium telluride crystals grown by the Travelling Heater Method (THM) technique have been implanted with hydrogen using protons from 2 keV to 3 MeV. Electrical measurements indicate drastic changes in the concentration of defects, especially in the 0.15–0.20 and 0.45–0.60 eV bands. However, the modification induced by hydrogen depends on the starting material, implantation and annealing conditions. Furthermore, resistivity and carrier lifetime are also strongly affected by this treatment.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615205
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  • 60
    Digitale Medien
    Digitale Medien
    Photopyroelectric spectroscopy (P2ES) of electronic defect centers in crystalline n-CdS (1987)
    Springer
    Applied physics 44 (1987), S. 123-130 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Photopyroelectric spectroscopy (P2ES) of n-CdS single crystals was performed at an open circuit, and in conjunction with photocurrent spectroscopy (PCS) in the presence of an applied ac or dc transverse field. The results showed that P2ES is very sensitive to the presence of deliberately introduced subbandgap defect structures, with the P2E signal dominated by non-radiative de-excitation mechanisms at defect centers. The potential of this technique as a powerful electronic defect diagnostic tool, combined with the overall experimental simplicity, was demonstrated with mm-thick crystals used as received in an open-cell geometry.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00626412
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  • 61
    Digitale Medien
    Digitale Medien
    Transient negative photoconductivity in silicon doped with gold (1987)
    Springer
    Applied physics 43 (1987), S. 205-208 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms by an appropriate diffusion condition has been investigated. The transient negative photoconductivity could be observed with a diode doped with gold atoms under intrinsic light-pulse illumination. In the recovery process of the transient negative photoconductivity to a steady-state dark level, two kind of time constants were observed, which may be related with the emission of electrons from gold level. A dependence of the magnitude of the peak value on the ambient temperature was observed; a qualitative explanation is given.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615977
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  • 62
    Digitale Medien
    Digitale Medien
    Threshold switching effects in AgTlSe2 and CuTlSe2 films (1988)
    Springer
    Applied physics 46 (1988), S. 113-117 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Switching effects in AgTlSe2 and CuTlSe2 chalcopyrite semiconductors films have been investigated. The threshold switching voltage was found to increase linearly with the thickness, moreoverV th increases exponentially with the temperature. The rapid transition between the highly resistive and conductive states was attributed to an electrothermal origin from Joule's heating of a current channel.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00615918
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  • 63
    Digitale Medien
    Digitale Medien
    Quantitative characterization of chaotic instabilities in semiconductors (1989)
    Springer
    Applied physics 48 (1989), S. 181-188 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.70 ; 06
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A method for quantitative characterization of chaotic dynamical systems is discussed. An electronic instrument for determining the number of independent variablesk *, involved in the motion, is described. It allows one to obtain these in real time from a single observable. The suggested technique has been applied to quantification of strange attractors underlying chaotic instabilities in semi-insulating GaAs∶Cr, and n-Ge, irradiated with high energy electrons. In n-Ge, for instance, the measured numbersk * range from 2 to 4 depending on control parameters. These measurements reveal the highly deterministic nature of the observed chaotic oscillations. The physical mechanisms responsible for the current instabilities and chaotic behaviour are discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01141282
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  • 64
    Digitale Medien
    Digitale Medien
    Electrical properties and thermal conductivity of AgTlTe2 in the solid and liquid phases (1989)
    Springer
    Applied physics 48 (1989), S. 251-253 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the electrical conductivity, thermelectric power and thermal conductivity of an AgTlTe2 semiconductor in the solid and liquid states were carried out in a wide range of temperatures. In the liquid state the data analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors. Positive thermoelectric power suggests a large predominance of holes in electrical transport.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00619394
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  • 65
    Digitale Medien
    Digitale Medien
    Thermoelectric power of YBa2Cu3Ox in equilibrium with gas phases (1988)
    Springer
