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  • 1
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    UCL Press
    Publication Date: 2024-03-24
    Description: The Origins of Self explores the role that selfhood plays in defining human society, and each human individual in that society. It considers the genetic and cultural origins of self, the role that self plays in socialisation and language, and the types of self we generate in our individual journeys to and through adulthood. Edwardes argues that other awareness is a relatively early evolutionary development, present throughout the primate clade and perhaps beyond, but self-awareness is a product of the sharing of social models, something only humans appear to do. The self of which we are aware is not something innate within us, it is a model of our self produced as a response to the models of us offered to us by other people. Edwardes proposes that human construction of selfhood involves seven different types of self. All but one of them are internally generated models, and the only non-model, the actual self, is completely hidden from conscious awareness. We rely on others to tell us about our self, and even to let us know we are a self.
    Keywords: Self ; Selfhood ; Anthropology ; Psychology ; Linguistics ; Evolution ; anthropology ; philosophy ; thema EDItEUR::C Language and Linguistics::CF Linguistics::CFA Philosophy of language ; thema EDItEUR::C Language and Linguistics::CF Linguistics::CFD Psycholinguistics and cognitive linguistics ; thema EDItEUR::J Society and Social Sciences::JH Sociology and anthropology ; thema EDItEUR::J Society and Social Sciences::JM Psychology::JMR Cognition and cognitive psychology ; thema EDItEUR::J Society and Social Sciences::JM Psychology::JMS Psychology: the self, ego, identity, personality ; thema EDItEUR::P Mathematics and Science::PS Biology, life sciences::PSA Life sciences: general issues
    Language: English
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  • 2
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 165 (1950), S. 694-694 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Phillips and Rottsieper2 patented a process for making moulding compositions from materials rich in tannins such as mimosa bark, mangrove bark and quebracho wood. They caused the tannins to react in situ with paraformaldehyde or hexamine at a pressure of 2 tons per sq. in. and a temperature of ...
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 196 (1962), S. 382-383 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Fig. 1. Displacement of log dose-response curve of oxytocin by thioglycollate. Rat uterus in de Jalon solution at 30 Fig. 2. Rate of destruction of oxytocin when incubated with 20 mM thioglycollate at 20 and pH 7.6 Fig. 1 shows the antagonism of oxytocin by neutralized thioglycollate on the rat ...
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3980-3986 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films containing boron and nitrogen were prepared by electron-beam evaporation of boron and bombardment of the growing film with nitrogen ions of energy up to 1500 eV. Hard films of high transparency (extinction coefficient 〈0.01) were prepared with nitrogen-to-boron atomic arrival ratios greater than one. The optical constants in the visible part of the spectrum were determined as a function of B-to-N atomic ratio in the film and substrate temperature using optical photometry. Measurements of the optical constants were extended to 40 eV using a Kramers–Kronig analysis of electron-energy-loss spectra. Boron-to-nitrogen atomic arrival rates were determined and show that as ion energy and substrate temperature are increased ion flux must be increased to achieve the same stoichiometry. Film structure was imaged using high-resolution electron microscopy, and the radial distribution function (RDF) was determined. The RDF of stoichiometric films showed that high substrate temperatures increased the size of the ordered regions. The RDF and high-resolution imaging of all films were consistent with the presence of the hexagonal form of BN with substoichiometric films containing amorphous boron as the other constituent. This conclusion is consistent with the analysis derived from the sum rule obtained from the optical constants. No evidence could be found for the cubic form of BN.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1805-1809 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mixed thin films of TiO2 and SiO2 were produced by coevaporation from separate electron-beam sources and simultaneous bombardment of the growing film with oxygen ions. The optical properties of the films were determined during growth by in situ ellipsometry and the surface composition of the deposited films studied by in situ ion scattering spectroscopy, ex situ x-ray photoelectron spectroscopy, and energy filtered electron diffraction. The correlation between the optical and surface characterization is presented. There is evidence of local variations in the relative concentrations of TiO2 and SiO2. The position of the Si 2p binding energy depends on the TiO2 content in the film, indicating the possible formation of an intimate mixture.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 505-512 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Investigations of cathode spot behavior on a titanium cathode in the presence of a variable magnetic field are presented. The cathode spot velocity as a function of magnetic field strength, arc current, and gas pressure has been determined using an optical technique, and the results have been compared with a number of available theories. The cathode spots have been investigated using a magnetic probe coil, and using both high-speed and conventional photography. The observations show that the motion of the spots is consistent with the presence of a positive space charge at the spot.