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  • Articles  (38)
  • 79.20  (38)
  • 1975-1979  (38)
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (38)
  • Architecture, Civil Engineering, Surveying
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  • Articles  (38)
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  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (38)
  • Architecture, Civil Engineering, Surveying
  • Physics  (38)
  • 1
    Electronic Resource
    Electronic Resource
    Experimental set-up for irradiation of solid H2 and D2 with charged particles of keV energies (1976)
    Springer
    Applied physics 9 (1976), S. 321-329 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 68
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental facility was built where films of solid deuterium (and hydrogen) may be made with known thickness and irradiated with pulsed beams of electrons (up to 3 keV) and light ions (up to 10 keV). Films are made on a target plate held at 2.5–3 K. Film growth rate is calibrated with a quartz crystal film thickness monitor. The target plate, which can be heated so that films are removable by evaporation, may be used both as a calorimeter and as a beam current collector. Methods for measurement of secondary electron emission coefficients were developed, and preliminary measurements were made with electrons and hydrogen ions. For electron bombardment, the secondary electron emission coefficient of solid deuterium was much smaller than one. It was shown possible to use the set-up to study beam desorption of very thin films. Furthermore the set-up could be used for measuring the energy-reflection coefficient γ (i.e. the fraction of beam energy reflected from the target) for protons impinging on a heavy target material by using the target as a calorimeter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900458
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  • 2
    Electronic Resource
    Electronic Resource
    Electronic conduction mechanisms of Cs- and B-implanted SiO2-films (1977)
    Springer
    Applied physics 12 (1977), S. 137-148 
    Details
    ISSN: 1432-0630
    Keywords: 71.50 ; 72.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Thermal SiO2-films of MOS-structures have been implanted with Cs-and B-ions so that the distribution maximum was located near the center of the insulating films. The change in conduction mechanism was analysed before and after implantation and annealing at 500°C for 2h. Two major types of effects are observed: 1) Implantation generally changes the conduction mechanism from Fowler-Nordheim tunneling in pure SiO2 to the Frenkel-Poole mechanism in the implanted film for both types of ions. This effect is caused by traps due to radiation damage. 2) The second effect is dependent on the implanted type of ion. A strong increase of the current at high fields is observed after Cs-implantation while B-implantation leads to a decrease of the current at high fields. This effect is caused by field-enhanced emission and trapping of charge carriers, respectively. The local field in the implanted region is dependent on the charge state of the implanted ion. Cesium is positively and Boron is negatively charged in the oxide. After high-field stressing, a forming process occurs in the oxide which leads to high injection from the contacts. This forming process is very little dependent on the implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896139
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  • 3
    Electronic Resource
    Electronic Resource
    SIMS and flash desorption studies of nickel oxygen interaction (1978)
    Springer
    Applied physics 16 (1978), S. 367-373 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract O2 exposure of polycrystalline nickel at 300 K results in characteristics changes of secondary ion emission. These can be described by a model which is in good agreement with corresponding LEED, AES, XPS, and ΔΦ results of other authors. According to this model, oxygen can be bonded on Ni in at least five different phases: 1) chemisorption, indicated by a rapid increase of Ni+, Ni 2 + , and Ni2O+ (≦5 L); 2) a rearranged chemisorption layer, characterized by a drastic decrease of Ni+, Ni 2 + , and Ni2O+ (5–15 L); 3) nickel oxide (NiO) responsible for a strong NiO−- and NiO 2 − -emission (≦40 L); 4) oxygen on top of this NiO layer, producing a final increase of Ni+ and NiO+ and a O2-flash signal at 400 K (〉40 L); 5) bulk dissolved oxygen in thermal equilibrium with a chemisorption layer (after several exposure/heating cycles). During ion bombardment of a 100 L O2 exposed Ni surface these different binding states occur in a reversed order of succession. O2-flash signals at 400 and 1100 K, related to drastic changes in secondary ion emission at 400, 700, and 1100 K, reflect the disappearance of various oxygen binding states. The exchange between different oxygen phases was studied by16O2/18O2 isotope experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885861
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  • 4
    Electronic Resource
    Electronic Resource
    Depth resolution in sputter profiling (1977)
    Springer
    Applied physics 13 (1977), S. 205-207 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dependence of depth resolution on sputter depth due to various parameters is theoretically estimated. Comparison with experimental work of different authors shows the validity of the proposed model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882481
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  • 5
    Electronic Resource
    Electronic Resource