    Applied physics 47 (1988), S. 205-208 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 74.70 ; 72.20 ; 61.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermoelectric power (TP) and electrical conductivity (EC) measurements were performed for YEa2Cu3Ox at 1128 K under controlled oxygen partial pressure varying between 50 and 105 Pa. Three regimes are observed for the electrical properties. At low $$p_{{\text{O}}_{\text{2}} } (〈 1.6{\text{ }} \times {\text{ 10}}^{\text{2}} {\text{ }}{\text{Pa}})$$ both TP and EC remain constant with $$p_{{\text{O}}_{\text{2}} } $$ . In the medium range $$(1.6{\text{ }} \times {\text{ 10}}^{\text{2}}〈 p_{{\text{O}}_{\text{2}} }〈 7.6{\text{ }} \times {\text{ 10}}^{\text{3}} {\text{ Pa)}}$$ sharp changes of both electrical parameters occur; TP changes sign from positive above 4×102 Pa to negative below this $$p_{{\text{O}}_{\text{2}} } $$ value. In the high $$p_{{\text{O}}_{\text{2}} } $$ region (〉7.6×103 Pa) TP vs log $$p_{{\text{O}}_{\text{2}} } $$ exhibits two slopes; 5.1 below 1.5×104 Pa and 8.4 above this $$p_{{\text{O}}_{\text{2}} } $$ value. The slopes can be discussed in terms of the defect structure involving singly and doubly ionized oxygen vacancies below and above 7.6×103 Pa, respectively.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618886
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  • 66
    Digitale Medien
    Digitale Medien
    Time-resolved, hot-electron conductivity measurement using an electro-optic sampling technique (1990)
    Springer
    Applied physics 51 (1990), S. 357-360 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A picosecond electro-optical sampling technique has, for the first time, been used for measuring the high-electrical-field instabilities in a semiconductor. Current-voltage-characteristics and the high-field domain nucleation time for n-type In0.53 Ga0.47 As samples have been measured with a time resolution better than 10 ps and compared with existing theoretical calculations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324321
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  • 67
    Digitale Medien
    Digitale Medien
    High-temperature thermal evolution of SiAs precipitates in silicon (1992)
    Springer
    Applied physics 54 (1992), S. 221-224 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 64 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The thermal evolution of monoclinic SiAs precipitates at 1050° C in silicon samples implanted with 1 and 1.5×1017 As/cm2 was followed by transmission electron microscopy (TEM) and secondary neutral mass spectrometry (SNMS). These experiments show, for the first time, the coexistence of two different states of As in silicon, i.e., the electrically active and the inactive mobile dopant, in equilibrium with monoclinic SiAs precipitates. Moreover, they provide, for the saturation concentration of As in silicon, which includes both these states, a value of 3×1021 cm−3 at 1050° C.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00323840
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  • 68
    Digitale Medien
    Digitale Medien
    Relaxation of polarisation (1992)
    Springer
    Applied physics 55 (1992), S. 135-138 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 77.40 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The relaxation of a wide range of solid dielectrics follows fractional power laws in frequency known as the “universal” or constant phase angle law. Instead of analysing the time dependence of the microscopic relaxations of dipoles or of charges in terms of the fluctuation dissipation theorem, we make use of the unique property of the universal law that the ratio of the macroscopic energy lost per radian to energy stored in the system under an alternating field drive is independent of frequency. We show that in solids a sufficient condition for this “energy criterion” to be satisfied is that the energy loss per microscopic reversal is the same regardless of the rate of reversals. The significance of this is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00334211
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  • 69
    Digitale Medien
    Digitale Medien
    Electrical and thermal properties of chalcogenide glass system Se75Ge25−x Sb x (1992)
    Springer
    Applied physics 55 (1992), S. 167-169 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 66.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The dc and thermal conductivities of five different compositions of the chalcogenide glass system Se75Ge25−x Sb x have been studied in a temperature range below T g. The dc conductivity results indicate that each composition has a single activation energy in the considered temperature range. The coefficient of thermal conductivity increased linearly with temperature below T g for the compositions investigated. The increase of Sb content in the chalcogenide glass system leads to an increased coefficient of electrical conductivity σ, an increased coefficient of thermal conductivity ψ, and to a decreased activation energy E σ and pre-exponential factor σ0. The observed compositional dependencies of σ and E σ have been correlated with the increase of weak bond density and the decrease of covalent bond density in the structure of the compositions investigated with increasing Sb content at the expense of Ge content. The decrease in σ0 and the increase in ψ has been, respectively, correlated with the decrease in mobility and the increase in phonon velocity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00334218
