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  • 1
    Electronic Resource
    Electronic Resource
    Characterization of grain boundaries in silicon solar cells (1986)
    Springer
    Electrical engineering 69 (1986), S. 445-451 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Eine Bikristall-Teststruktur, die aus SILSO-Solarzellenmaterial herauspräpariert worden ist, wurde unter elektrischer Anregung untersucht. Messungen des Gleichstrom-Leitwertes am Spannungs-Nullpunkt bei niedriger Temperatur (200 K) zeigen, daß die Höhe der Potentialbarriere der Korngrenze mit wachsender elektrischer Anregung unter ihren Gleichgewichtswert absinkt. Genaue numerische Bestimmung der Barrierenhöhe führt jedoch auf Probleme, die mit der Planargeometrie der Teststruktur zusammenhängen. Im Hinblick auf ihre leichte Verwendbarkeit bei den folgenden Auswertungen werden untere und obere Grenzen für die räumliche Tiefe der elektrischen Anregung innerhalb der Teststruktur angenommen. Diese Grenzen definieren einen Bereich, für den man gesicherte Werte der Höhe der Potentialbarriereψ gb bestimmen kann. Der Gleichgewichtswert der Barrierenhöheψ gb beträgt 0,24 V, der sich auf 0,1V und weniger im Falle von Ladungsträger-Injektion über die Korngrenze hinweg erniedrigt.
    Notes: Contents A bicrystal test structure prepared from SILSO solar cell material was investigated under electrical excitation. Measurements of the DC zero bias conductance at a low temperature (200 K) gives evidence that the barrier height of the grain boundary decreases from an equilibrium value with growing excitation. Correct numerical determination of the barrier height, however, involves problems arising from the planar geometry of the test structure. In view of a simple applicability minimum and maximum values for the depth of excitation within the test structure are assumed. That defined a range within which reliable data of barrier heightψ gb at the grain boundary have been determined. The equilibrium value of barrier heightψ gb results in a value of 0.24 V, which is lowered to 0.1 V and less by carrier injection across the grain boundary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01573890
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of grain boudaries in silicon solar cells (1987)
    Springer
    Electrical engineering 70 (1987), S. 1-10 
    Details
    ISSN: 1432-0487
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Description / Table of Contents: Übersicht Ausgangspunkt für die Bestimmung der Zustandsdichte und der Energieverteilung von Korngrenzen-Zuständen sind die Ergebnisse für die Höhe der Potentialbarriere an den Korngrenzen von Solarzellenmaterial. Die Barrierenhöhe ist dabei aus Messungen des Gleichstrom-Leitwertes am Spannungs-Nullpunkt von Bikristall-Teststrukturen gewonnen worden. Bei dieser Bestimmung der Energieverteilung der Zustandsdichte von Korngrenzen-Zuständen handelt es sich um eine spektroskopische Methode, die den Gesamtverlauf in diskontinuierlichen Stufen beschreibt. Dabei ergibt sich, daß die Zustandsdichte in der Mitte der Verbotenen Zone unter die Nachweisgrenze sinkt und in Richtung der Leitungsbandkante bis auf Werte von 1012 cm−2 eV−1 ansteigt. Die hier erhaltene Energieverteilung von Korngrenzen-Zuständen wurde durch Modellrechnungen für vorgegebene Zustandsverteilungen bestätigt. Für das Verhältnis der Einfangquerschnitte findet man 1≦C p C n ≦10. Anhand zusätzlicher Modellrechnungen kann gezeigt werden, daß die Ergebnisse dieser Untersuchungsmethode numerisch abgesichert und eindeutig sind.
    Notes: Contents Proceeding from the results for the barrier height of a grain boundary in solar cell material evaluated from the measurement of the zero bias conductance at a bicrystal test structure the density of grain boundary states and their distribution in energy have been determined. The method is a spectroscopic one and yields a steplike energy distribution. In accordance with theoretical calculations simulating typical energy distributions of the states we find, that the density of states in the middle of the gap is negligible and increases towards the conduction band edge to values of about 1012 cm−2 V−1. The capture cross section ratio is found to range from 1≦C p C n ≦10. The method is proved to yield definite and unambiguous results by means of additional model calculations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01572102
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  • 3
    Electronic Resource
    Electronic Resource
    New and simple optical method for in situ etch rate determination and endpoint detection (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1474-1476 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission spectroscopy has been established as a simple method for simultaneous etch rate determination and endpoint detection in ion beam etching. During the sputtering of a thin layer with a refractive index different from the substrate interference is detected in the reflected light emitted by excited beam particles. This method will be very useful for other plasma and beam-assisted processes too, like deposition, reactive ion etching, and reactive ion beam etching. In contrast to the conventional methods, no additional light source is required.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102301
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  • 4
    Electronic Resource
    Electronic Resource
    Energy analysis of neutral atoms in broad oxygen ion beams by Doppler-shift measurements (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5428-5434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical emission spectroscopy has been established as a valuable method for the analysis of broad oxygen ion beams. The ion beams used for reactive ion-beam etching have been investigated in the energy range of 300–1500 eV. From survey spectra O+2 molecules and neutral O atoms are identified as main emitting species. Concerning the occurrence of emission lines the beam spectrum resembles that obtained from an O2 rf plasma. The intensity ratios however are strongly different within both spectra. Whereas electron impact is the main source for electronic excitation in ordinary etch plasmas, heavy particle collisions are suggested to play an important role in the investigated ion beams. Beam-induced emissions of atomic oxygen neutrals were recorded at high resolution of 0.1 A(ring). The O emission lines were found to be triple peaked. One peak at the unshifted wavelength and two Doppler-shifted peaks could be resolved. The absolute values of the wavelength shifts are well correlated to the energies of the initial ions extracted from the ion source by a grid optics. Besides slow atoms, atoms moving with the full beam energy as defined by the ion extraction conditions and with only half the beam energy are detected. The observed Doppler structure is attributed to charge exchange and dissociative collisions taking place in the gas phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346998