    3 to 15 keV Ar+ induced Auger electron emission from Si and Ar (1977)
    Springer
    Applied physics 13 (1977), S. 261-266 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ar+ induced Auger electrons from Si and Ar were investigated at bombardment energies between 3–15 keV and target currents of a few μA. The Auger electron yields were compared with secondary ion yields of Si and Ar by simultaneous SIMS-AES measurements. In the ion induced Auger spectra of Si five Auger peaks and in the Ar spectra three Auger peaks were observed. The ion induced Auger electron yield of Si and Ar were found to be strongly dependent upon the primary ion energy. “Bulk like” and “atomic like” Auger transitions of ion induced Auger electrons of Si were observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882890
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  • 6
    Electronic Resource
    Electronic Resource
    Lattice location of lead implanted into silicon at room temperature (1977)
    Springer
    Applied physics 13 (1977), S. 391-393 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882616
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  • 7
    Electronic Resource
    Electronic Resource
    The sputtering mechanism for low-energy light ions (1979)
    Springer
    Applied physics 18 (1979), S. 391-398 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer simulation program MARLOWE which follows the trajectories of energetic ions and recoiling target atoms in solids has been used to calculate sputtering yields for low energy (0.1–10keV) light ions (H, D, T,4He). Recoil energy densities were calculated for comparison with analytical theories. The sputtering yields obtained for amorphous Fe agree within a factor of two with experimentally measured values for polycrystalline stainless steel, while the calculated yields for protons on amorphous molybdenum are more than twice the experimental values on polycrystalline material. The calculations show that in the parameter range investigated, ions backscattered in the solid contribute a major part to sputtering. This result confirms earlier calculations of the threshold energy for sputtering which are in agreement with recent measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00899693
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  • 8
    Electronic Resource
    Electronic Resource
    Some investigations of moderators for slow positron beams (1979)
    Springer
    Applied physics 19 (1979), S. 247-255 
    Details
    ISSN: 1432-0630
    Keywords: 78.70 ; 82.65 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Measurements were made on a low-energy positron beam apparatus in an attempt to increase the efficiency of the slow positron yield from radioisotopes. A study was made to sweep thermalized positrons to the surface of a silicon wafer with an applied electric field at 298 and 140 K. Temperature studies were also made on more conventional Pt and Pt+MgO powder moderators and the results are discussed. The role of the MgO powder has been clarified, though fundamental questions remain. The positron apparatus beam and relevant information regarding sources, temperature and magnetic fields are discussed in sufficient detail so that such a slow positron beam utilizing a “conventional” slow positron moderator could be easily duplicated for use in solid state studies.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900467
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  • 9
    Electronic Resource
    Electronic Resource
    The investigation of ion implanted layers by scanning electron microscopy (1976)
    Springer
    Applied physics 10 (1976), S. 111-119 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract SEM signals were used to image ion-implanted surfaces and to quantitatively analyze implanted layers. Silicon was used as substrate material for implantation, but some measurements on GaAs are also reported. Various ion species were implanted and the dependence of the signals upon fluence was studied. Electron backscattering and absorbed current were found to be influenced by the radiation damage rather than by the species of implanted ions. The degree of damage could be characterized by absorbed current measurements. The ion fluence necessary to produce amorphous layers was determined for N, P, and As in Si using this technique. This fluence was found to correspond to an energy deposition of 2.8×1021 keV/cm3. For the detection of very small amounts of implanted ions by characteristic X-rays, the electron energy must be fitted to the penetration depth of the ions under conditions maintaining reasonable excitation cross sections. The lowest value of the normalized detectability obtained in our measurements was 2.5×1013 Ions/cm2 for 45 keV phosphorus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896330
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  • 10
    Electronic Resource
    Electronic Resource
    Surface analysis of insulating materials by Secondary Ion Mass Spectrometry (SIMS) (1976)
    Springer
    Applied physics 10 (1976), S. 317-324 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For a non-conducting solid sample (TiO2 powder) the conditions for compensation of the charge build-up at the surface caused by the ion impact in SIMS are experimentally investigated. The compensation is achieved by an additional auxiliary electron beam of low energy. The resolution and the intensities of the secondary ions were measured as a function of the ratio of the current densities of the electron and the ion beams. The compensation for negative secondary ions, and especially for those with higher masses, is more critical than for positive ones. The intensities are influenced by the different values of the mean emission energies and the form of the energy distributions. Examples of mass spectra by SIMS for some insulators are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00920616