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  • 70
    Digitale Medien
    Digitale Medien
    Heavy carbon doping of AlAs by elemental-source molecular beam epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 217-219 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 68.55 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Heavily carbon-doped AlAs films with free-hole concentrations in excess of 1019 cm−3 have been grown by conventional molecular beam epitaxy using elemental sources. The hole concentration in AlAs:C saturates at 6×1019 cm−3 without any detectable deterioration of the smooth surface morphology and of the structural properties. At very high carbon concentrations the lattice contraction due to the smaller covalent radius of carbon leads to an in-plane lattice constant of the AlAs:C films which is even smaller than that of the GaAs substrate. The high freehole concentration and the tunability of the lattice constant are important for application in p-type GaAs/AlAs Bragg reflectors in surface emitting lasers having a low series resistance and a significantly reduced lattice mismatch.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00332591
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  • 71
    Digitale Medien
    Digitale Medien
    Effect of annealing on the electrical properties and refractive index of HgI2 single crystals (1995)
    Springer
    Applied physics 60 (1995), S. 437-440 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 78.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The effect of annealing on the electrical properties and the refractive index of red mercuric iodide (HgI2) single crystals is investigated. The ac-impedance and phase angle were measured in the frequency range from 100 Hz to 10 kHz at different annealing temperatures. The ac-conductivity, dielectric constants, loss tangent and the refractive index as a function of frequency are determined. The results are discussed in terms of structural changes taking place as a result of the heat treatment of the HgI2 single crystals.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538766
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  • 72
    Digitale Medien
    Digitale Medien
    Photo-magneto-electric effect in semi-insulating GaAs: carrier lifetimes and influence of the defect structure (1995)
    Springer
    Applied physics 60 (1995), S. 509-514 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 72.80.Ey
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report the investigation of the Photo-Magneto-Electric effect (PME) in semi-insulating Liquid-Encapsulated (LEC-) grown GaAs crystals, using both intrinsic and impurity excitation. The role of the majority and minority carriers on the conductivity phenomena was evaluated and the lifetimes of electrons and holes were determined depending on excitation conditions. Anomalously high PME voltages, reaching in some cases some volts, were measured, which demonstrate a sharp drop in the temperature region 320–360K. The observed changes are discussed supposing that the influence of the non-homogeneous defect structure of the samples is essential.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538777
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  • 73
    Digitale Medien
    Digitale Medien
    Electrical conductivity and thermoelectric power of AgInSe2 in the solid and liquid states (1995)
    Springer
    Applied physics 60 (1995), S. 77-79 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The electrical conductivity and thermoelectric power of AgInSe2 have been investigated as a function of temperature from 420°C to 950°C. Experimental data are analyzed in terms of a model developed for the density of states and electrical transport in solid amorphous semiconductors [1]. The activation energy calculated from electrical conductivity data is found to be 0.06 eV for the solid and 0.37 eV for the liquid phase. Moreover, the coefficient of the linear decrease of the energy gap with temperature was found to be 1.96×10−4 eV/K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01577617
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  • 74
    Digitale Medien
    Digitale Medien
    Determination of the impurity concentration in heavily doped inhomogeneous semiconductors from the measurement of the low-temperature conductivity (1995)
    Springer
    Applied physics 61 (1995), S. 115-118 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 81.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A method has been developed for determining the effective concentration of shallow impuritiesN * reponsible for the low-temperature conductivity in the vicinity of the metal-insulator transition for inhomogeneous samples of n-Ge:As. The method is based on the measurement of two ratios of sample resistance γ-R(4.2 K)/R(300 K), β=R(2.0 K)/R(4.2 K) and the conductivity σ(4.2 K). The next step consists of plotting and σ(4.2) vs β. Assuming that β is the most reliable parameter, one can calculate, after an averaging procedare, the corrected values ofγ *,π *(4.2) and the resistivity at room temperatureρ *(300)=[γ * π *(4.2)]−1. Finally, using the known dependence ρ(300)=f(N) for homogeneous samples, one can obtain the values ofN *. The dependences ofN * on β and on γ are plotted. The scaling behavior of the conductivity of the Ge:As samples with corrected values ofπ *(4.2) andN * has been observed down toT=100 mK.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538375
