Springer Online Journal Archives 1860-2000
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Abstract n-type a-Si:H films have been irradiated with light, electrons, protons and heavy ion beams. It is shown that the non-thermal creation of dangling-bond defects activates significant densities of previously inactive phosphorus dopants. The relevance of these results is discussed with respect to equilibration phenomena in doped material and with respect to degradation phenomena in a-Si:H solar cells.
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