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  • 1
    Electronic Resource
    Electronic Resource
    Pentamethylcyclopentadienyl transition-metal complexes. 7. Electrochemistry of transition-metal .pi.-complexes. 7. Cyclopentadienyl (arene)cobalt cations: preparation, electrochemical reduction, and spectroscopic investigation of the paramagnetic d7 monocations (1984)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 106 (1984), S. 4152-4160 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00327a014
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of grain boundaries in silicon solar cells (1986)
    Springer
    Electrical engineering 69 (1986), S. 445-451 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Eine Bikristall-Teststruktur, die aus SILSO-Solarzellenmaterial herauspräpariert worden ist, wurde unter elektrischer Anregung untersucht. Messungen des Gleichstrom-Leitwertes am Spannungs-Nullpunkt bei niedriger Temperatur (200 K) zeigen, daß die Höhe der Potentialbarriere der Korngrenze mit wachsender elektrischer Anregung unter ihren Gleichgewichtswert absinkt. Genaue numerische Bestimmung der Barrierenhöhe führt jedoch auf Probleme, die mit der Planargeometrie der Teststruktur zusammenhängen. Im Hinblick auf ihre leichte Verwendbarkeit bei den folgenden Auswertungen werden untere und obere Grenzen für die räumliche Tiefe der elektrischen Anregung innerhalb der Teststruktur angenommen. Diese Grenzen definieren einen Bereich, für den man gesicherte Werte der Höhe der Potentialbarriereψ gb bestimmen kann. Der Gleichgewichtswert der Barrierenhöheψ gb beträgt 0,24 V, der sich auf 0,1V und weniger im Falle von Ladungsträger-Injektion über die Korngrenze hinweg erniedrigt.
    Notes: Contents A bicrystal test structure prepared from SILSO solar cell material was investigated under electrical excitation. Measurements of the DC zero bias conductance at a low temperature (200 K) gives evidence that the barrier height of the grain boundary decreases from an equilibrium value with growing excitation. Correct numerical determination of the barrier height, however, involves problems arising from the planar geometry of the test structure. In view of a simple applicability minimum and maximum values for the depth of excitation within the test structure are assumed. That defined a range within which reliable data of barrier heightψ gb at the grain boundary have been determined. The equilibrium value of barrier heightψ gb results in a value of 0.24 V, which is lowered to 0.1 V and less by carrier injection across the grain boundary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01573890
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of grain boudaries in silicon solar cells (1987)
    Springer
    Electrical engineering 70 (1987), S. 1-10 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Ausgangspunkt für die Bestimmung der Zustandsdichte und der Energieverteilung von Korngrenzen-Zuständen sind die Ergebnisse für die Höhe der Potentialbarriere an den Korngrenzen von Solarzellenmaterial. Die Barrierenhöhe ist dabei aus Messungen des Gleichstrom-Leitwertes am Spannungs-Nullpunkt von Bikristall-Teststrukturen gewonnen worden. Bei dieser Bestimmung der Energieverteilung der Zustandsdichte von Korngrenzen-Zuständen handelt es sich um eine spektroskopische Methode, die den Gesamtverlauf in diskontinuierlichen Stufen beschreibt. Dabei ergibt sich, daß die Zustandsdichte in der Mitte der Verbotenen Zone unter die Nachweisgrenze sinkt und in Richtung der Leitungsbandkante bis auf Werte von 1012 cm−2 eV−1 ansteigt. Die hier erhaltene Energieverteilung von Korngrenzen-Zuständen wurde durch Modellrechnungen für vorgegebene Zustandsverteilungen bestätigt. Für das Verhältnis der Einfangquerschnitte findet man 1≦C p C n ≦10. Anhand zusätzlicher Modellrechnungen kann gezeigt werden, daß die Ergebnisse dieser Untersuchungsmethode numerisch abgesichert und eindeutig sind.