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  • 75
    Digitale Medien
    Digitale Medien
    Distinction between avalanche and tunneling breakdown in one-sided abrupt junctions (1978)
    Springer
    Applied physics 16 (1978), S. 191-194 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF t. It is shown thatF t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm eff + /m o and the semiconductor energy band gapE g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00930386
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  • 76
    Digitale Medien
    Digitale Medien
    Photoconductivity and Hall-effect of iron-diffused silicon (1978)
    Springer
    Applied physics 17 (1978), S. 137-140 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 71.55 ; 72.20 ; 72.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Silicon diffused with iron is investigated by photoconductivity and Hall-effect measurements. We used three different iron sources, namely FeCl3, an evaporated iron film, and Fe by ion implantation. Iron exhibits inp-type, boron-doped 1 Ωcm silicon and in high-resistivity (1 kΩcm) silicon an acceptor level ofE c -0.55 eV. No influence of the iron was observed inn-type, phosphorous-doped 0.5 Ωcm silicon. NoE v +0.4 eV level was observed. It is pointed out that iron in silicon must be regarded in connection with at least three parameters, namely the quenching rate, the chemical identity of the shallow dopant, and the initial resistivity of the silicon samples.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00885245
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  • 77
    Digitale Medien
    Digitale Medien
    One-dimensional ionic conduction in solid Ag2 Tl6I10 (1978)
    Springer
    Applied physics 17 (1978), S. 233-237 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 66.30 ; 72.20 ; 82.45
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The ionic and electronic conductivities of Ag2Tl6I10 single crystals have been studied as a function of crystallographic orientation and temperature from 20 to 135°C. EMF as well as AC and DC techniques have been employed. The highly anisotropic material is predominantly an Ag+-ion conductor parallel toc-direction, with the Ag+ ions moving through linear channels that are not interconnected. The conductivity σ‖c =1.6×10−7Ω−1cm−1 at 25°C, with an activation enthalpy for σ‖c of 0.38 eV. The conduction perpendicular toc-direction has been found to be predominantly electronic with a value of σ⊥c =3×10−9Ω−1cm−1 at 25°C and an activation enthalpy for σ⊥c of 0.64 eV. This is the first observation of one-dimensional Ag+ conduction and this type of orientation-dependent change from ionic to electronic conduction.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00886951
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  • 78
    Digitale Medien
    Digitale Medien
    Effect of temperature on the validity of the einstein relation in heavily doped semiconductors (1980)
    Springer
    Applied physics 23 (1980), S. 241-244 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An analytical expression of the modified form of the Einstein relation in heavily doped semiconductors in which Gaussian band tails are formed near the lower limit of heavy doping is derived for studying the temperature dependence of the diffusivity-mobility ratio of the carriers in such semiconductors. It is found that, with increasing temperature from relatively low values, the ratio first increases in a nonlinear manner and then decreases till, at high temperatures, it approaches its value corresponding to the non-degenerate condition resulting in a peak over a narrow range of temperatures.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00914906
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  • 79
    Digitale Medien
    Digitale Medien
    Auto-correlation of velocity-fluctuations and frequency-dependent diffusion constant for hot electrons (1981)
    Springer
    Applied physics 26 (1981), S. 131-138 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72 ; 72.20 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A method has been developed for determining the auto-correlation functions of the fluctuations in the transverse and the parallel components of hot carrier-velocity in a semiconductor by Monte Carlo simulation. The functions for electrons in InSb are determined by this method for applied electric fields of 50 V/cm, 75 V/cm, and 100 V/cm. With increasing value of the time interval the transverse auto-correlation function falls nearly exponentially to zero, but the parallel function falls sharply to a negative peak, then rises to positive values and finally becomes zero. The interval beyond which the auto-correlation function is zero and the correlation time are also evaluated. The correlation time is found to be approximately 1.6 times the relaxation time calculated from the chord mobility. The effect of the flight sampling time on the value of variance of the displacement, is investigated in terms of the low frequency diffusion constants, determined from the variation of the correlation functions. It is found that the diffusion constants become independent of the sampling time if it is of the order of one hundred times the relaxation time. The frequency-dependent diffusion constants are calculated from the correlation functions. The transverse diffusion constant falls monotonically with frequency for all the field strengths studied. The parallel diffusion constant has similar variation for the lower fields (50 V/cm and 75 V/cm) but it has a peak at about 44 GHz for the field of 100 V/cm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616660