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  • 11
    Electronic Resource
    Electronic Resource
    Total backscattering of keV light ions from solid targets in single-collision approximation (1976)
    Springer
    Applied physics 11 (1976), S. 265-272 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reflection of light ions from heavy random targets has been calculated within the single-collision approximation on the basis of essentially the same physical model as Schiøtt's adaptation of the LSS range theory to light ions. An accurate effectivepower approximation has been utilized to evaluate a number of physical quantities relating to reflected ions under the assumption of Thomas-Fermi scattering. Analytical results as well as universal curves are presented for reflected-energy spectra integrated over ejection angle, particle and energy reflection coefficients, and quantities derived from these. Good agreement with experimental results is obtained for ε≳, where ε is Lindhard's energy parameter. The results are compared with those from previous calculations on the basis of transport theory and computer simulation. An estimate is given of the single-collision tail of the light-ion range profile. Qualitative corrections for beam attenuation and recoil energy loss are presented in appendices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00897063
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  • 12
    Electronic Resource
    Electronic Resource
    A contribution to the investigation of ion impact desorption by ion scattering (1977)
    Springer
    Applied physics 13 (1977), S. 47-49 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Sputtering or ion impact desorption of adsorbed layers can be directly investigated by low-energy ion scattering. Because of its specific sensitivity to surface atoms, this method provides the possibility of monitoring the decrease of the signal from the adsorbate or the increase of the signal from the substrate. Both signals were studied with He+ backscattering from the system O on Ni (110). The measured desorption cross-sections and the principal implications for both ways of observation are discussed. The use of the substrate signal for the desorption study can be of major advantage, particularly in the case of light adsorbates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00890719
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  • 13
    Electronic Resource
    Electronic Resource
    Relative ion sputtering yield measurements by integration of secondary ion energy distribution using a retarding-dispersive Ion energy analyzer (1977)
    Springer
    Applied physics 14 (1977), S. 89-97 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The application of a retarding-dispersive energy analyzer as the pre-filter of a quadrupole mass analyzer has made it possible to combine a standard high-speed Secondary Ion Mass Spectrometer (SIMS) and a high-resolution secondary-ion energy analyzer into one instrument. Data taken with this instrument indicate the presence of very significant high-energy tails in the energy distribution of all observed secondary ions, even with relatively low (2 keV) primary ion energies. The shape of the energy distribution varies widely from element to element, for atomic compared to molecular species sputtered from a clean metal surface, and depends, for a given species sputtered from a metal surface, on the degree of surface oxidation. The variations established in the present work are large enough to introduce in many cases substantial discrepancies between published values of both relative ion sputtering yields and surface elemental concentrations and values obtained by considering the complete energy distribution. Methods of obtaining accurate secondary ion yields by integrating the energy distribution are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882637
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  • 14
    Electronic Resource
    Electronic Resource
    Study of non-radiative silicon deexcitation in an oxygen atmosphere using the differential measurement of the excited state lifetimes (1977)
    Springer
    Applied physics 14 (1977), S. 303-311 
    Details
    ISSN: 1432-0630
    Keywords: 82.65 ; 79.20 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Having developed a new method of differential lifetime measurement using atomic ionoluminescence as an excitation process, we applied this method to a monocrystaline silicon sample in an oxygen atmosphere of variable pressure. We found decreased values of the experimental lifetimes concerning levels 4s 3 P 0 and 4s 1 P 0, which are more marked when the oxygen pressure increases. This tends then towards a saturation of the observed phenomenon. We propose, in agreement with other authors, an explanation which is based on the existence of non-radiative deexcitations. We present also a mathematical model for calculating this transition effect on the lifetime measurements. We consider that it is possible to take advantage of this experimental lifetime variation to determine a parameter of the model which characterises the non-radiative deexcitations. This measuring method appears to be a simple and original procedure for the study of certain nonradiative transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882736
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  • 15