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of large-area beam attacks on surfaces and testing of etching reactions (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 48-55 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An apparatus has been constructed to analyze the particle flux of positive ions on surfaces from dry etching reactors. The particle flux can emerge from a great variety of reactive ion etching systems or from reactive ion beam etching sources. The particle beam passes through a small orifice with a diameter of 100 μm. A differentially pumped quadrupole mass spectrometer with a specially designed ion transfer optics performs the energy analysis of positive ions. The energy range can be varied between 0 and 500 eV with a resolution of 1%. The angular distribution measurements of the particle flux are carried out varying the inclination of the mass analyzer by ±20° with the vertex lying centrally in the sampling orifice. The angular resolution is about 1°. Rotation of the source on top of the apparatus and translation over ±10 cm in xy direction and 15 cm in z direction perpendicular to it is provided in order to assure fully local resolution. The electrical properties of the orifice-ion optics system is discussed with respect to their influence on ion trajectories. The purpose of the apparatus is to provide data on particle fluxes relevant for microelectronic processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142741
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  • 6
    Electronic Resource
    Electronic Resource
    Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited) (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2367-2367 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Aspects of ion beam sources are treated which emerge from their use for reactive ion beam etching (RIBE) in silicon VLSI technology. As a basis for this treatment, the requirements for dry etching for VLSI are elaborated, as well as the consequences of these requirements for ion beam sources to be used for such technology. Practical experience with two types of ion beam sources for this application are highlighted, a classical Kaufman source and a first-generation ECR source. Aspects relevant for microfabrication related to grid optics, and the use of reactive gases, are discussed. Most important in this context are the internal microdivergence of an ion beam and the fragmentation of molecular gases taking place in the source and the ion beam as well. The consequence for potential application of RIBE for micropatterning must be to characterize sources by measuring their energy- and angle-resolved particle fluxes to the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142931
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  • 7
    Electronic Resource
    Electronic Resource
    Ion beam diagnostics by Doppler shifted light emissions (abstract)a) : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2393-2393 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Broad low-energy ion beams in the energy range of 0.2 to 1.5 keV originating from a filament source with argon as feed gas have been analyzed by high-resolution emission spectroscopy. The Doppler structure of Ar+ emissions reveals the existence of different velocity classes. Besides slow ions and ions possessing the main beam energy, electronically excited Ar+ ions with twice the main beam energy are detected which are attributed to a single-electron capture process in Ar++/Ar collisions. As a preliminary result from a reactive beam extracted from a microwave CF4 source, plasma fast F atoms are detected which are attributed to charge exchange and dissociative collisions in the process chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142939
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  • 8
    Electronic Resource
    Electronic Resource
    Characteristics of an ECR ion beam source for low-pressure etching : Proceedings of the fourth International Conference on Ion Sources (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2403-2405 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have investigated an ECR ion beam source operated with a pair of coils and a two-grid extraction optics. The most important parameter for the source operation at low pressure (p〈10−3 mbar) is the magnetic field in the source. A basic understanding of the physics occurring in this source can be obtained by simply registrating the total ion beam current through the first grid as a function of the magnetic field from the coils. From these characteristics we find that for the wave-propagation through the plasma column the magnet next to the microwave feed (rear magnet) is the important one. The other one (front magnet) controls the electron losses if the plasma generation is mainly located in the rear magnet. For certain magnetic field distributions we find harmonics of the ECR resonance, indicating nonlinear plasma wave interactions occurring in the source.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142943
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  • 9
    Electronic Resource
    Electronic Resource
    Ion sources for dry etching: Aspects of reactive ion beam etching for Si technology (invited)a) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3050-3057 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Aspects of ion beam sources are treated which emerge from their use for reactive ion beam etching (RIBE) in silicon VLSI technology. As a basis for this treatment, the requirements for dry etching for VLSI are elaborated, as well as the consequences of these requirements for ion beam sources to be used for such technology. Practical experience with two types of ion beam sources for this application are highlighted, a classical Kaufman source and a first-generation ECR source. Aspects relevant for microfabrication related to grid optics, and the use of reactive gases, are discussed. Most important in this context are the internal microdivergence of an ion beam and the fragmentation of molecular gases taking place in the source and the ion beam as well. The consequence for potential application of RIBE for micropatterning must be to characterize sources by measuring their energy- and angle-resolved particle fluxes to the wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142605
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  • 10
    Electronic Resource
    Electronic Resource
    Ion beam diagnostics by Doppler shifted light emissionsa) (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3063-3067 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Broad ion beams in the energy range of 0.2 to 1.5 keV originating from a filament source with argon as feed gas have been analyzed by high-resolution emission spectroscopy. The Doppler structure of Ar+ emissions reveals the existence of different velocity classes. Besides slow ions and ions possessing the main beam energy, electronically excited Ar+ ions with twice the main beam energy are detected which are attributed to a single-electron capture process in Ar++/Ar collisions. As a preliminary result from a reactive beam extracted from a microwave CF4 source plasma fast F atoms are detected which are attributed to charge exchange and dissociative collisions in the process chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142607
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