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  • 80
    Digitale Medien
    Digitale Medien
    Thermal annealing and light irradiation effects on hole and electron drift mobilities of Se93.5As6.5 and Se94.3Ge5.7 films (1981)
    Springer
    Applied physics 26 (1981), S. 179-184 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Thermal annealing and light irradiation effects on hole and electron drift mobilities were studied for amorphous Se93.5As6.5 and Se94.3Ge5.7 films by means of a time-of-flight technique. The electron drift mobility and its activation energy show a drastic increase after the heat and light treatments, while the hole drift mobility remains almost unchanged. The change of electron transport is attributed to a relaxation of local structural distortion, which is correlated with relatively shallow localized states. The present experimental results are inconsistent with the prior proposal that electron transport in amorphous selenides is correlated with Se8 ring molecules.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00614754
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  • 81
    Digitale Medien
    Digitale Medien
    Harmonic mixing in a cosine potential for arbitrary damping (1984)
    Springer
    Applied physics 33 (1984), S. 1-7 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 42.65
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Harmonic mixing of two alternating electric fields due to a Brownian charged particle in a nonlinear one-dimensional potential of cosine shape is investigated. The dynamics of the system are described by a time dependent Fokker-Planck equation. The appropriate distribution function is obtained by a matrix continued fraction expansion method, which is treated numerically. The dc signal due to mixing is computed for strong thermal fluctuations in all relevant parameter ranges of the pinning potential strength, damping and frequency. The dc signal without fluctuations is discussed separately. Resonance effects are shown in the electric dc field and the additional phase shift, caused by intrinsic relaxation processes.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01197078
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  • 82
    Digitale Medien
    Digitale Medien
    Hopping and band transport in amorphized semiconductors (1984)
    Springer
    Applied physics 33 (1984), S. 29-35 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Crystalline samples of Si, GaAs, GaP, InP, and CdTe have been rendered amorphous by bombardment with rare gas ions. DC conductivity and thermopower have been measured as a function of temperature in the interval between 15–500 K. In all cases, electron transport at low temperatures is characterized by non-simply activated processes of the hopping type transport, whereas band transport is observed at higher temperatures. The common and individual features of the different amorphous systems are discussed within the framework of existing transport theories.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01197082
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  • 83
    Digitale Medien
    Digitale Medien
    Temperature dependence of AC-photoconductivity of HgI2 crystal (1987)
    Springer
    Applied physics 42 (1987), S. 129-131 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.80J ; 70.90
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract An ac impedance method has been used to study the electrical properties of an illuminated HgI2 crystal as a function of temperature [10–350 K] and frequency [1–104 Hz]. The complex impedance plane plots enabled us to determine the bulk resistance of the crystal as a function of temperature. Activation energies of [0.08±0.005 eV] and [0.25 ±0.01eV] are then found; they are attributed to acceptor and donor trapping levels, respectively. At temperatures lower than 230 K, a weak temperature dependence of the bulk resistance is observed. This weak dependence is supposed to be due to photoconductivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616722
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  • 84
    Digitale Medien
    Digitale Medien
    Conductivity fluctuations in planar resistors (1987)
    Springer
    Applied physics 43 (1987), S. 93-95 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60 ; 41
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Non-uniform planar resistors are modelled by a small stochastic conductivity pattern superimposed on the constant mean conductivity. At first a theoretical analysis is presented giving the mean square deviation of the resistor current for a given applied voltage. The same problem is then simulated by Monte-Carlo experiments and a good agreement is observed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617959
