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  • 1
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 750 (1995), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1838-1840 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 9399-9401 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three kinds of textures, i.e., (200), (111), and (220) of TiN films prepared by filtered arc deposition have been continuously observed with varying film thickness and bombarding energy of the deposited particles. The evolution of the texture from (200) to (111), then to (220) is discussed on the basis of the so-called overall energy which consists of the surface energy, the strain energy, and the stopping energy of the films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3918-3921 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron field emission from diamond-like carbon (DLC) films deposited on Si, Ti/Si, and Au/Si substrates by a filtered arc deposition technique was studied. As compared to DLC/Si and DLC/Au/Si, electron field emission from DLC/Ti/Si was enhanced, showing an increased emission current density and emission site density (∼1.2×103/cm2). An emission site density up to 2.2∼2.2×103/cm2 was obtained after the DLC/Ti/Si had been annealed at 430 °C for 0.5 h. A patterned DLC/Ti/Si array fabricated by the oxygen reactive ion beam etching technique showed further field emission enhancement. An emission site density up to 3.2∼3.5×103/cm2 and a threshold field as low as 2.1 V/μm were achieved. It was shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion beam etching were possible causes of the enhancing effects. It could also be explained by Geis' metal-diamond-vacuum triple junction emission mechanism. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 370-372 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ge epilayers of different thicknesses are grown by molecular-beam epitaxy with Sb as a surfactant on Si(100) substrates. X-ray diffraction illustrates that these Ge thin films are partially strained, and the strains decrease gradually with increasing epilayer thickness. Raman spectra reveal a downward shift of the Ge–Ge mode peak as the epilayer thickness increases. In the regions of high strain, the relationship between the Raman shift of this mode and the strain in the partially relaxed samples is considerably different from the linear relationship reported before, which is mainly attributed to the spatial confinement effect of phonons in a nanocrystal. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1403-1405 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films implanted with Si and N is reported. A flat Si profile was first created. N ions were subsequently implanted into the same depth region as the implanted Si ions. Two PL bands peaking at ∼330 and ∼430 nm were observed from the samples at room temperature with and without annealing. It is found that the PL has a strong dependence on the stabilized N in the Si- and N-coimplanted SiO2 films. The PL may originate from a complex of Si, N, and O. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1281-1285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, a method for the determination of the sp3/sp2 ratio for highly tetrahedral amorphous carbon (ta-C) films is presented. This method is an optical characterization according to the Bruggeman effective medium approximation based on simulation of the infrared reflection spectrum. The simulation reflectivity is in good agreement with the experimental spectrum, and the obtained results of sp3 content are in good agreement with electron energy loss spectroscopy data, suggesting that this is an effective method for obtaining the sp3/sp2 ratio of ta-C films. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2658-2664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of surface morphologies of films prepared by ion-based deposition techniques has been investigated by atomic force microscopy. Two deposition processes, filtered arc deposition (FAD) and ion-beam-assisted deposition, where low-energy (〈100 eV) ion irradiation and high-energy (several tens of keV) ion-beam bombardment concurrent with film growth were involved, respectively, have been employed to prepare TiN and Al films. Comparative studies on the effect of energetic ions on the development of topography have been performed between the low-ion-energy regime and high-ion-energy regime. In addition, the relationship between topography and mechanical properties of thin films has been revealed, by involving thin films prepared by thermal evaporation deposition (TED), where almost all depositing particles are neutral. In the images of the TED TiN and Al films, a large number of porous and deep boundaries between columnar grains was observed, suggesting a very rough and loose surface. In contrast, the FAD films exhibited much denser surface morphologies, although still columnar. The root-mean-square roughness of the FAD films was less than 1 A(ring). Hardness test and optical parameter measurement indicated that the FAD films were much harder and, in the case of optical films, much more transparent than the TED films, which was considered to arise from the denser surface morphologies rather than crystallization of the films. The high density and super smoothness of the FAD films, and the resultant mechanical and optical properties superior to those of the TED films, were attributed to the enhancement of surface migration of the deposited adatoms in the FAD process, which could provide intensive low-energy ion irradiation during film growth. As for topography modification by high-energy ion-beam bombardment concurrent with film growth, in addition to the increase of surface diffusion due to elastic collision and thermal spikes, physical sputtering must be considered while explaining the development of the film topography. Both surface migration enhancement and sputtering played important roles in the case of high-energy heavy-ion-beam bombardment, under which condition surface morphology characterized by dense columns with larger dimension and deep clean boundaries was formed. However, under high-energy light-ion-beam bombardment, the sputtering was dominant, and the variation of sputtering coefficient with position on the surface of growing film led to the formation of cones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2043-2045 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the Raman spectra of ZnSe films grown by molecular beam epitaxy on GaAs(100) substrates passivated by NH4)2)Sx and S2Cl2 solutions is presented. Based on the analysis of the line shape of the first-order longitudinal-optical phonon of ZnSe with spatial correlation model of Raman scattering, it is shown that the ZnSe films grown on the GaAs substrates passivated by S2Cl2 solutions have longer coherence lengths, which indicate that their crystalline qualities are better than those passivated by NH4)2Sx solutions. In addition, the barrier heights of ZnSe/GaAs interfaces for different S passivations have been obtained from the ratios of the intensity of the coupled longitudinal-optical phonon-plasmon mode to that of the longitudinal-optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S2Cl2 solutions have lower density of interfacial states. © 1995 American Institute of Physics.
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