    Electronic Resource
    Electronic Resource
    On the influence of backscattered electrons on the lateral resolution in scanning auger microscopy (1977)
    Springer
    Applied physics 14 (1977), S. 351-354 
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    ISSN: 1432-0630
    Keywords: 68.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A definition of edge resolution is proposed, which is adapted to the pecularities of scanning Auger microscopy. Based on recent monte-Carlo computer simulations for scanning electron microscopy, the influence of backscattered electrons on the edge resolution is estimated for low-Z (Al) and high-Z materials (Au). The resolution is found to be of the order of 100nm and to be nearly independent of the atomic number of the sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00883438
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  • 16
    Electronic Resource
    Electronic Resource
    Sputtered neutral mass spectrometry (SNMS) as a tool for chemical surface analysis and depth profiling (1977)
    Springer
    Applied physics 14 (1977), S. 43-47 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract An experimental system for mass spectrometry of supttered neutral particles involving a hf plasma operated in Ar at several 10−4 Torr is described. The potentialities of the method for quantitative surface analysis are reasoned. Depth profiling by sputtered neutral mass spectrometry is demonstrated for anodic oxide layers on Nb and Ta.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882632
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  • 17
    Electronic Resource
    Electronic Resource
    Secondary-ion emission of amino acids (1976)
    Springer
    Applied physics 11 (1976), S. 35-39 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 87
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Secondary-ion mass spectroscopy (SIMS) is a hydrogen, isotope and compound sensitive analytical technique of extremely high absolute sensitivity. Continuing earlier measurements for carboxylic acids, adsorbed alcohols etc., we have carried out a systematical investigation of secondary-ion emission from metal-supported amino acids, containing various functional groups (e.g., alanine, phenylalanine, cysteine, arginine). In order to avoid damage effects we applied extremely small primary-ion current densities in the 10−9 A·cm−2 range. The main results of our investigations can be summarized as follows: - All investigated amino acids produce high-intensity secondary-ion parent peaks (M+1)+ and (M−1)−. - In addition positive as well as negative fragment ions representative for the different functional groups are emitted with high yields. - For 2.5 keV Ar+-ions the absolute yields for the parent ions and the most important fragment ions are in the range of 0.1; the damage cross section is 〉10−14 cm2 for all investigated acids. The resulting absolute sensitivities are below 10−6 of one monomolecular layer or 〈10−12 g. We infer from these results that static SIMS is an excellent tool for trace detection, structural investigation and surface reaction studies of amino acids.
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    URL: http://dx.doi.org/10.1007/BF00895013
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  • 18
    Electronic Resource
    Electronic Resource
    Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples (1978)
    Springer
    Applied physics 15 (1978), S. 365-369 
    Details
    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Channeling effect techniques with a 2.0 MeV He+ Rutherford backscattering and transmission electron microscopy were used to characterize the crystallized layers after Q-switched ruby laser irradiation of 4000 Å thick amorphous layer on 〈100〉 and 〈111〉 underlined crystal substrates. At a laser energy density of 2.5 J/cm2 the crystal layer on the 〈111〉 specimen contains a large density of stacking-faults, that on 〈100〉 specimen contains a very small amount of screw dislocation lines. High quality single-crystal layers have been obtained after irradiation at 3.5 J/cm2. From a comparison with the growth rate and defect structure observed in thermally annealed implanted-amorphous layers, we propose that crystal growth by 50 ns pulse laser annealing occurs by melting the amorphous layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886154
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  • 19
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    ESCA studies on changes in surface composition under ion bombardment (1977)
    Springer
    Applied physics 12 (1977), S. 101-112 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The influence of ion bombardment on the composition of surfaces was investigated by means of ESCA. The bombardment of metal oxides with inert gas ions results, not only in sputtering of the surface, but also in reduction of the oxides. The rate of reduction is particularly high when the oxide/metal interface is within the range of the bombarding ions. Ion induced reduction was found in oxide layers, thinner than the escape depth of the photoelectrons, on Mo, W, Nb, Ta, Ti, Zr, Si, and Bi. The relationship between reduction phenomena, on the one hand, and the ion energy, angle of incidence, mass of the gas used for bombardment, and ion current density, on the other hand, was investigated in the case of the Mo/Mo-oxide system. Ion bombardment of surfaces may also result in the formation of new compounds. Two examples of this are the formation of carbides through the bombardment of contaminated surfaces and the ion induced formation of C-F compounds from a mixture of K2SiF6 and carbon.