    Notes: Contents Proceeding from the results for the barrier height of a grain boundary in solar cell material evaluated from the measurement of the zero bias conductance at a bicrystal test structure the density of grain boundary states and their distribution in energy have been determined. The method is a spectroscopic one and yields a steplike energy distribution. In accordance with theoretical calculations simulating typical energy distributions of the states we find, that the density of states in the middle of the gap is negligible and increases towards the conduction band edge to values of about 1012 cm−2 V−1. The capture cross section ratio is found to range from 1≦C p C n ≦10. The method is proved to yield definite and unambiguous results by means of additional model calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01572102
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum mechanical treatment of the escape probability from traps in thermally stimulated processes (1985)
    Springer
    Applied physics 37 (1985), S. 165-170 
    Details
    ISSN: 1432-0630
    Keywords: 71 ; 72.20 ; 78
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In thermally stimulated processes the calculation of the transition probability of a trapped charge carrier into an excited state is based on an atomistic model involving multiphonon processes. The displacement of lattice particles from equilibrium positions gives rise to electron-lattice interaction. As a result the temperature dependence is found to be of non-Arrhenius type except in some limiting cases. The difference of the probabilities for non-radiative transitions, as calculated by the quantum mechanical and by semi-classical methods, is discussed. Thermoluminescence proves to be an example for a non-radiative transition controlled phenomenon and the calculated glow curve differs appreciably from one model to the other. As a result the glow curves calculated in the quantum mechanical concept exhibit shapes which are broadened and shifted to lower temperatures, as compared to that calculated in the semi-classical concept. In turn, the activation energy, as determined by the initial rise method or the method of heating rate variation, is found to be much smaller in the quantum mechanical case.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00617501
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  • 5
    Electronic Resource
    Electronic Resource
    The effects of frusemide and probenecid on the pharmacokinetics of phenprocoumon (1990)
    Springer
    European journal of clinical pharmacology 39 (1990), S. 261-265 
    Details
    ISSN: 1432-1041
    Keywords: Frusemide ; probenecid ; phenprocoumon ; anticoagulant ; drug interaction ; pharmacokinetics
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary We have studied the pharmacokinetics of phenprocoumon with and without co-administration of frusemide and probenecid in two groups of 17 healthy volunteers. Frusemide 40 mg b.i.d. for 7 days did not interact with phenprocoumon to a significant extent. Probenecid 500 mg q.i.d. for 7 days significantly accelerated the overall elimination of phenprocoumon, as indicated by a decrease in AUC from 295 to 157 μg · h · ml−1, and a reduction in the fraction of the dose excreted by the kidneys. The data are consistent with inhibition of the glucronidation of phenprocoumon by probenecid. Its accelerated elimination may be a consequence of the increased formation of hydroxylated metabolites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00315107
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  • 6
    Electronic Resource
    Electronic Resource
    Path integration over the n-dimensional Euclidean group (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 1195-1197 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The path integral for the n-dimensional free particle is considered. According to the underlying symmetry, the short time propagator is expanded in zonal spherical functions of the Euclidean group G=T n (large-closed-square) SO(n) with respect to the subgroup H=SO(n). The group theoretical approach to path integration, including the radial part, is explicitly demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528599
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  • 7
    Electronic Resource
    Electronic Resource
    Functional Relevance of an Enhanced Expression of the Na+-Ca2+ Exchanger in the Failing Human Heart (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 779 (1996), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1996.tb44832.x
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  • 8
    Electronic Resource
    Electronic Resource
    A comparison of the Hall-effect and secondary ion mass spectroscopy on the shallow oxygen donor in unintentionally doped GaN films (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1811-1817 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on temperature-dependent Hall-effect measurements and secondary ion mass spectroscopy on unintentionally doped, n-type conducting GaN epitaxial films. Over a wide range of free carrier concentrations we find a good correlation between the Hall measurements and the atomic oxygen concentration. We observe an increase of the oxygen concentration close to the interface between the film and the sapphire substrate, which is typical for the growth technique used (synthesis from galliumtrichloride and ammonia). It produces a degenerate n-type layer of (approximate)1.5 μm thickness and results in a temperature-independent mobility and Hall concentration at low temperatures (〈50 K). The gradient in free carrier concentration can also be seen in spatially resolved Raman and cathodoluminescence experiments. Based on the temperature dependence of the Hall-effect, Fourier transform infrared absorption experiments, and photoluminescence we come to the conclusion that oxygen produces a shallow donor level with a binding energy comparable to the shallow Si donor. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305549
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  • 9
    Electronic Resource
    Electronic Resource
    Transient behavior of a-Si(C):H bulk barrier color detectors (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 3906-3910 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photocurrent transient of a-Si(C):H n-i-p-i-n/p-i-n-i-p color detectors under pulse illumination at different wavelengths has been investigated. In contrast to amorphous silicon Schottky diodes and p-i-n/n-i-p structures, the photocurrent decay after the end of the steady state illumination is barely influenced by the applied bias voltage. Moreover, a reversal of the photocurrent direction can be observed under certain bias when the light is being switched on. It is suggested that these properties of n-i-p-i-n/p-i-n-i-p structures are mainly attributed to the accumulation and trapping of the photogenerated carriers near the central barrier. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367146
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  • 10
    Electronic Resource
    Electronic Resource
    Zur Thermolumineszenz und thermisch stimulierten elektrischen Leitfähigkeit von LiF (1969)
    Springer
    The European physical journal 225 (1969), S. 44-59 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Pure and doped LiF-crystals have been investigated with respect to thermoluminescence and thermally stimulated conductivity after excitation with X-rays. The peak near 107
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01392554
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