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  • 85
    Digitale Medien
    Digitale Medien
    Toward molecular electronics (1987)
    Springer
    Applied physics 43 (1987), S. 139-141 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 85.40 ; 72.20 ; 76
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A polarized N-O bond behaves as an intramolecular p-n junction. Their rectifying properties have been found in 1,3-dimethylisoxasole, 1-phenylsydnone, and 1-(4-methylphenyl)sydnone molecules based on H1-NMR data.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00617966
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  • 86
    Digitale Medien
    Digitale Medien
    Phase formation and redistribution of Xe implanted in the Ni-Si system after fast melting and solidification (1987)
    Springer
    Applied physics 44 (1987), S. 279-284 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 81.40 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The behaviour of Xe implanted at the Ni-Si interface and irradiated with Nd-laser pulses is studied in details and compared with Xe implantation into NiSi2 and into pure Si. Ion beam mixing followed by laser irradiation is able to form good quality epitaxial NiSi2 layer on Si. An inward segregation of Xe is observed with retention of Xe at a depth of 30 nm inside pure silicon. Implantation of Xe into NiSi2 or pure Si causes broadening and loss of Xe, as generally observed for implantation into pure materials. The different behaviour of Xe at the Si/NiSi2 interface must thus be ascribed to peculiar characteristics of the interface itself.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616703
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  • 87
    Digitale Medien
    Digitale Medien
    Noise current spectrum in submicrometer samples (1986)
    Springer
    Applied physics 41 (1986), S. 197-199 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.70
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The noise current spectral density in submicrometer samples is computed using the Monte Carlo method. The normalized spectral density is found to decrease with sample length and increase with the field. The high-field noise is like shot noise and increases with current in agreement with experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00616840
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  • 88
    Digitale Medien
    Digitale Medien
    Instability of photoexcited electron-hole plasma in short semiconductor structures (1987)
    Springer
    Applied physics 42 (1987), S. 41-43 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The instability of the electron-hole plasma produced by continuous photoexcitation in short semiconductor structures is investigated theoretically. The applied electric field is considerably disturbed by photogenerated charge carriers. At a sufficiently intensive photogeneration plasma instability occurs. The frequency of current oscillations due to the instability, as shown by numerical simulation for a GaAs structure, is in the range of 1011–1012s−1.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00618157
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  • 89
    Digitale Medien
    Digitale Medien
    The electrical properties of doped silicon, grown by Molecular-Beam-Epitaxy (MBE) (1987)
    Springer
    Applied physics 42 (1987), S. 197-200 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 73.60
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Measurements of the Hall coefficients and of the resistivity of MBE-grown Si, doped with P, As, Sb, B, and Ga in the concentration range 1014 to 1020 cm−3, were carried out at 77 K and at 300 K. With the exception of Ga-doped Si, the measured mobilities were close to or higher than those of bulk materials at both temperatures. The Mott metal/non-metal transition has been observed in the present epitaxial materials and the measured values for the critical impurity concentration at which the transition occurs, agree with values reported by other workers for bulk silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00620599
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  • 90
    Digitale Medien
    Digitale Medien
    Mechanism for NonlinearI – V Behaviour and the Temperature Dependence of Threshold Switching in the Se-Te-Sn System (1988)
    Springer
    Applied physics 46 (1988), S. 299-303 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The nonlinearI – V behaviour and threshold switching of the bulk Se-Te-Sn system have been experimentally studied at various temperatures. It is observed that the curves are linear for low voltages and become superlinear at higher voltages. After a certain voltageV th, the current through the material shoots to a very high value and the potential across the material drops to a low value. It is also found that there is a decrease in Vh with increase in percentage of tin and temperature. An attempt is made to explain the nonlinearI – V behaviour and threshold switching on the basis of a microcrystallite model. A study of Se-Te-Sn system reveals that our results are in concurrence with the theoretical predictions.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01210350