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    URL: http://dx.doi.org/10.1007/BF00900076
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  • 20
    Electronic Resource
    Electronic Resource
    Energy spectra of light ions backscattered from random solids (1978)
    Springer
    Applied physics 16 (1978), S. 247-253 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A scheme for the calculation of energy spectra of ions backscatterred from random solids is proposed for the energy region where multiple collisions dominate. Calculations are performed for light ion bombardment of heavy targets, which is a case of special interest for the plasma-well interaction in fusion reactors. Examples of spectra obtained for protons incident on a Cu target are presented. A maximum in the spectra is found in accordance with measurements. The position of the maximum seems to vary slowly with the initial ion energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885120
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  • 21
    Electronic Resource
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    Mechanisms for the reflection of light atoms from crystal surfaces at kilovolt energies (1978)
    Springer
    Applied physics 17 (1978), S. 295-301 
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    ISSN: 1432-0630
    Keywords: 68.20 ; 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The computer program MARLOWE was used to investigate the backscattering of protons from the (110) surface of a nickel crystal. Grazing incidence was considered so that anisotropic effects originated mainly from the surface region. The contribution of aligned scattering was studied by comparing the results with similar calculations for an amorphous target. Energy distributions of backscattered particles were investigated for incident energies ranging from 0.1 to 5keV. The structure of these distributions was explained by making calculations for several target thickness. Specular reflection was found to depend on the structure of the first few atomic planes only. The (110) rows in the surface plane were responsible for focusing into surface semichannels. Focusing in these semichannels was found to be the strongest under total reflection conditions (below about 1.3 KeV) while the scattering intensity from surface rows increased with increasing incident energy. The orientation of the plane of incidence was found to have large influence on the relative contributions of the reflection mechanisms involved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886958
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  • 22
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    Characteristic energy loss measurements of slow electrons on clean and adsorbate-covered Ru(001) (1979)
    Springer
    Applied physics 18 (1979), S. 227-233 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 79.60.-i
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Characteristic energy losses of low energy electrons backscattered from Ru(001) have been measured under conditions of very low primary electron currents for the clean and the CO- or oxygen-covered surface. The main losses found for the clean and the CO-covered surface are similar to those observed as XPS core satellites which may mean that the influences of the core hole on the initial and the final states of the valence shake-up are about the same. A peak in the secondary electron spectrum of the clean surface is found at 11 eV which is changed by adsorption. The results are discussed in terms of the excitations of the metal and the adsorbates.
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    URL: http://dx.doi.org/10.1007/BF00885507
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  • 23
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    Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors (1977)
    Springer
    Applied physics 12 (1977), S. 45-53 
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    ISSN: 1432-0630
    Keywords: 06 ; 79.20 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A very sensitive technique is presented which can be applied to determine deep level profiles in space-charge layers of Schottky barriers orpn-junctions. The method uses an extended transient capacitance technique with correlation similar to Lang's DLTS technique. The extension of DLTS to double correlation DDLTS is necessary to resolve the deep level profile and to exclude the field dependence of the capture cross-section and contact effects. By using a double-pulse capacitance transient and correlation, these undesired effects can be subtracted. Profiles can be determined for deep levels at concentrations 104 times lower than the background doping. Results are reported for epitaxial GaAs which showed one major deep level at 0.18 eV below the conduction band. Near the interface to the substrate, a slight shift in energy from 0.18 to 0.19 eV is observed. A second level at 0.43 eV decays into the epi-layer in the form of a diffusion tail.
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    URL: http://dx.doi.org/10.1007/BF00900067
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  • 24
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    Amorphous-polycrystal transition induced by laser pulse in self-ion implanted silicon (1977)
    Springer
    Applied physics 14 (1977), S. 189-191 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Reflection high energy electron diffraction has been used to investigate the amorphous to polycrystalline structure transition in silicon induced by laser pulse. The power density of the ruby laser pulse, in the free generation mode, has been maintained below the threshold to induce surface damage. Depth analysis has been carried out in 〈100〉 silicon crystal using the channeling effect technique.
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    URL: http://dx.doi.org/10.1007/BF00883088
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  • 25
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    The structure of theL 2,3 VV-auger line of silicon and silicon compounds (1977)
    Springer
    Applied physics 14 (1977), S. 283-287 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract TheL 2,3 VV Auger transitions of Si, SiO2, and SiC have been measured and compared with the self-fold electron density of states. The data indicate that Auger matrix effects must be included to explain the structure of the Auger lines. A comparison with soft X-ray measurements of Wiech shows, that the measured Auger line shape is nearly identical with the self-foldK β emission band. The selection rules for X-ray emission lead then to the conclusion that mostlyp-like valence electrons are involved in the Auger transition. This result indicates the relative importance ofs andp states in Auger transitions which is in accordance with theoretical calculations of Feibelman et al.
