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  • 1
    Series available for loan
    Series available for loan
    The stratigraphic section in the vicinity of Eureka, Nevada (1956)
    Washington, DC : United States Gov. Print. Off.
    Associated volumes
    Details Availability
    Call number: SR 90.0002(276)
    In: Professional paper
    Type of Medium: Series available for loan
    Pages: III, 77 S. + 2 pl.
    Series Statement: U.S. Geological Survey professional paper 276
    Language: English
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Lattice location of lead implanted into silicon at room temperature (1977)
    Springer
    Applied physics 13 (1977), S. 391-393 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Rutherford backscattering has been used to measure the lattice positions occupied by Pb following room temperature implantation into silicon. The data provide information on the size and deposition of amorphous zones in relation to the distribution of implanted Pb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882616
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  • 3
    Electronic Resource
    Electronic Resource
    High-temperature phase transformations of iron anhydrous ammonia system realized by ball milling at room temperature (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3956-3962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: α-Fe powder has been ball milled at room temperature in an anhydrous ammonia atmosphere for various times. The composition and structure of milled powders was investigated using x-ray diffraction spectroscopy, Mössbauer spectroscopy, combustion elemental analysis, and thermal analysis. A high temperature reaction sequence was observed during milling in the nitrogen composition range from 3.75 to 5.56 wt %. The nitriding reaction sequence has been established as a function of milling time. An increase of nitrogen in the powder with an increase of milling time produces a progression to iron nitride phases richer in nitrogen. A distinct similarity is found between nitriding reaction processes during high-energy ball milling and nitrogen ion implantation into iron. Additionally, an inverse (dissociation) reaction sequence is observed during thermal treatments of ball-milled iron powders. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361822
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  • 4
    Electronic Resource
    Electronic Resource
    Surface morphological structures in ultra-high-dose self-implanted silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1811-1813 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, we report the observation of intriguing, implantation-induced surface morphological structures in Si. Experimental evidence indicates that an extremely rough surface can occur when ultra-high-dose (∼1018 cm−2) self-implantation is performed on a partially preamorphized Si wafer within a temperature range from 175 to 250 °C. However, the same implantation into crystalline or completely amorphized Si does not produce such surface structures. Characteristics of the structures and their temperature dependence suggest a possible mechanism for their evolution. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122290
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  • 5
    Electronic Resource
    Electronic Resource
    Electrically active subthreshold damage in Si ion implanted with Si, Ge, and Sn (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2208-2210 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The residual damage in Si after Si, Ge, and Sn implantation and annealing at elevated temperatures has been studied with capacitance-voltage measurements and deep level transient spectroscopy. We present a critical dose, specific to the implanted species and energy, below which no electrically active defects are found within our detection limit (2×10−5 of the background doping). This critical dose is found to scale with the number of beam-induced vacancies and is in remarkable agreement with the critical dose established previously for observation of structural defects (dislocation loops) with transmission electron microscopy. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112763
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  • 6
    Electronic Resource
    Electronic Resource
    The formation of ternary compound Fe3Mo3C by ball milling (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4118-4122 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ball milling of Mo in nitrogen and ammonia gases has been studied. After heating, the formation of an intriguing ternary compound, Fe3Mo3C1−x, was observed as a result of Fe (and C) contamination from the milling apparatus. For a comparison, mechanical alloying of Fe–Mo–C powders with a stoichiometric composition of Fe3Mo3C was also performed and again an Fe–Mo–C alloy was obtained after milling. Thermal analysis shows a single transition peak for the formation of both the Fe3Mo3C phase in the latter case and also for Fe3Mo3C1−x formed as a result of contamination from the mill. The lattice parameter for the Fe3Mo3C1−x phase obtained by Mo-gas reaction is smaller than for the Fe3Mo3C phase obtained by mechanical alloying of stoichiometric Fe–Mo–C powders. It is suggested that, in the Fe3Mo3C1−x phase produced by milling of Mo in gases, a high concentration of C vacancies exists. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360705
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  • 7
    Electronic Resource
    Electronic Resource