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  • 91
    Digitale Medien
    Digitale Medien
    Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses (1989)
    Springer
    Applied physics 48 (1989), S. 245-249 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Semiconductor response to ultrafast electric pulses was investigated both theoretically and experimentally. The possibilities for hot-electron drift velocity estimation from a pulsed electric conductivity measurement were analysed. An optoelectronic arrangement with time resolution of 20 ps was used to perform such measurements on then-InSb andn-InAs single crystals. Negative differential mobility (n.d.m.) was observed in both semiconductors at high electric fields.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00619393
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  • 92
    Digitale Medien
    Digitale Medien
    A model for the occurrence of transient negative photoconductivity in silicon doped with gold (1991)
    Springer
    Applied physics 53 (1991), S. 194-197 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.40 ; 72.20 ; 85.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract A transient negative photoconductivity phenomenon observed in silicon doped with gold atoms has been investigated. On the basis of the trapping of photo-excited carriers into two deep levels of gold atoms, a model for the occurrence of transient negative photoconductivity is proposed and related qualitatively to some experimental results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00324250
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  • 93
    Digitale Medien
    Digitale Medien
    Semi-metallic behaviour of i-AlCuFe quasicrystals (1993)
    Springer
    Applied physics 57 (1993), S. 431-435 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.15 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report on new measurements of the electrical conductivity, Hall effect and thermoelectric power in the temperature range from 2 K to 440 K for AlCuFe quasicrystals of different compositions and annealing treatments. Particularly, the Hall coefficient and the thermopower show a strong dependence on composition and also on heat treatment. The increase of sample perfection on annealing between 810° C and 825° C is demonstrated by analysing X-ray measurements. All measured quantities can be explained in terms of a semimetal containing both electrons and holes at low temperatures, at least for samples near the ideal quasicrystalline structure and composition.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00331782
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  • 94
    Digitale Medien
    Digitale Medien
    Beam-coupling in tetragonal potassium Tantalate-Niobate crystals (1994)
    Springer
    Applied physics 58 (1994), S. 343-347 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 42.40 ; 78.20 ; 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Beam-coupling is investigated in a nominally pure tetragonal potassium Tantalate-Niobate (KTN) crystal as a function of external electric field, spatial frequency and light wavelength. The variation of these parameters leads to a change of the direction of energy transfer between the two recording beams. The experimental results can be consistently described by a one-center charge-transport model taking into account electron and hole contributions to photoconductivity and space-charge limitations due to the available trap density.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00323607
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  • 95
    Digitale Medien
    Digitale Medien
    Electrical properties of p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV grown by liquid phase epitaxy (1994)
    Springer
    Applied physics 59 (1994), S. 199-201 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 85.30 ; 81.10
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract p +/n + InGaAsP tunnel diodes with a bandgap of 0.95 eV were fabricated by liquid phase epitaxy and their electrical properties were characterized. Forward conductances of 500 Φ−1 cm−2, peak current densities of 28.5 A/cm2 and peak to valley current ratios of 14.3 were obtained at room temperature. These devices were incorporated successfully as Intercell Ohmic Connections (IOCs) for an InP-based, two-terminal monolithic multijunction tandem solar cell.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00332217
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  • 96
    Digitale Medien
    Digitale Medien
    Energy criterion in the interpretation of dielectric relaxation (1993)
    Springer
    Applied physics 56 (1993), S. 405-408 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 66 ; 72.20 ; 77
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The “universal” fractional-power-law frequency dependence of relaxation seen in most solid dielectrics has the unique property that the ratio of macroscopic energy lost per radian to energy stored is independent of frequency. In a recent publication we have shown that this “energy criterion” is satisfied if the energy loss δ in every microscopic dipolar reversal is independent of the rate of reversals. The present paper derives for the first time a quantitative relationship between the macroscopic energy loss per radian and the microscopic loss δ, thus providing a justification of the energy criterion approach. The relationship between this new frequency-domain interpretation of relaxation processes and the currently accepted theories of universal behaviour is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00332571