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    URL: http://dx.doi.org/10.1007/BF00882733
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  • 26
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    AES investigations of Ar+ ion retention in Si during Ar sputtering (1978)
    Springer
    Applied physics 16 (1978), S. 43-46 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 68.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Argon retention in silicon has been studied by AES in the energy range between 1 and 15 keV at bombardment fluences up to ∼1018 ions/cm2. AES data of implanted argon in silicon near the surface region, as obtained during sputtering, can be interpreted qualitatively by a simple model of ion collection. Discrepancies between calculated and measured saturation values of collected argon ions indicate that during implantation at high fluences addition surface effects become important and that the simple model of ion collection has to account for this. Quantitative AES correlated with RBS indicates pronounced concentration gradients of argon in silicon near surface regions.
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    URL: http://dx.doi.org/10.1007/BF00931420
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  • 27
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    Low-energy electron diffraction and auger electron spectroscopy study of the oxidation of Ti {0001} at room temperature (1977)
    Springer
    Applied physics 12 (1977), S. 311-315 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The reaction of a clean Ti (0001) surface with oxygen gas at low pressure and room temperature has been studied with low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES). At low exposures (about 1 Langmuir) ap(2×2) superstructure is observed which gradually converts to 1×1 at high exposures (about 100 Langmuirs). The LEED spectra confirm that the final 1×1 structure is different from that of clean Ti (0001), while the AES spectra indicate that the final oxide is probably TiO, not TiO2. The plausibility of this indication is discussed.
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    URL: http://dx.doi.org/10.1007/BF00886031
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  • 28
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    Some aspects of auger electron spectra of 3d transition metal oxides (1977)
    Springer
    Applied physics 13 (1977), S. 43-46 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 82.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Auger electron spectra of the transition metals Cr, Mn, Fe, Co and Ni as well as their oxides have been investigated in the energy range between 0–100 eV. In each case of the clean metal surface the observed spectrum consists essentially of one Auger line identified asM 2,3 VV transition. After oxidation a line doublet is observed revealing two transitions instead of one. Additional new Auger peaks appear in the low energy range between 0–30 eV. The “splitting” of the Auger line can be explained as resulting from aM 2,3 V dVd and aM 2,3 V pVp transition. The latter is characteristic for the compound and can in a simple way be interpreted as a cross transition.
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    URL: http://dx.doi.org/10.1007/BF00890718
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  • 29
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    On the influence of reactive gases on sputtering and secondary ion emission (1978)
    Springer
    Applied physics 16 (1978), S. 271-278 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu−Ni layers, Δz is essentially constant for erosion depthsz≳800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.
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    URL: http://dx.doi.org/10.1007/BF00885122
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  • 30
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    Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann (1979)
    Springer
    Applied physics 18 (1979), S. 425-426 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The statistics of the sputtering process, which has been used to explain sputterbroadening effect due to surface roughness, has been treated with conditional probabilities. This results in the relationship, $${{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto \sqrt {(1 + \overline \gamma )/z} $$ , instead of $${{\Delta z} \mathord{\left/ {\vphantom {{\Delta z} z}} \right. \kern-\nulldelimiterspace} z} \propto {1 \mathord{\left/ {\vphantom {1 {\sqrt z }}} \right. \kern-\nulldelimiterspace} {\sqrt z }}$$ derived by S. Hofmann [Appl. Phys.9, 59 (1976)], where δz,z, and $$\overline \gamma $$ are the depth resolution, sputtered depth and sputtering yield, respectively.
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    URL: http://dx.doi.org/10.1007/BF00899698
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  • 31
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    High-frequency breakdown and paschen law (1979)
    Springer
    Applied physics 19 (1979), S. 377-381 
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    ISSN: 1432-0630
    Keywords: 52 ; 77.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In the present paper an attempt has been made to draw theoretically a correlation between the well-known Paschen curve and the high-frequency breakdown characteristic of a gas device by interpreting electron mean free path in terms of the frequency of the applied field. The analytical high-frequency breakdown characteristic, so obtained, agree fairly well with the experimental results.
