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  • 1
    Electronic Resource
    Electronic Resource
    Properties of ZrN x prepared by ion-assisted deposition (1990)
    Springer
    Journal of materials science 9 (1990), S. 972-974 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00722192
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-based methods for optical thin film deposition (1986)
    Springer
    Journal of materials science 21 (1986), S. 1-25 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The optical properties of the dielectric oxide films SiO2, Al2O3, TiO2, ZrO2, CeO2 and Ta2O5 produced by ion-based techniques have been reviewed. The influence of ion bombardment during deposition is discussed in some detail and the various production techniques are described. Recent results on the deposition and properties of diamond-like carbon films are also reviewed. Finally, some examples of the practical applications of high quality dielectric oxide films are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01144693
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  • 3
    Electronic Resource
    Electronic Resource
    Microstructure of zi rcon is films deposited with ion assistance (1987)
    Springer
    Journal of materials science 22 (1987), S. 3725-3731 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Zirconia films were deposited in vacuum from an electron-beam hearth with simultaneous ion bombardment from a Kaufman source. The effects of argon, oxygen and nitrogen ions were investigated, together with those of temperature and substrate type. For amorphous substrates, without ions, X-ray and electron diffraction showed that amorphous films were produced at room temperature. Deposition on to 300°C amorphous substrates produced the monoclinic form. Ion assistance converted the structure to cubic. It was found that deposition on to KCI (100) substrates also produced the cubic form at elevated temperatures, with or without ions. High-resolution microscopy showed that these films were crystallographically oriented with either 〈100〉 or 〈110〉 normal to the KCI substrate. The Raman spectra of films on fused silica substrates were correlated with the X-ray diffraction scans and the conditions under which the Raman spectrum could be used as a reliable indicator of microstructure were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01161485
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  • 4
    Electronic Resource
    Electronic Resource
    Preliminary study of synergism of acid rain and diflubenzuron (1995)
    Springer
    Bulletin of environmental contamination and toxicology 54 (1995), S. 833-836 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00197966
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  • 5
    Electronic Resource
    Electronic Resource
    Outer shell excitations of He and Ne using projectiles of C+, N+, O+, F+,20Ne+,22Ne+, Na+ and Mg+ (1972)
    Springer
    The European physical journal 255 (1972), S. 1-13 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract He and Ne have been bombarded with singly charged ions of elements from carbon to magnesium, in the energy range 10–75 keV, and photons emitted from the target atoms have been detected. The results are discussed in terms of molecular orbital level correlation diagrams in which account has been taken of conservation of the total electronic spin. Comparisons are drawn with inner shell excitations and electronic stopping power measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01391667
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  • 6
    Electronic Resource
    Electronic Resource
    Application of atom-photon coincidence techniques to the determination of the differential cross section for excitation ofK(42 P) in low-energy K-N2, CO collisions (1979)
    Springer
    The European physical journal 289 (1979), S. 373-381 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The differential cross section for the processK(42 S)+N2, CO→K(42 P)+ N2, CO is presented for reduced scattering angles τ〈2·104 eV deg. The inelastic process is identified by determining the time-correlation between the inelastically scattered potassium atom and the emittedK(42 P→42 S)photon. The performance of different coincidence techniques is compared. From the differential cross sections values for the position of the curve crossing responsible for the excitation process are derived (R c=2.77, 2.48 Å andV(R c )=0.55, 1.00 eV for K-N2, CO respectively). The values indicate that the lowest ionic intermediate state of the form K+-N 2 − , CO− is responsible for the excitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01409388
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  • 7
    Electronic Resource
    Electronic Resource
    On the influence of reactive gases on sputtering and secondary ion emission (1978)
    Springer
    Applied physics 16 (1978), S. 271-278 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract As a continuation of earlier sputtering yield measurements in an ion microprobe, the influence of oxygen and nitrogen on sputtering yield, ionisation efficiency and depth resolutions has been studied. For inert gas bombardment the yield of Ti and V falls sharply at a certain oxygen exposure. While this decrease in yield can be correlated with an increase in surface binding energy in the case of titanium, cone formation causes the yield to drop for oxygen exposed vanadium. In contrast, during nitrogen bombardment the only effect of oxygen exposure is a drastic increase of the ionisation efficiency; the sputtering yield or the depth resolution Δz/z is hardly influenced by oxygen coverage. As was observed earlier in the case of Cu−Ni layers, Δz is essentially constant for erosion depthsz≳800 Å, thus yielding better resolution at large depths than is to beexpected from a sequential layer removal model. The extent of the transition zone Δz, is determined by surface topography and thus depends on the target composition as well as its structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885122
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  • 8
    Electronic Resource
    Electronic Resource
    Coincidence studies with polarisation analysis of the photon emission induced inK-inert gas collisions (1979)
    Springer
    The European physical journal 292 (1979), S. 235-241 
    Details
    ISSN: 1434-601X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The linear and circular polarisations of theK(42 P→42 S) transition detected in delayed coincidence with the inelastically scattered potassium atom are presented forK- He, Ne, Ar, Kr and Xe. For all systems the Stokes vector measurements have been performed as a function of the potassium scattering angle at a beam energy of 103 eV. The coherence properties of the excitation process are studied with the help of the measured degree of polarisation. For He, Ne and Xe the excitation amplitudes (e.g. the parametersλ andχ) are deduced from the measured Stokes vector. For Ar and Kr the collisionally excited state is not a pure state, and it is concluded that both single excitation of theK atom and simultaneous excitation of both collision partners contribute toK(42 P) excitation. The results are compared with the predictions of the semiclassical treatment of the excitation process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01547467
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  • 9
    Electronic Resource
    Electronic Resource
    High energy xenon ion beam assisted deposition of TiN film and its industrial application (1996)
    Springer
    Journal of materials science 31 (1996), S. 363-369 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract TiN films have been synthesized by ion beam assisted deposition employing xenon ions with an energy of 40 keV. The formed TiN films were investigated systematically in respect of surface morphology, composition, structure and mechanical properties. Then, they were applied to surface protection of scoring dies. Atomic force microscopy and interferometric observation showed that the TiN film is relatively smooth. Rutherford backscattering spectroscopy analysis indicated that few xenon atoms are retained in the film. It was found by transmission electron microscopy and X-ray diffraction experiments that the formed TiN is a nanocrystal (〈 10 nm) film and exhibits slightly (200) preferred orientation. An ultra low load microhardness indentor system was used to examine the plastic property of the film and a hardness of 2300 kgf mm−2 was calculated from the measured data. Scratch tests showed that the adhesion of TiN film deposited by ion beam assisted deposition at ambient temperature is superior to that of high temperature physical vapour deposited (PVD) TiN film. Both a pin-on-dick tribotest and SRV wear test revealed that the wear resistance of the specimen can be greatly improved by TiN coating. A five times increase of service life of different scoring dies could be obtained by protection of TiN coating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01139153
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  • 10
    Electronic Resource
    Electronic Resource
    Dependence of magnetic domain structure on grain orientation in 3.2% silicon-iron with the (110) [0 0 1] texture (1975)
    Springer
    Journal of materials science 10 (1975), S. 1788-1792 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A series of ferromagnetic domain structures in individual grains of (110) [001] textured 3.2% silicon-iron has been observed and measured together with the orientation of the grain. It has been shown that the domain dimensions are inversely proportional to the angle of misorientation of the (110) plane from the grain surface. This is in very good agreement with the theory given by špaček [1, 2]. The lozenge domain structure has also been investigated as a function of grain orientation and the measurements are in excellent agreement with the theory proposed by Goodenough [5].
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00554941
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