    Standort Signatur Erwartet Verfügbarkeit
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  • 97
    Digitale Medien
    Digitale Medien
    LiNbO3 with the damage-resistant impurity indium (1995)
    Springer
    Applied physics 60 (1995), S. 217-225 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.40 ; 78.30
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract We report on a detailed investigation (EPR, SHG, optical absorption, luminescence and Raman scattering) on the new damage-resistant impurity indium in LiNbO3, where the increased photoconductivity strongly reduces the photorefractive effect. EPR and optical absorption measurements point to a complete disappearance of the Nb antisite in LiNbO3: In for all In concentrations. We believe that the very effective driving out of Nb antisites by In is due to the trivalent charge state of In and the possibility of charge self-compensation. Similarities in the properties of Mg-, Zn- or Indoped samples are discussed. Simultaneous doping with In and Zn leads to an addition of both contributions, in particular for optical frequency doubling and luminescence. Raman studies prove that In does not improve the stoichiometry of the crystals. Indium doping provides the possibility to control simultaneously phase-matching conditions and to reduce drastically photorefraction. Therefore, In co-doped LiNbO3 compositions are promising materials for applications after solving contemporary growth problems.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538249
    Standort Signatur Erwartet Verfügbarkeit
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  • 98
    Digitale Medien
    Digitale Medien
    On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation (1995)
    Springer
    Applied physics 61 (1995), S. 107-109 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p+nn+ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5×1011 and 1.0×1012 n/cm2. It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01538373
    Standort Signatur Erwartet Verfügbarkeit
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  • 99
    Digitale Medien
    Digitale Medien
    On the recombination behaviour of iron in moderately boron-doped p-type silicon (1996)
    Springer
    Applied physics 62 (1996), S. 345-353 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 61.70 ; 72.20 ; 72.40
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The recombination lifetime and diffusion length of intentionally iron-contaminated samples were measured by the Surface Photo Voltage (SPV) and the Elymat technique. The lifetime results from these techniques for intentionally iron-contaminated samples were analysed, in particular for the aspect of the injection-level dependency of recombination lifetime. Based on theoretical considerations, a method for the analysis of deep-level parameters combining constant photon flux SPV and Elymat measurements has been developed. This method is based on a detailed numerical analysis of the Elymat technique, including the Dember electric field, the characteristics of the laser beam, the transport parameters of the semiconductor and multilevel Shockley-Read-Hall (SRH) recombination kinetics. The results of the numerical simulation are applied to the analysis of recombination lifetime measurements on intentionally iron-contaminated samples. We compared numerical simulations and experimental results from SPV and Elymat for p-type samples using the classical acceptor level atE v +0.1 eV and the donor level of FeB pairs atE c -0.3 eV as recombination centre. Better consistency in the interpretation of the results has been found in the doping range 1014–1016 cm−3 supposing theE c -0.3 eV level as predominant recombination centre. An attempt to extract the electron and hole capture cross-sections for this defect is made.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01594232
    Standort Signatur Erwartet Verfügbarkeit
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  • 100
    Digitale Medien
    Digitale Medien
    A thermal model for the ablation of polymers by lasers and high intensity ion pulses (1996)
    Springer
    Applied physics 63 (1996), S. 13-17 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 72.60 ; 81.60.Jw
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The results for the ablation of polymers by High-Intensity Pulsed Ion Beams (HIPIB) as well as by laser pulses of different wavelengths and pulse widths are discussed. A thermal model is proposed that reproduces all available experimental data. An Arrhenius type relation is assumed for the ablation velocityw(T) =w 0 exp (−T 1/T). Once the two parametersw 0 andT 1 are known for a certain polymer the model allows one to predict the ablation rate as a function of laser wavelength, fluence, and pulse width and for HIPIB pulses.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01579741
    Standort Signatur Erwartet Verfügbarkeit
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