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  • 1
    Electronic Resource
    Electronic Resource
    The structure and properties of ion-beam-synthesized boron nitride films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3980-3986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films containing boron and nitrogen were prepared by electron-beam evaporation of boron and bombardment of the growing film with nitrogen ions of energy up to 1500 eV. Hard films of high transparency (extinction coefficient 〈0.01) were prepared with nitrogen-to-boron atomic arrival ratios greater than one. The optical constants in the visible part of the spectrum were determined as a function of B-to-N atomic ratio in the film and substrate temperature using optical photometry. Measurements of the optical constants were extended to 40 eV using a Kramers–Kronig analysis of electron-energy-loss spectra. Boron-to-nitrogen atomic arrival rates were determined and show that as ion energy and substrate temperature are increased ion flux must be increased to achieve the same stoichiometry. Film structure was imaged using high-resolution electron microscopy, and the radial distribution function (RDF) was determined. The RDF of stoichiometric films showed that high substrate temperatures increased the size of the ordered regions. The RDF and high-resolution imaging of all films were consistent with the presence of the hexagonal form of BN with substoichiometric films containing amorphous boron as the other constituent. This conclusion is consistent with the analysis derived from the sum rule obtained from the optical constants. No evidence could be found for the cubic form of BN.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341357
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  • 2
    Electronic Resource
    Electronic Resource
    Ion-assisted deposition of mixed TiO2-SiO2 films (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1805-1809 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mixed thin films of TiO2 and SiO2 were produced by coevaporation from separate electron-beam sources and simultaneous bombardment of the growing film with oxygen ions. The optical properties of the films were determined during growth by in situ ellipsometry and the surface composition of the deposited films studied by in situ ion scattering spectroscopy, ex situ x-ray photoelectron spectroscopy, and energy filtered electron diffraction. The correlation between the optical and surface characterization is presented. There is evidence of local variations in the relative concentrations of TiO2 and SiO2. The position of the Si 2p binding energy depends on the TiO2 content in the film, indicating the possible formation of an intimate mixture.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344352
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  • 3
    Electronic Resource
    Electronic Resource
    Cathode spot phenomena in titanium vacuum arcs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 505-512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Investigations of cathode spot behavior on a titanium cathode in the presence of a variable magnetic field are presented. The cathode spot velocity as a function of magnetic field strength, arc current, and gas pressure has been determined using an optical technique, and the results have been compared with a number of available theories. The cathode spots have been investigated using a magnetic probe coil, and using both high-speed and conventional photography. The observations show that the motion of the spots is consistent with the presence of a positive space charge at the spot.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343566
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of growing thin films by in situ ellipsometry, spectral reflectance and transmittance measurements, and ion-scattering spectroscopy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 1995-2003 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A versatile ultrahigh-vacuum thin-film deposition and analysis system is described. Films are deposited by electron beam evaporation with the possibility of ion beam bombardment of the growing film. Measurements of the reflectance and/or transmittance of the coating surface can be made simultaneously at 16 wavelengths across the visible or infrared spectrum. Ellipsometric measurements can also be made in situ, at a single wavelength and single angle of incidence, by an ellipsometer which can operate in either an automatic rotating analyzer mode or a manual nulling mode. The system is also equipped with an ion gun producing a submillimeter spot, and with a hemispherical sector, ion energy analyzer for ion scattering spectroscopy studies of the film surface. Results obtained during the deposition of a gold film are presented to demonstrate the capability of the system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138408
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  • 5
    Electronic Resource
    Electronic Resource
    Growth dynamics of aluminum nitride and aluminum oxide thin films synthesized by ion-assisted deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 760-769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Some aspects of the dynamics of thin-film synthesis of aluminum nitride and aluminum oxide produced by ion-assisted deposition have been deduced from in situ measurements by ellipsometry, photometry, and ion scattering spectroscopy. Measurements obtained during the etching of aluminum films by nitrogen and oxygen ion beams have established the thickness of the synthesized layer and the rate of compound formation. Some of these measurements have been compared with a theoretical model which predicts the time evolution of the synthesized surface layer as well as the steady-state layer thickness. The breakdown voltage and variation of capacitance with applied voltage of aluminum oxide films prepared by ion-assisted deposition are also presented. Furthermore, the optical properties of ion-assisted AlN and Al2O3 in the visible region are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340068
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  • 6
    Electronic Resource
    Electronic Resource
    Ion-based methods for optical thin film deposition (1986)
    Springer
    Journal of materials science 21 (1986), S. 1-25 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The optical properties of the dielectric oxide films SiO2, Al2O3, TiO2, ZrO2, CeO2 and Ta2O5 produced by ion-based techniques have been reviewed. The influence of ion bombardment during deposition is discussed in some detail and the various production techniques are described. Recent results on the deposition and properties of diamond-like carbon films are also reviewed. Finally, some examples of the practical applications of high quality dielectric oxide films are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01144693
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure of zi rcon is films deposited with ion assistance (1987)
    Springer
    Journal of materials science 22 (1987), S. 3725-3731 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Zirconia films were deposited in vacuum from an electron-beam hearth with simultaneous ion bombardment from a Kaufman source. The effects of argon, oxygen and nitrogen ions were investigated, together with those of temperature and substrate type. For amorphous substrates, without ions, X-ray and electron diffraction showed that amorphous films were produced at room temperature. Deposition on to 300°C amorphous substrates produced the monoclinic form. Ion assistance converted the structure to cubic. It was found that deposition on to KCI (100) substrates also produced the cubic form at elevated temperatures, with or without ions. High-resolution microscopy showed that these films were crystallographically oriented with either 〈100〉 or 〈110〉 normal to the KCI substrate. The Raman spectra of films on fused silica substrates were correlated with the X-ray diffraction scans and the conditions under which the Raman spectrum could be used as a reliable indicator of microstructure were found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01161485
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  • 8
    Electronic Resource
    Electronic Resource
    Structure and hardness of diamond-like carbon films prepared by arc evaporation (1988)
    Springer
    Journal of materials science 7 (1988), S. 410-412 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01730760
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  • 9
    Electronic Resource
    Electronic Resource
    Ion scattering spectroscopy studies of zirconium dioxide thin films prepared in situ (1987)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 10 (1987), S. 13-16 
    Details
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Low energy ISS has been used to investigate, in situ, thin films of zirconium dioxide deposited by evaporation and ion-assisted deposition. It is shown that when a film is deposited to an average thickness of 0.3 nm ± 0.03, as measured by in situ ellipsometry, complete coverage of the substrate occurs. Ion-assisted films have detectably higher Zr surface concentrations and reduced low-energy sputter peaks. Inelastic tailing effects in the Zr scattering peak for 2 keV 4He+ are found to come from particles scattered from approximately the first 7 nm of the oxide surface. The influence of primary ion energy on the Zr/O ratio is also examined.
    Additional Material: 7 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/sia.740100104
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  • 10
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    Ion-based methods for optical thin film deposition (1986)
    Springer
    Details
    Publication Date: 1986-01-01
    Print ISSN: 0022-2461
    Electronic ISSN: 1573-4803
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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