    Oxidation of silicon by low energy oxygen bombardment (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1840-1846 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High resolution Rutherford backscattering and channeling has been used to study the formation of surface oxides during room temperature bombardment of silicon with oxygen in a secondary ion mass spectrometry system. Stoichiometric SiO2 is formed at angles of incidence (to the surface normal)≤25° and the angular dependence is adequately modeled using the profile code. A linear dependence of oxide thickness on energy is obtained in the energy range 3–40 keV (per oxygen ion) and this is consistent with trim code calculations. The suboxide damage has also been measured and studied during annealing. Our data are consistent with a simple model of oxygen build up and formation of strong Si–O bonds during room temperature bombardment. Once a buried SiO2 layer is reached and Si bonds are saturated, oxygen can migrate in SiO2 to extend the oxide towards the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357704
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  • 8
    Electronic Resource
    Electronic Resource
    Phase transitions and epitaxial Ni3Si formation on Ni(100) after high dose silicon ion implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4792-4794 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural changes and phase transitions during high dose Si implantation into single crystal Ni(100) and subsequent annealing at temperatures up to 800 °C have been characterized using Rutherford backscattering spectrometry and channeling. A complete amorphous layer is produced after implantation to doses above about 4.5×1017 Si/cm2. The recrystallization of the amorphous layer during isochronal annealing leads to the formation of various Ni-rich silicides at different temperatures. Ion channeling suggests that an epitaxial Ni3Si layer on the Ni(100) substrate can form at a temperature of 400 °C. Further annealing at higher temperatures up to 600 °C improves the epitaxial quality, as indicated by a channeling minimum yield χmin of 8% in the Ni3Si layer. Higher temperature annealing at 700 °C and above results in the dissolution of the Ni3Si layer into the Ni substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354353
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  • 9
    Electronic Resource
    Electronic Resource
    Ion damage buildup and amorphization processes in AlxGa1−xAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 87-94 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nature of keV ion damage buildup and amorphization in AlxGa1−xAs at liquid-nitrogen temperature is investigated for various Al compositions using Rutherford backscattering channeling, transmission electron microscopy, and in situ time-resolved-reflectivity techniques. Two distinct damage buildup processes are observed in AlxGa1−xAs depending on Al content. At low Al content, the behavior is similar to GaAs whereby collisional disorder is "frozen in'' and amorphization proceeds with increasing dose via the overlap of damage cascades and small amorphous zones created by individual ion tracks. However, some dynamic annealing occurs during implantation in AlGaAs and this effect is accentuated with increasing Al content. For high Al content, crystallinity is retained at moderate ion damage with disorder building up in the form of stacking faults, planar, and other extended defects. In the latter case, amorphization is nucleation limited and proceeds abruptly when the level of crystalline disorder exceeds a critical level. The amorphization threshold dose increases with increasing Al composition by over two orders of magnitude from GaAs to AlAs. Dynamic annealing and damage creation processes during implantation compete very strongly in AlxGa1−xAs even at liquid-nitrogen temperatures. This behavior is discussed in terms of both the availability of very fast mobile defects and bonding configurational changes related to the Al sublattice in AlxGa1−xAs of high Al content. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359358
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  • 10
    Electronic Resource
    Electronic Resource
    The oldest fungicide and newest phytoalexin – a reappraisal of the fungitoxicity of elemental sulphur (2004)
    Oxford, UK : Blackwell Science Ltd
    Plant pathology 53 (2004), S. 0 
    Details
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Elemental sulphur (S0) is man's oldest fungicide. In biological systems it is formed by certain specialized prokaryotes but the element has rarely been found in eukaryotes. The recent discovery that certain plant species from diverse families produce S0 as a localized component of active defence to vascular pathogens, and that S0 is constitutive in some crucifers, led to this review. Because of the age and relative inaccessibility of some of the past literature and the inconsistency in the methods used, the spectrum of activity and the toxicity of S0 are reassessed here. Interpretation of bioassays of this and other hydrophobic compounds are offered. Also, brief coverage is given to the history of S0 use and its suggested mode(s) of action. The element's possible role in defence and the form, location and levels in planta are considered. Sulphur is one of many S-containing defence-related compounds and it is ironic that sulphur deficiency has recently become a widespread nutrient disorder in crops, largely due to restrictions on fossil fuel burning. The problem is being addressed by sulphur application, but the future manipulation of genes for sulphate uptake and sulphur biosynthesis are likely goals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.0032-0862.2004.01010.x
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