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    URL: http://dx.doi.org/10.1007/BF00930100
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  • 32
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    An RBS technique for measurement of the erosion rate of ion implanted films (1979)
    Springer
    Applied physics 19 (1979), S. 191-194 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The glancing incidence Rutherford backscattering method is used to study the erosion of aluminium films during bombardment by 10 keV Ar+ ions. It is found that the erosion rate of the firm is about one third the value expected and also that the depth profile of previously implanted 80 ke VPb+ ions changes during the erosion.
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    URL: http://dx.doi.org/10.1007/BF00932396
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  • 33
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    Raster scanning depth profiling of layer structures (1977)
    Springer
    Applied physics 12 (1977), S. 149-156 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Implications in the use of the electronic gating scheme in depth profiling studies of layer structures by means of raster scanning secondary ion mass spectrometry are investigated. The profile of the sputtering crater and the intensity variation after break-through are calculated with the scan width and the gate width as parameters. Thick (5.6 μm) magnetic garnet layers grown an a non-magnetic garnet substrate were used for depth profiling measurements. A relative depth resolution of 1% could be obtained. Comparison of experimental results with calculated data shows excellent agreement.
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    URL: http://dx.doi.org/10.1007/BF00896140
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  • 34
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    A method of background determination in quantitative auger spectroscopy (1976)
    Springer
    Applied physics 11 (1976), S. 233-239 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A method for automatically determining a structureless background in a measured line spectrum is presented. The model assumptions for the background are given by the sign of the first three derivatives only, and the whole procedure is based on a smoothing spline algorithm. The method is especially designed for background determination in quantitative Auger spectroscopy, but may be modified to cover other topics. Application to measured Auger spectra is demonstrated and the validity of the method discussed.
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    URL: http://dx.doi.org/10.1007/BF00897058
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  • 35
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    Transmission sputtering yields of gold at 6.8 MeV (1976)
    Springer
    Applied physics 11 (1976), S. 289-293 
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    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The transmission sputtering yield of gold for 6.8-MeV Au– bombardment has been measured on targets of thicknesses from 250 to ∼ 7000 Å. The results are compared to Sigmund's theory and to recent calculations of deposited-energy depth distributions by Winterbon. Good agreement between experimental data and theory is found except for target thicknesses around 4000 Å, where the experimental yield rises by up to a factor two higher than predicted by theory. This discrepancy is interpreted in terms of collision spikes, which have been observed previously in backsputtering experiments.
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    URL: http://dx.doi.org/10.1007/BF00897068
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  • 36
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    Distinction between avalanche and tunneling breakdown in one-sided abrupt junctions (1978)
    Springer
    Applied physics 16 (1978), S. 191-194 
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    ISSN: 1432-0630
    Keywords: 72.20 ; 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF t. It is shown thatF t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm eff + /m o and the semiconductor energy band gapE g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.
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    URL: http://dx.doi.org/10.1007/BF00930386
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  • 37
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    Computer simulation of low-energy sputtering in the binary collision approximation (1979)
    Springer
    Applied physics 18 (1979), S. 381-389 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The sputtering of amorphous Cu targets by low-energy atoms has been investigated in the binary collision approximation using the computer program MARLOWE. Particular attention was given to the influence of the surface binding model on the results. Calculations were made of the dependence of the sputtering yield on the incident particle direction, energy, and mass. Angular-, energy-, and yield-distributions of the ejected atoms were evaluated. Comparisons with experimental results on polycrystalline targets show that the planar surface binding model is to be preferred over the isotropic surface binding model, especially with regard to the angular- and energy-distributions. Calculated yields are in reasonable agreement with experiment at energies below about 1 keV, but deviate at higher energies, apparently because of crystal correlation effects that are neglected in the amorphous model.
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    URL: http://dx.doi.org/10.1007/BF00899692
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  • 38
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    Comment on relative ion sputtering yield measurements by integration of secondary ion energy distribution using a retarding-dispersive ion energy analyzer (1979)
    Springer
    Applied physics 18 (1979), S. 221-222 
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    ISSN: 1432-0630
    Keywords: 79.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The location and width of the peak in the sputtered ion energy distributions of W+ from the clean surface can be explained by a simple power dependence on energy for the ionization probability.
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    URL: http://dx.doi.org/10.1007/BF00934420
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