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile ultrahigh-vacuum thin-film deposition and analysis system is described. Films are deposited by electron beam evaporation with the possibility of ion beam bombardment of the growing film. Measurements of the reflectance and/or transmittance of the coating surface can be made simultaneously at 16 wavelengths across the visible or infrared spectrum. Ellipsometric measurements can also be made in situ, at a single wavelength and single angle of incidence, by an ellipsometer which can operate in either an automatic rotating analyzer mode or a manual nulling mode. The system is also equipped with an ion gun producing a submillimeter spot, and with a hemispherical sector, ion energy analyzer for ion scattering spectroscopy studies of the film surface. Results obtained during the deposition of a gold film are presented to demonstrate the capability of the system.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 760-769 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some aspects of the dynamics of thin-film synthesis of aluminum nitride and aluminum oxide produced by ion-assisted deposition have been deduced from in situ measurements by ellipsometry, photometry, and ion scattering spectroscopy. Measurements obtained during the etching of aluminum films by nitrogen and oxygen ion beams have established the thickness of the synthesized layer and the rate of compound formation. Some of these measurements have been compared with a theoretical model which predicts the time evolution of the synthesized surface layer as well as the steady-state layer thickness. The breakdown voltage and variation of capacitance with applied voltage of aluminum oxide films prepared by ion-assisted deposition are also presented. Furthermore, the optical properties of ion-assisted AlN and Al2O3 in the visible region are given.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2658-2664 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of surface morphologies of films prepared by ion-based deposition techniques has been investigated by atomic force microscopy. Two deposition processes, filtered arc deposition (FAD) and ion-beam-assisted deposition, where low-energy (〈100 eV) ion irradiation and high-energy (several tens of keV) ion-beam bombardment concurrent with film growth were involved, respectively, have been employed to prepare TiN and Al films. Comparative studies on the effect of energetic ions on the development of topography have been performed between the low-ion-energy regime and high-ion-energy regime. In addition, the relationship between topography and mechanical properties of thin films has been revealed, by involving thin films prepared by thermal evaporation deposition (TED), where almost all depositing particles are neutral. In the images of the TED TiN and Al films, a large number of porous and deep boundaries between columnar grains was observed, suggesting a very rough and loose surface. In contrast, the FAD films exhibited much denser surface morphologies, although still columnar. The root-mean-square roughness of the FAD films was less than 1 A(ring). Hardness test and optical parameter measurement indicated that the FAD films were much harder and, in the case of optical films, much more transparent than the TED films, which was considered to arise from the denser surface morphologies rather than crystallization of the films. The high density and super smoothness of the FAD films, and the resultant mechanical and optical properties superior to those of the TED films, were attributed to the enhancement of surface migration of the deposited adatoms in the FAD process, which could provide intensive low-energy ion irradiation during film growth. As for topography modification by high-energy ion-beam bombardment concurrent with film growth, in addition to the increase of surface diffusion due to elastic collision and thermal spikes, physical sputtering must be considered while explaining the development of the film topography. Both surface migration enhancement and sputtering played important roles in the case of high-energy heavy-ion-beam bombardment, under which condition surface morphology characterized by dense columns with larger dimension and deep clean boundaries was formed. However, under high-energy light-ion-beam bombardment, the sputtering was dominant, and the variation of sputtering coefficient with position on the surface of growing film led to the formation of cones. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2497-2499 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An in situ stress measuring interferometer and in situ ellipsometer have been used to study the stress evolution and optical properties of MgF2 and SiOx optical thin films prepared by electron beam evaporation and 100 eV O+2 ion-assisted deposition (IAD). The maximum stress observed in thermal evaporation of MgF2 was found to be 240 MPa. The tensile stress in evaporated MgF2 could be modified by IAD to compressive stress. The optical properties and stress of SiOx were modified by IAD and also by the presence of a partial pressure of oxygen. The combination of stress interferometry and ellipsometry is shown to be a powerful method of monitoring and controlling the properties of optical materials deposited by IAD.
    Type of Medium: Electronic Resource
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